DE3782983D1 - Verfahren zur herstellung eines polyimidfilms durch chemische ablagerung aus der dampfphase. - Google Patents

Verfahren zur herstellung eines polyimidfilms durch chemische ablagerung aus der dampfphase.

Info

Publication number
DE3782983D1
DE3782983D1 DE8787110633T DE3782983T DE3782983D1 DE 3782983 D1 DE3782983 D1 DE 3782983D1 DE 8787110633 T DE8787110633 T DE 8787110633T DE 3782983 T DE3782983 T DE 3782983T DE 3782983 D1 DE3782983 D1 DE 3782983D1
Authority
DE
Germany
Prior art keywords
producing
polyimide film
steam phase
chemical deposit
deposit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787110633T
Other languages
English (en)
Other versions
DE3782983T2 (de
Inventor
Shunichi Numata
Takayoshi Ikeda
Koji Fujisaki
Takao Miwa
Noriyuki Kinjo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3782983D1 publication Critical patent/DE3782983D1/de
Publication of DE3782983T2 publication Critical patent/DE3782983T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Physical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
DE8787110633T 1986-07-30 1987-07-22 Verfahren zur herstellung eines polyimidfilms durch chemische ablagerung aus der dampfphase. Expired - Fee Related DE3782983T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17750986 1986-07-30

Publications (2)

Publication Number Publication Date
DE3782983D1 true DE3782983D1 (de) 1993-01-21
DE3782983T2 DE3782983T2 (de) 1993-04-08

Family

ID=16032148

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787110633T Expired - Fee Related DE3782983T2 (de) 1986-07-30 1987-07-22 Verfahren zur herstellung eines polyimidfilms durch chemische ablagerung aus der dampfphase.

Country Status (4)

Country Link
US (1) US4759958A (de)
EP (1) EP0255037B1 (de)
JP (1) JP2619399B2 (de)
DE (1) DE3782983T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4831977A (en) * 1987-07-17 1989-05-23 Ethyl Corporation Pistons with wear resistant solid film lubricant coatings
JPH02178630A (ja) * 1988-12-29 1990-07-11 Sharp Corp ポリイミド薄膜の製法及びその装置
DE4115872A1 (de) * 1991-05-15 1992-11-19 Basf Ag Verfahren zur herstellung duenner polyimidschutzschichten auf keramischen supraleitern oder hochtemperatursupraleitern
DE4133546C2 (de) * 1991-10-10 2000-12-07 Mahle Gmbh Kolben-Zylinderanordnung eines Verbrennungsmotors
US7294578B1 (en) * 1995-06-02 2007-11-13 Micron Technology, Inc. Use of a plasma source to form a layer during the formation of a semiconductor device
US6716769B1 (en) 1995-06-02 2004-04-06 Micron Technology, Inc. Use of a plasma source to form a layer during the formation of a semiconductor device
US5950092A (en) * 1995-06-02 1999-09-07 Micron Technology, Inc. Use of a plasma source to form a layer during the formation of a semiconductor device
US5904486A (en) * 1997-09-30 1999-05-18 Intel Corporation Method for performing a circuit edit through the back side of an integrated circuit die
US6159754A (en) * 1998-05-07 2000-12-12 Intel Corporation Method of making a circuit edit interconnect structure through the backside of an integrated circuit die
JP2000164942A (ja) * 1998-11-25 2000-06-16 Matsushita Electric Works Ltd 熱電モジュール
JP2004115777A (ja) * 2002-09-06 2004-04-15 Ulvac Japan Ltd 抗菌性高分子及びその製造方法、抗菌性高分子被膜及びその作製方法、並びにこの被膜を表面に有する物品
CN1849102B (zh) 2003-07-08 2011-01-19 文托技术有限公司 用于主动脉瓣狭窄治疗中通过动脉输送的可植入式修复装置及其方法
JP2005083792A (ja) * 2003-09-05 2005-03-31 Konica Minolta Medical & Graphic Inc 放射線画像変換パネル及びその製造方法
DE202005011177U1 (de) 2005-07-15 2006-11-23 J & M Analytische Mess- Und Regeltechnik Gmbh Vorrichtung zur Analyse, insbesondere fotometrischen oder spektralfotometrischen Analyse
JP4863292B2 (ja) * 2007-04-27 2012-01-25 国立大学法人 岡山大学 ポリイミドの製造方法
JP6020239B2 (ja) * 2012-04-27 2016-11-02 東京エレクトロン株式会社 成膜方法及び成膜装置
US9594287B2 (en) * 2014-08-24 2017-03-14 Royole Corporation Substrate-less flexible display and method of manufacturing the same
DE102017119280A1 (de) * 2017-08-23 2019-02-28 Heraeus Noblelight Gmbh Verfahren und Vorrichtung zur Herstellung einer Polyimidschicht auf einem Substrat

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1227843A (de) * 1967-03-14 1971-04-07
DE1720691A1 (de) * 1967-07-26 1971-07-15 Bayer Ag Verfahren zur Herstellung von Polyimiden
US4104438A (en) * 1975-01-20 1978-08-01 E. I. Du Pont De Nemours And Company Gas-barrier coated films, sheets or foils and method of preparation
US4180614A (en) * 1975-01-20 1979-12-25 E. I. Du Pont De Nemours And Company Gas-barrier coated films, sheets or foils and method of preparation
BR8300826A (pt) * 1982-02-22 1983-11-16 Minnesota Mining & Mfg Processo para aperfeicoar a resistencia a abrasao de camadas de metal depositadas, como vapor, e artigo obtido
DE3486131T2 (de) * 1983-08-01 1993-10-28 Hitachi Ltd Harzmaterial mit geringer thermischer Ausdehnung für Verdrahtungsisolationsfolie.
EP0155823B1 (de) * 1984-03-21 1989-07-26 Nihon Shinku Gijutsu Kabushiki Kaisha Beschichtung von Gegenständen mit Kunststoffilmen
JPH0740629B2 (ja) * 1984-08-31 1995-05-01 株式会社日立製作所 電子装置用多層配線基板の製法

Also Published As

Publication number Publication date
EP0255037B1 (de) 1992-12-09
DE3782983T2 (de) 1993-04-08
EP0255037A3 (en) 1989-03-15
JP2619399B2 (ja) 1997-06-11
EP0255037A2 (de) 1988-02-03
US4759958A (en) 1988-07-26
JPS63159434A (ja) 1988-07-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee