DE69413910D1 - Niedrigtemperaturverfahren zur Herstellung von kristallinen Silizium-Karbid Beschichtungen - Google Patents
Niedrigtemperaturverfahren zur Herstellung von kristallinen Silizium-Karbid BeschichtungenInfo
- Publication number
- DE69413910D1 DE69413910D1 DE69413910T DE69413910T DE69413910D1 DE 69413910 D1 DE69413910 D1 DE 69413910D1 DE 69413910 T DE69413910 T DE 69413910T DE 69413910 T DE69413910 T DE 69413910T DE 69413910 D1 DE69413910 D1 DE 69413910D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- low temperature
- silicon carbide
- crystalline silicon
- temperature process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/106,665 US5415126A (en) | 1993-08-16 | 1993-08-16 | Method of forming crystalline silicon carbide coatings at low temperatures |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69413910D1 true DE69413910D1 (de) | 1998-11-19 |
DE69413910T2 DE69413910T2 (de) | 1999-06-02 |
Family
ID=22312615
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69413910T Expired - Lifetime DE69413910T2 (de) | 1993-08-16 | 1994-08-10 | Niedrigtemperaturverfahren zur Herstellung von kristallinen Silizium-Karbid Beschichtungen |
Country Status (5)
Country | Link |
---|---|
US (1) | US5415126A (de) |
EP (1) | EP0639661B1 (de) |
JP (1) | JP3545459B2 (de) |
KR (1) | KR100287489B1 (de) |
DE (1) | DE69413910T2 (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5759908A (en) * | 1995-05-16 | 1998-06-02 | University Of Cincinnati | Method for forming SiC-SOI structures |
US5861346A (en) * | 1995-07-27 | 1999-01-19 | Regents Of The University Of California | Process for forming silicon carbide films and microcomponents |
JP3491436B2 (ja) * | 1996-03-29 | 2004-01-26 | 株式会社デンソー | 炭化珪素単結晶の製造方法 |
US7154153B1 (en) * | 1997-07-29 | 2006-12-26 | Micron Technology, Inc. | Memory device |
US6794255B1 (en) * | 1997-07-29 | 2004-09-21 | Micron Technology, Inc. | Carburized silicon gate insulators for integrated circuits |
US6746893B1 (en) | 1997-07-29 | 2004-06-08 | Micron Technology, Inc. | Transistor with variable electron affinity gate and methods of fabrication and use |
US7196929B1 (en) * | 1997-07-29 | 2007-03-27 | Micron Technology Inc | Method for operating a memory device having an amorphous silicon carbide gate insulator |
US6936849B1 (en) | 1997-07-29 | 2005-08-30 | Micron Technology, Inc. | Silicon carbide gate transistor |
US6031263A (en) | 1997-07-29 | 2000-02-29 | Micron Technology, Inc. | DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate |
US5886368A (en) | 1997-07-29 | 1999-03-23 | Micron Technology, Inc. | Transistor with silicon oxycarbide gate and methods of fabrication and use |
US6965123B1 (en) | 1997-07-29 | 2005-11-15 | Micron Technology, Inc. | Transistor with variable electron affinity gate and methods of fabrication and use |
US6749687B1 (en) * | 1998-01-09 | 2004-06-15 | Asm America, Inc. | In situ growth of oxide and silicon layers |
US6217937B1 (en) | 1998-07-15 | 2001-04-17 | Cornell Research Foundation, Inc. | High throughput OMVPE apparatus |
JP3650727B2 (ja) * | 2000-08-10 | 2005-05-25 | Hoya株式会社 | 炭化珪素製造方法 |
JP2002220299A (ja) * | 2001-01-19 | 2002-08-09 | Hoya Corp | 単結晶SiC及びその製造方法、SiC半導体装置並びにSiC複合材料 |
KR20030058571A (ko) * | 2001-12-31 | 2003-07-07 | 주식회사 하이닉스반도체 | 반도체소자의 제조방법 |
JP3920103B2 (ja) * | 2002-01-31 | 2007-05-30 | 大阪府 | 絶縁層埋め込み型半導体炭化シリコン基板の製造方法及びその製造装置 |
US20040166692A1 (en) * | 2003-02-26 | 2004-08-26 | Loboda Mark Jon | Method for producing hydrogenated silicon oxycarbide films |
US7261919B2 (en) * | 2003-11-18 | 2007-08-28 | Flx Micro, Inc. | Silicon carbide and other films and method of deposition |
JP2006179799A (ja) * | 2004-12-24 | 2006-07-06 | Toshiba Ceramics Co Ltd | 窒化ガリウム系化合物半導体およびその製造方法 |
US7888248B2 (en) * | 2007-07-13 | 2011-02-15 | Northrop Grumman Systems Corporation | Method of producing large area SiC substrates |
JP5415853B2 (ja) * | 2009-07-10 | 2014-02-12 | 東京エレクトロン株式会社 | 表面処理方法 |
DE112015006024T5 (de) * | 2015-01-21 | 2017-10-12 | Sumitomo Electric Industries, Ltd. | Kristallzüchtungsvorrichtung, Verfahren zum Herstellen eines Siliziumkarbid-Einkristalls, Siliziumkarbid-Einkristallsubstrat und Siliziumkarbid-Epitaxiesubstrat |
TWI585230B (zh) * | 2015-02-06 | 2017-06-01 | 氣體產品及化學品股份公司 | 用於碳摻雜的含矽膜的組合物及其方法 |
US11851756B2 (en) * | 2017-09-14 | 2023-12-26 | Versum Materials Us, Llc | Methods for depositing silicon-containing films |
DE102018107922A1 (de) * | 2018-04-04 | 2019-10-10 | Infineon Technologies Ag | Verfahren zum Verarbeiten eines Siliciumcarbid enthaltenden kristallinen Substrats, Siliciumcarbidchip und Verarbeitungskammer |
JP7259615B2 (ja) * | 2019-07-24 | 2023-04-18 | 株式会社Sumco | ヘテロエピタキシャルウェーハの製造方法 |
JP7218832B1 (ja) * | 2022-06-14 | 2023-02-07 | 信越半導体株式会社 | ヘテロエピタキシャルウェーハの製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NO881723L (no) * | 1987-04-22 | 1988-10-24 | Idemitsu Petrochemical Co | Fremgangsmaate og innretning for fremstilling av diamanter. |
JPH067594B2 (ja) * | 1987-11-20 | 1994-01-26 | 富士通株式会社 | 半導体基板の製造方法 |
US5011706A (en) * | 1989-04-12 | 1991-04-30 | Dow Corning Corporation | Method of forming coatings containing amorphous silicon carbide |
EP0459425A1 (de) * | 1990-05-30 | 1991-12-04 | Idemitsu Petrochemical Company Limited | Verfahren zur Herstellung von Diamanten |
-
1993
- 1993-08-16 US US08/106,665 patent/US5415126A/en not_active Expired - Lifetime
-
1994
- 1994-08-10 EP EP94305931A patent/EP0639661B1/de not_active Expired - Lifetime
- 1994-08-10 DE DE69413910T patent/DE69413910T2/de not_active Expired - Lifetime
- 1994-08-13 KR KR1019940019974A patent/KR100287489B1/ko not_active IP Right Cessation
- 1994-08-16 JP JP19251194A patent/JP3545459B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR950006035A (ko) | 1995-03-20 |
EP0639661A3 (de) | 1996-04-03 |
KR100287489B1 (ko) | 2001-04-16 |
DE69413910T2 (de) | 1999-06-02 |
JP3545459B2 (ja) | 2004-07-21 |
EP0639661B1 (de) | 1998-10-14 |
JPH07165497A (ja) | 1995-06-27 |
EP0639661A2 (de) | 1995-02-22 |
US5415126A (en) | 1995-05-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |