DE69413910T2 - Niedrigtemperaturverfahren zur Herstellung von kristallinen Silizium-Karbid Beschichtungen - Google Patents

Niedrigtemperaturverfahren zur Herstellung von kristallinen Silizium-Karbid Beschichtungen

Info

Publication number
DE69413910T2
DE69413910T2 DE69413910T DE69413910T DE69413910T2 DE 69413910 T2 DE69413910 T2 DE 69413910T2 DE 69413910 T DE69413910 T DE 69413910T DE 69413910 T DE69413910 T DE 69413910T DE 69413910 T2 DE69413910 T2 DE 69413910T2
Authority
DE
Germany
Prior art keywords
production
low temperature
silicon carbide
crystalline silicon
temperature process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69413910T
Other languages
English (en)
Other versions
DE69413910D1 (de
Inventor
Mark Jon Loboda
Andrew J Steckl
Ji-Ping Li
Chong Yuan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Application granted granted Critical
Publication of DE69413910D1 publication Critical patent/DE69413910D1/de
Publication of DE69413910T2 publication Critical patent/DE69413910T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69413910T 1993-08-16 1994-08-10 Niedrigtemperaturverfahren zur Herstellung von kristallinen Silizium-Karbid Beschichtungen Expired - Lifetime DE69413910T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/106,665 US5415126A (en) 1993-08-16 1993-08-16 Method of forming crystalline silicon carbide coatings at low temperatures

Publications (2)

Publication Number Publication Date
DE69413910D1 DE69413910D1 (de) 1998-11-19
DE69413910T2 true DE69413910T2 (de) 1999-06-02

Family

ID=22312615

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69413910T Expired - Lifetime DE69413910T2 (de) 1993-08-16 1994-08-10 Niedrigtemperaturverfahren zur Herstellung von kristallinen Silizium-Karbid Beschichtungen

Country Status (5)

Country Link
US (1) US5415126A (de)
EP (1) EP0639661B1 (de)
JP (1) JP3545459B2 (de)
KR (1) KR100287489B1 (de)
DE (1) DE69413910T2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5759908A (en) * 1995-05-16 1998-06-02 University Of Cincinnati Method for forming SiC-SOI structures
US5861346A (en) * 1995-07-27 1999-01-19 Regents Of The University Of California Process for forming silicon carbide films and microcomponents
JP3491436B2 (ja) * 1996-03-29 2004-01-26 株式会社デンソー 炭化珪素単結晶の製造方法
US6746893B1 (en) 1997-07-29 2004-06-08 Micron Technology, Inc. Transistor with variable electron affinity gate and methods of fabrication and use
US6936849B1 (en) 1997-07-29 2005-08-30 Micron Technology, Inc. Silicon carbide gate transistor
US5886368A (en) 1997-07-29 1999-03-23 Micron Technology, Inc. Transistor with silicon oxycarbide gate and methods of fabrication and use
US6965123B1 (en) 1997-07-29 2005-11-15 Micron Technology, Inc. Transistor with variable electron affinity gate and methods of fabrication and use
US7154153B1 (en) * 1997-07-29 2006-12-26 Micron Technology, Inc. Memory device
US6794255B1 (en) * 1997-07-29 2004-09-21 Micron Technology, Inc. Carburized silicon gate insulators for integrated circuits
US7196929B1 (en) * 1997-07-29 2007-03-27 Micron Technology Inc Method for operating a memory device having an amorphous silicon carbide gate insulator
US6031263A (en) 1997-07-29 2000-02-29 Micron Technology, Inc. DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate
US6749687B1 (en) 1998-01-09 2004-06-15 Asm America, Inc. In situ growth of oxide and silicon layers
US6217937B1 (en) 1998-07-15 2001-04-17 Cornell Research Foundation, Inc. High throughput OMVPE apparatus
JP3650727B2 (ja) * 2000-08-10 2005-05-25 Ｈｏｙａ株式会社 炭化珪素製造方法
JP2002220299A (ja) * 2001-01-19 2002-08-09 Hoya Corp 単結晶ＳｉＣ及びその製造方法、ＳｉＣ半導体装置並びにＳｉＣ複合材料
KR20030058571A (ko) * 2001-12-31 2003-07-07 주식회사 하이닉스반도체 반도체소자의 제조방법
JP3920103B2 (ja) * 2002-01-31 2007-05-30 大阪府 絶縁層埋め込み型半導体炭化シリコン基板の製造方法及びその製造装置
US20040166692A1 (en) * 2003-02-26 2004-08-26 Loboda Mark Jon Method for producing hydrogenated silicon oxycarbide films
US7261919B2 (en) * 2003-11-18 2007-08-28 Flx Micro, Inc. Silicon carbide and other films and method of deposition
JP2006179799A (ja) * 2004-12-24 2006-07-06 Toshiba Ceramics Co Ltd 窒化ガリウム系化合物半導体およびその製造方法
US7888248B2 (en) * 2007-07-13 2011-02-15 Northrop Grumman Systems Corporation Method of producing large area SiC substrates
JP5415853B2 (ja) * 2009-07-10 2014-02-12 東京エレクトロン株式会社 表面処理方法
US10494735B2 (en) * 2015-01-21 2019-12-03 Sumitomo Electric Industries, Ltd. Crystal growth apparatus, method for manufacturing silicon carbide single crystal, silicon carbide single crystal substrate, and silicon carbide epitaxial substrate
CN107406978B (zh) * 2015-02-06 2019-12-03 弗萨姆材料美国有限责任公司 用于碳掺杂含硅膜的组合物以及使用所述组合物的方法
CN115992345A (zh) * 2017-09-14 2023-04-21 弗萨姆材料美国有限责任公司 用于沉积含硅膜的组合物和方法
DE102018107922A1 (de) * 2018-04-04 2019-10-10 Infineon Technologies Ag Verfahren zum Verarbeiten eines Siliciumcarbid enthaltenden kristallinen Substrats, Siliciumcarbidchip und Verarbeitungskammer
JP7259615B2 (ja) * 2019-07-24 2023-04-18 株式会社Sumco ヘテロエピタキシャルウェーハの製造方法
JP7218832B1 (ja) * 2022-06-14 2023-02-07 信越半導体株式会社 ヘテロエピタキシャルウェーハの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NO881723L (no) * 1987-04-22 1988-10-24 Idemitsu Petrochemical Co Fremgangsmaate og innretning for fremstilling av diamanter.
JPH067594B2 (ja) * 1987-11-20 1994-01-26 富士通株式会社 半導体基板の製造方法
US5011706A (en) * 1989-04-12 1991-04-30 Dow Corning Corporation Method of forming coatings containing amorphous silicon carbide
EP0459425A1 (de) * 1990-05-30 1991-12-04 Idemitsu Petrochemical Company Limited Verfahren zur Herstellung von Diamanten

Also Published As

Publication number Publication date
EP0639661B1 (de) 1998-10-14
JPH07165497A (ja) 1995-06-27
EP0639661A2 (de) 1995-02-22
KR950006035A (ko) 1995-03-20
EP0639661A3 (de) 1996-04-03
KR100287489B1 (ko) 2001-04-16
DE69413910D1 (de) 1998-11-19
JP3545459B2 (ja) 2004-07-21
US5415126A (en) 1995-05-16

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