DE69413138D1 - Verfahren zur Bildung von Beschichtungen aus kristallinem Siliziumcarbid - Google Patents

Verfahren zur Bildung von Beschichtungen aus kristallinem Siliziumcarbid

Info

Publication number
DE69413138D1
DE69413138D1 DE69413138T DE69413138T DE69413138D1 DE 69413138 D1 DE69413138 D1 DE 69413138D1 DE 69413138 T DE69413138 T DE 69413138T DE 69413138 T DE69413138 T DE 69413138T DE 69413138 D1 DE69413138 D1 DE 69413138D1
Authority
DE
Germany
Prior art keywords
coatings
formation
silicon carbide
crystalline silicon
crystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69413138T
Other languages
English (en)
Other versions
DE69413138T2 (de
Inventor
Mark Jon Loboda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of DE69413138D1 publication Critical patent/DE69413138D1/de
Application granted granted Critical
Publication of DE69413138T2 publication Critical patent/DE69413138T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69413138T 1993-07-01 1994-06-23 Verfahren zur Bildung von Beschichtungen aus kristallinem Siliziumcarbid Expired - Lifetime DE69413138T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/084,914 US5465680A (en) 1993-07-01 1993-07-01 Method of forming crystalline silicon carbide coatings

Publications (2)

Publication Number Publication Date
DE69413138D1 true DE69413138D1 (de) 1998-10-15
DE69413138T2 DE69413138T2 (de) 1999-04-22

Family

ID=22188002

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69413138T Expired - Lifetime DE69413138T2 (de) 1993-07-01 1994-06-23 Verfahren zur Bildung von Beschichtungen aus kristallinem Siliziumcarbid

Country Status (5)

Country Link
US (1) US5465680A (de)
EP (1) EP0632145B1 (de)
JP (1) JPH07147251A (de)
KR (1) KR100284374B1 (de)
DE (1) DE69413138T2 (de)

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US6303523B2 (en) * 1998-02-11 2001-10-16 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US6660656B2 (en) 1998-02-11 2003-12-09 Applied Materials Inc. Plasma processes for depositing low dielectric constant films
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US6667553B2 (en) 1998-05-29 2003-12-23 Dow Corning Corporation H:SiOC coated substrates
US6635583B2 (en) * 1998-10-01 2003-10-21 Applied Materials, Inc. Silicon carbide deposition for use as a low-dielectric constant anti-reflective coating
US6974766B1 (en) 1998-10-01 2005-12-13 Applied Materials, Inc. In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
US6916399B1 (en) 1999-06-03 2005-07-12 Applied Materials Inc Temperature controlled window with a fluid supply system
US6821571B2 (en) 1999-06-18 2004-11-23 Applied Materials Inc. Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
US6423384B1 (en) 1999-06-25 2002-07-23 Applied Materials, Inc. HDP-CVD deposition of low dielectric constant amorphous carbon film
US6399489B1 (en) 1999-11-01 2002-06-04 Applied Materials, Inc. Barrier layer deposition using HDP-CVD
US6794311B2 (en) 2000-07-14 2004-09-21 Applied Materials Inc. Method and apparatus for treating low k dielectric layers to reduce diffusion
US6764958B1 (en) * 2000-07-28 2004-07-20 Applied Materials Inc. Method of depositing dielectric films
JP2002220299A (ja) * 2001-01-19 2002-08-09 Hoya Corp 単結晶ＳｉＣ及びその製造方法、ＳｉＣ半導体装置並びにＳｉＣ複合材料
US6537733B2 (en) 2001-02-23 2003-03-25 Applied Materials, Inc. Method of depositing low dielectric constant silicon carbide layers
US6709721B2 (en) 2001-03-28 2004-03-23 Applied Materials Inc. Purge heater design and process development for the improvement of low k film properties
US6472333B2 (en) 2001-03-28 2002-10-29 Applied Materials, Inc. Silicon carbide cap layers for low dielectric constant silicon oxide layers
US6777171B2 (en) 2001-04-20 2004-08-17 Applied Materials, Inc. Fluorine-containing layers for damascene structures
US6486082B1 (en) 2001-06-18 2002-11-26 Applied Materials, Inc. CVD plasma assisted lower dielectric constant sicoh film
US6926926B2 (en) * 2001-09-10 2005-08-09 Applied Materials, Inc. Silicon carbide deposited by high density plasma chemical-vapor deposition with bias
US6759327B2 (en) * 2001-10-09 2004-07-06 Applied Materials Inc. Method of depositing low k barrier layers
US6656837B2 (en) * 2001-10-11 2003-12-02 Applied Materials, Inc. Method of eliminating photoresist poisoning in damascene applications
US6838393B2 (en) 2001-12-14 2005-01-04 Applied Materials, Inc. Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide
US6890850B2 (en) 2001-12-14 2005-05-10 Applied Materials, Inc. Method of depositing dielectric materials in damascene applications
US6699784B2 (en) 2001-12-14 2004-03-02 Applied Materials Inc. Method for depositing a low k dielectric film (K>3.5) for hard mask application
US7091137B2 (en) 2001-12-14 2006-08-15 Applied Materials Bi-layer approach for a hermetic low dielectric constant layer for barrier applications
KR20030058571A (ko) * 2001-12-31 2003-07-07 주식회사 하이닉스반도체 반도체소자의 제조방법
US6849562B2 (en) * 2002-03-04 2005-02-01 Applied Materials, Inc. Method of depositing a low k dielectric barrier film for copper damascene application
US20030194496A1 (en) * 2002-04-11 2003-10-16 Applied Materials, Inc. Methods for depositing dielectric material
US6656840B2 (en) 2002-04-29 2003-12-02 Applied Materials Inc. Method for forming silicon containing layers on a substrate
US7008484B2 (en) * 2002-05-06 2006-03-07 Applied Materials Inc. Method and apparatus for deposition of low dielectric constant materials
US6800930B2 (en) * 2002-07-31 2004-10-05 Micron Technology, Inc. Semiconductor dice having back side redistribution layer accessed using through-silicon vias, and assemblies
WO2004015165A1 (en) * 2002-08-08 2004-02-19 Trikon Technologies Limited Improvements to showerheads
US7749563B2 (en) 2002-10-07 2010-07-06 Applied Materials, Inc. Two-layer film for next generation damascene barrier application with good oxidation resistance
US7270713B2 (en) * 2003-01-07 2007-09-18 Applied Materials, Inc. Tunable gas distribution plate assembly
US6790788B2 (en) 2003-01-13 2004-09-14 Applied Materials Inc. Method of improving stability in low k barrier layers
US6942753B2 (en) 2003-04-16 2005-09-13 Applied Materials, Inc. Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
US7030041B2 (en) 2004-03-15 2006-04-18 Applied Materials Inc. Adhesion improvement for low k dielectrics
US7229911B2 (en) 2004-04-19 2007-06-12 Applied Materials, Inc. Adhesion improvement for low k dielectrics to conductive materials
US7288205B2 (en) 2004-07-09 2007-10-30 Applied Materials, Inc. Hermetic low dielectric constant layer for barrier applications
US20060021703A1 (en) * 2004-07-29 2006-02-02 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
JP4524447B2 (ja) * 2004-11-19 2010-08-18 住友大阪セメント株式会社 炭化珪素薄膜の成膜方法
DE102008060923B4 (de) * 2008-12-06 2012-09-27 Innovent E.V. Verwendung einer Schicht
JP5415853B2 (ja) * 2009-07-10 2014-02-12 東京エレクトロン株式会社 表面処理方法
US10604660B2 (en) * 2010-10-05 2020-03-31 Silcotek Corp. Wear resistant coating, article, and method
JP5817127B2 (ja) * 2011-01-21 2015-11-18 株式会社Sumco 半導体基板及びその製造方法
DE102011009963A1 (de) * 2011-02-01 2012-08-02 Linde Aktiengesellschaft Verfahren zum Lichtbogenfügen und Schutzgasmischung
KR101916289B1 (ko) * 2011-12-29 2019-01-24 엘지이노텍 주식회사 탄화규소 증착 방법
KR101607257B1 (ko) 2014-12-22 2016-03-30 주식회사 포스코 탄화규소 기판 표면 처리 방법

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US3843399A (en) * 1972-04-19 1974-10-22 Rca Corp Metallized video disc having an insulating layer thereon
DE2364989C3 (de) * 1973-12-28 1979-10-18 Consortium Fuer Elektrochemische Industrie Gmbh, 8000 Muenchen Verfahren zur Herstellung von Schichten aus Siliciumcarbid auf einem Siliciumsubstrat
JPS5824371B2 (ja) * 1975-07-25 1983-05-20 小沢 寿一郎 炭化珪素薄膜の製造方法
JPS59128281A (ja) * 1982-12-29 1984-07-24 信越化学工業株式会社 炭化けい素被覆物の製造方法
NL8500645A (nl) * 1985-03-07 1986-10-01 Philips Nv Werkwijze voor het afzetten van een laag, die in hoofdzaak uit siliciumcarbide bestaat op een substraat.
JPS62224674A (ja) * 1986-03-26 1987-10-02 Sharp Corp 微結晶炭化珪素膜の製造方法
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JPH067594B2 (ja) * 1987-11-20 1994-01-26 富士通株式会社 半導体基板の製造方法
DE69019202T2 (de) * 1989-02-27 1996-01-04 Matsushita Electric Ind Co Ltd Verfahren zur Herstellung eines hoch orientierten ultralangen konjugierten Polymers.
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Also Published As

Publication number Publication date
EP0632145A3 (de) 1995-03-29
KR100284374B1 (ko) 2001-03-02
US5465680A (en) 1995-11-14
JPH07147251A (ja) 1995-06-06
KR950003484A (ko) 1995-02-17
EP0632145B1 (de) 1998-09-09
DE69413138T2 (de) 1999-04-22
EP0632145A2 (de) 1995-01-04

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