DE3672880D1 - Mit sio2-x ueberzogene gegenstaende durch plasmachemische abscheidung aus der dampfphase und verfahren zur herstellung solcher ueberzuege durch plasmachemische abscheidung aus der dampfphase. - Google Patents

Mit sio2-x ueberzogene gegenstaende durch plasmachemische abscheidung aus der dampfphase und verfahren zur herstellung solcher ueberzuege durch plasmachemische abscheidung aus der dampfphase.

Info

Publication number
DE3672880D1
DE3672880D1 DE8686105164T DE3672880T DE3672880D1 DE 3672880 D1 DE3672880 D1 DE 3672880D1 DE 8686105164 T DE8686105164 T DE 8686105164T DE 3672880 T DE3672880 T DE 3672880T DE 3672880 D1 DE3672880 D1 DE 3672880D1
Authority
DE
Germany
Prior art keywords
steam phase
plasma
deposition
sio2
coatings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686105164T
Other languages
English (en)
Inventor
Purnachandra Pai
Benjamin S Chao
Keith Laverne Hart
Yasuo Stanford Universi Takagi
Russ C Custer
Tomomi Murata
Satoshi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ovonic Synthetic Materials Co Inc
Original Assignee
Ovonic Synthetic Materials Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ovonic Synthetic Materials Co Inc filed Critical Ovonic Synthetic Materials Co Inc
Application granted granted Critical
Publication of DE3672880D1 publication Critical patent/DE3672880D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
DE8686105164T 1985-04-25 1986-04-15 Mit sio2-x ueberzogene gegenstaende durch plasmachemische abscheidung aus der dampfphase und verfahren zur herstellung solcher ueberzuege durch plasmachemische abscheidung aus der dampfphase. Expired - Fee Related DE3672880D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/727,314 US4759993A (en) 1985-04-25 1985-04-25 Plasma chemical vapor deposition SiO2-x coated articles and plasma assisted chemical vapor deposition method of applying the coating

Publications (1)

Publication Number Publication Date
DE3672880D1 true DE3672880D1 (de) 1990-08-30

Family

ID=24922178

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686105164T Expired - Fee Related DE3672880D1 (de) 1985-04-25 1986-04-15 Mit sio2-x ueberzogene gegenstaende durch plasmachemische abscheidung aus der dampfphase und verfahren zur herstellung solcher ueberzuege durch plasmachemische abscheidung aus der dampfphase.

Country Status (6)

Country Link
US (1) US4759993A (de)
EP (1) EP0200086B1 (de)
JP (1) JPS61291976A (de)
KR (1) KR930001520B1 (de)
CA (1) CA1242616A (de)
DE (1) DE3672880D1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4737379A (en) * 1982-09-24 1988-04-12 Energy Conversion Devices, Inc. Plasma deposited coatings, and low temperature plasma method of making same
JPS6372868A (ja) * 1986-09-16 1988-04-02 Nippon Steel Corp 耐食性、耐候性に優れた外装用建材
JPS6376861A (ja) * 1986-09-19 1988-04-07 Nippon Steel Corp 燃焼器具用ステンレス鋼およびその製造法
ZA884511B (en) * 1987-07-15 1989-03-29 Boc Group Inc Method of plasma enhanced silicon oxide deposition
DE3923390A1 (de) * 1988-07-14 1990-01-25 Canon Kk Vorrichtung zur bildung eines grossflaechigen aufgedampften films unter verwendung von wenigstens zwei getrennt gebildeten aktivierten gasen
US5139869A (en) * 1988-09-01 1992-08-18 Wolfgang Euen Thin dielectric layer on a substrate
US5098865A (en) * 1989-11-02 1992-03-24 Machado Jose R High step coverage silicon oxide thin films
EP0731982B1 (de) 1992-07-04 1999-12-01 Trikon Equipments Limited Behandlungsverfahren für eine halbleiterscheibe.
US5858880A (en) * 1994-05-14 1999-01-12 Trikon Equipment Limited Method of treating a semi-conductor wafer
US6077567A (en) * 1997-08-15 2000-06-20 University Of Cincinnati Method of making silica coated steel substrates
JP2000164228A (ja) * 1998-11-25 2000-06-16 Toshiba Corp 固体高分子電解質型燃料電池のセパレータおよびその製造方法
JP4651072B2 (ja) * 2001-05-31 2011-03-16 キヤノン株式会社 堆積膜形成方法、および堆積膜形成装置
JP3877692B2 (ja) * 2003-03-28 2007-02-07 三洋電機株式会社 有機エレクトロルミネッセンス素子およびその製造方法
JP4312063B2 (ja) * 2004-01-21 2009-08-12 日本エー・エス・エム株式会社 薄膜製造装置及びその方法
US20080050608A1 (en) * 2006-08-25 2008-02-28 Mcfaul Surry D Metal coating process and product
ITMI20080773A1 (it) * 2008-04-24 2009-10-25 Moma S R L Dispositivo per applicazioni termoidrauliche con migliorate proprieta anticalcare e relativo metodo di ottenimento
US8258511B2 (en) * 2008-07-02 2012-09-04 Applied Materials, Inc. Thin film transistors using multiple active channel layers
US8268067B2 (en) 2009-10-06 2012-09-18 3M Innovative Properties Company Perfluoropolyether coating composition for hard surfaces
DE102010063887B4 (de) * 2010-12-22 2012-07-19 BSH Bosch und Siemens Hausgeräte GmbH Verfahren zum Herstellen eines pyrolysetauglichen Bauteils eines Gargeräts sowie pyrolysetaugliches Bauteil für ein Gargerät
DE102015101312A1 (de) * 2015-01-29 2016-08-04 Thyssenkrupp Steel Europe Ag Verfahren zum Aufbringen eines metallischen Schutzüberzugs auf eine Oberfläche eines Stahlprodukts

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1463053A (en) * 1972-11-23 1977-02-02 Central Electr Generat Board Application of protective coatings to metal surfaces
GB1483144A (en) * 1975-04-07 1977-08-17 British Petroleum Co Protective films
US4328646A (en) * 1978-11-27 1982-05-11 Rca Corporation Method for preparing an abrasive coating
US4410558A (en) * 1980-05-19 1983-10-18 Energy Conversion Devices, Inc. Continuous amorphous solar cell production system
JPS5747711A (en) * 1980-08-08 1982-03-18 Fujitsu Ltd Chemical plasma growing method in vapor phase
US4361595A (en) * 1981-01-28 1982-11-30 Rca Corporation Method for preparing an abrasive lapping disc
US4355052A (en) * 1981-04-20 1982-10-19 Rca Corporation Method of preparing an abrasive coated substrate
JPS58197282A (ja) * 1982-05-12 1983-11-16 Nippon Steel Corp 耐銹性ステンレス鋼およびその製造方法
JPS5958819A (ja) * 1982-09-29 1984-04-04 Hitachi Ltd 薄膜形成方法
US4430361A (en) * 1983-02-02 1984-02-07 Rca Corporation Apparatus and method for preparing an abrasive coated substrate

Also Published As

Publication number Publication date
EP0200086A3 (en) 1987-06-16
US4759993A (en) 1988-07-26
CA1242616A (en) 1988-10-04
EP0200086B1 (de) 1990-07-25
EP0200086A2 (de) 1986-11-05
KR860008300A (ko) 1986-11-14
JPS61291976A (ja) 1986-12-22
JPH0470393B2 (de) 1992-11-10
KR930001520B1 (ko) 1993-03-02

Similar Documents

Publication Publication Date Title
DE3672880D1 (de) Mit sio2-x ueberzogene gegenstaende durch plasmachemische abscheidung aus der dampfphase und verfahren zur herstellung solcher ueberzuege durch plasmachemische abscheidung aus der dampfphase.
DE3867870D1 (de) Vorrichtung zur beschichtung durch abscheidung aus der gasphase mit perforierter duese.
DE69306783D1 (de) Reaktor zur herstellung von halbleiterplaettchen durch gasphasenabscheidung
DE59307302D1 (de) Verfahren zur Herstellung von Mehrschichtlackierungen
DE69002398D1 (de) Verfahren zur herstellung eines pulvers durch zerstaeuben mit gas.
DE69233359D1 (de) Verfahren zur herstellung einer halbleiter-dünnschicht mit einer chemischen gasphasen-beschichtungsanlage
DE59308693D1 (de) Verfahren zur Herstellung von Mehrschichtlackierungen
DE69232749D1 (de) Verfahren zur Herstellung von defektfreiem Silizium auf einem isolierenden Substrat
DE3876120D1 (de) Chemisches gasphasenabscheidungsverfahren zur herstellung einer kohlenstoffschicht.
DE59404573D1 (de) Verfahren zur Herstellung von Mehrschichtlackierungen
DE3482186D1 (de) Durch strahlung vernetzbare ueberzugszusammensetzung und verfahren zu ihrer herstellung.
DE69205057D1 (de) Verfahren zur Herstellung von Überzugsfilmen.
DE3485898D1 (de) Induktiv beheitzter reaktor zur chemischen abscheidung aus der dampfphase.
DE69212555D1 (de) Verfahren zur Herstellung von gesinterten Körpern aus einer Aluminium-Legierung
DE3763902D1 (de) Verfahren zur herstellung eines halbleiterelementes, einschliesslich der abscheidung von schichten auf ein substrat aus der gasphase.
DE3782983D1 (de) Verfahren zur herstellung eines polyimidfilms durch chemische ablagerung aus der dampfphase.
DE3766167D1 (de) Verfahren zur herstellung von elektrisch leitenden formkoerpern durch plasmaaktivierte chemische abscheidung aus der gasphase.
DE3676833D1 (de) Verfahren zur herstellung von perfluorpolyaethern mit regulierter molekuelmasse aus dem produkt erhalten in der c2f4 photooxydation.
DE69012409D1 (de) Vorrichtung zur Herstellung von Halbleitern durch Abscheidung aus der Gasphase.
DE69123555D1 (de) Verfahren zur Herstellung von Überzügen aus supraleitendem Oxyd
DE69318858D1 (de) Verfahren zur herstellung von duroplastischen, mesogenen, orientierten kunststoffen enthaltenden verbundmaterialien
DE69423510D1 (de) Verfahren zur herstellung keramischer pulver durch sprühtrocknen
DE69010178D1 (de) Verfahren zur herstellung von pulverförmigen perovskiteverbindungen.
DE3668164D1 (de) Verfahren zur herstellung von tertiaeren olefinen durch zersetzung von alkyl-tert.-alkylaethern.
DE58907207D1 (de) Verfahren zur Herstellung von metallischen Schichten.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee