DE69020221D1 - Verfahren zur Bildung von amorphes Siliziumcarbid enthaltenden Beschichtungen. - Google Patents

Verfahren zur Bildung von amorphes Siliziumcarbid enthaltenden Beschichtungen.

Info

Publication number
DE69020221D1
DE69020221D1 DE69020221T DE69020221T DE69020221D1 DE 69020221 D1 DE69020221 D1 DE 69020221D1 DE 69020221 T DE69020221 T DE 69020221T DE 69020221 T DE69020221 T DE 69020221T DE 69020221 D1 DE69020221 D1 DE 69020221D1
Authority
DE
Germany
Prior art keywords
formation
silicon carbide
amorphous silicon
containing amorphous
coatings containing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69020221T
Other languages
English (en)
Other versions
DE69020221T2 (de
Inventor
Kenneth George Sharp
Leo Tarhay
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Application granted granted Critical
Publication of DE69020221D1 publication Critical patent/DE69020221D1/de
Publication of DE69020221T2 publication Critical patent/DE69020221T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE69020221T 1989-04-12 1990-03-29 Verfahren zur Bildung von amorphes Siliziumcarbid enthaltenden Beschichtungen. Expired - Fee Related DE69020221T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/336,927 US5011706A (en) 1989-04-12 1989-04-12 Method of forming coatings containing amorphous silicon carbide

Publications (2)

Publication Number Publication Date
DE69020221D1 true DE69020221D1 (de) 1995-07-27
DE69020221T2 DE69020221T2 (de) 1996-02-08

Family

ID=23318313

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69020221T Expired - Fee Related DE69020221T2 (de) 1989-04-12 1990-03-29 Verfahren zur Bildung von amorphes Siliziumcarbid enthaltenden Beschichtungen.

Country Status (8)

Country Link
US (1) US5011706A (de)
EP (1) EP0392703B1 (de)
JP (1) JPH0781186B2 (de)
KR (1) KR950007667B1 (de)
AU (1) AU632107B2 (de)
CA (1) CA2013478C (de)
DE (1) DE69020221T2 (de)
ES (1) ES2075146T3 (de)

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US5238866A (en) * 1991-09-11 1993-08-24 GmbH & Co. Ingenieurburo Berlin Biotronik Mess- und Therapiegerate Plasma enhanced chemical vapor deposition process for producing an amorphous semiconductive surface coating
CA2104340A1 (en) * 1992-08-31 1994-03-01 Grish Chandra Hermetic protection for integrated circuits
US5387480A (en) 1993-03-08 1995-02-07 Dow Corning Corporation High dielectric constant coatings
JPH0726382A (ja) * 1993-05-10 1995-01-27 Canon Inc 半導体膜の形成方法及び該半導体膜を有する半導体装置
US5465680A (en) * 1993-07-01 1995-11-14 Dow Corning Corporation Method of forming crystalline silicon carbide coatings
US5358755A (en) * 1993-08-13 1994-10-25 Amoco Corporation Amorphous hydrogenated silicon-carbon alloys and solar cells and other semiconductor devices produced therefrom
US5415126A (en) * 1993-08-16 1995-05-16 Dow Corning Corporation Method of forming crystalline silicon carbide coatings at low temperatures
DE4429380C1 (de) * 1994-08-15 1996-04-25 Biotronik Mess & Therapieg Verfahren zur Herstellung einer nichtkollabierenden intravasalen Gefäßprothese (Stent)
CA2157257C (en) * 1994-09-12 1999-08-10 Kazuhiko Endo Semiconductor device with amorphous carbon layer and method of fabricating the same
KR0158780B1 (ko) * 1994-12-22 1998-11-16 가네꼬 히사시 화학 증착법에 의한 박막형성 방법 및 장치
US5693701A (en) 1995-10-26 1997-12-02 Dow Corning Corporation Tamper-proof electronic coatings
TW362118B (en) 1995-10-30 1999-06-21 Dow Corning Method for depositing amorphous SiNC coatings
US5753374A (en) 1995-11-27 1998-05-19 Dow Corning Corporation Protective electronic coating
US6680489B1 (en) * 1995-12-20 2004-01-20 Advanced Technology Materials, Inc. Amorphous silicon carbide thin film coating
US5780163A (en) * 1996-06-05 1998-07-14 Dow Corning Corporation Multilayer coating for microelectronic devices
US5693565A (en) * 1996-07-15 1997-12-02 Dow Corning Corporation Semiconductor chips suitable for known good die testing
US5863595A (en) * 1996-10-04 1999-01-26 Dow Corning Corporation Thick ceramic coatings for electronic devices
US5730792A (en) * 1996-10-04 1998-03-24 Dow Corning Corporation Opaque ceramic coatings
US5711987A (en) * 1996-10-04 1998-01-27 Dow Corning Corporation Electronic coatings
US5776235A (en) * 1996-10-04 1998-07-07 Dow Corning Corporation Thick opaque ceramic coatings
US5707681A (en) * 1997-02-07 1998-01-13 Dow Corning Corporation Method of producing coatings on electronic substrates
US5866197A (en) * 1997-06-06 1999-02-02 Dow Corning Corporation Method for producing thick crack-free coating from hydrogen silsequioxane resin
JP2961230B1 (ja) 1998-07-13 1999-10-12 工業技術院長 金属超微粒子分散体及びその製造方法
US6635583B2 (en) 1998-10-01 2003-10-21 Applied Materials, Inc. Silicon carbide deposition for use as a low-dielectric constant anti-reflective coating
US6974766B1 (en) 1998-10-01 2005-12-13 Applied Materials, Inc. In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
EP1191582A4 (de) * 1999-03-09 2004-09-22 Tokyo Electron Ltd Produktionsmethode für eine halbleiteranordnung
US6821571B2 (en) * 1999-06-18 2004-11-23 Applied Materials Inc. Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
EP1123991A3 (de) * 2000-02-08 2002-11-13 Asm Japan K.K. Materialen mit niedrieger Dielektrizitätskonstante und Verfahren
US6794311B2 (en) 2000-07-14 2004-09-21 Applied Materials Inc. Method and apparatus for treating low k dielectric layers to reduce diffusion
US6905981B1 (en) 2000-11-24 2005-06-14 Asm Japan K.K. Low-k dielectric materials and processes
US6670278B2 (en) 2001-03-30 2003-12-30 Lam Research Corporation Method of plasma etching of silicon carbide
US6759327B2 (en) 2001-10-09 2004-07-06 Applied Materials Inc. Method of depositing low k barrier layers
US7091137B2 (en) * 2001-12-14 2006-08-15 Applied Materials Bi-layer approach for a hermetic low dielectric constant layer for barrier applications
US6890850B2 (en) * 2001-12-14 2005-05-10 Applied Materials, Inc. Method of depositing dielectric materials in damascene applications
US6838393B2 (en) * 2001-12-14 2005-01-04 Applied Materials, Inc. Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide
US6777349B2 (en) * 2002-03-13 2004-08-17 Novellus Systems, Inc. Hermetic silicon carbide
US7749563B2 (en) * 2002-10-07 2010-07-06 Applied Materials, Inc. Two-layer film for next generation damascene barrier application with good oxidation resistance
US6790788B2 (en) * 2003-01-13 2004-09-14 Applied Materials Inc. Method of improving stability in low k barrier layers
US20040166692A1 (en) * 2003-02-26 2004-08-26 Loboda Mark Jon Method for producing hydrogenated silicon oxycarbide films
US20060158101A1 (en) * 2003-03-04 2006-07-20 Dow Corning Corporation Organic light-emitting diode
US20060008661A1 (en) * 2003-08-01 2006-01-12 Wijesundara Muthu B Manufacturable low-temperature silicon carbide deposition technology
US7030041B2 (en) * 2004-03-15 2006-04-18 Applied Materials Inc. Adhesion improvement for low k dielectrics
US7229911B2 (en) * 2004-04-19 2007-06-12 Applied Materials, Inc. Adhesion improvement for low k dielectrics to conductive materials
US20050233555A1 (en) * 2004-04-19 2005-10-20 Nagarajan Rajagopalan Adhesion improvement for low k dielectrics to conductive materials
US20050277302A1 (en) * 2004-05-28 2005-12-15 Nguyen Son V Advanced low dielectric constant barrier layers
US7229041B2 (en) * 2004-06-30 2007-06-12 Ohio Central Steel Company Lifting lid crusher
US7288205B2 (en) * 2004-07-09 2007-10-30 Applied Materials, Inc. Hermetic low dielectric constant layer for barrier applications
US20060121717A1 (en) * 2004-12-02 2006-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Bonding structure and fabrication thereof
US7821637B1 (en) 2007-02-22 2010-10-26 J.A. Woollam Co., Inc. System for controlling intensity of a beam of electromagnetic radiation and method for investigating materials with low specular reflectance and/or are depolarizing
KR101268910B1 (ko) * 2012-01-30 2013-06-04 주식회사 예섬 코팅모재에 대한 ＣＶＤ ＳｉＣ 코팅방법
JP7025534B2 (ja) * 2017-09-14 2022-02-24 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー シリコン含有膜堆積用の組成物及び方法
KR101866433B1 (ko) * 2017-11-29 2018-06-12 피엔에이건설 주식회사 친환경 도료를 이용한 교량의 강재 구조물 도장 공법
US11142820B2 (en) * 2019-01-17 2021-10-12 Seagate Technology Llc High refractive index hydrogenated silicon carbide and process
JP7420473B2 (ja) * 2019-02-01 2024-01-23 一般財団法人ファインセラミックスセンター ガス分離材およびその製造方法
WO2022072258A1 (en) * 2020-09-30 2022-04-07 Gelest, Inc. Silicon carbide thin films and vapor deposition methods thereof
US20220406595A1 (en) * 2021-06-22 2022-12-22 Applied Materials, Inc. Novel oxidants and strained-ring precursors

Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
US3400309A (en) * 1965-10-18 1968-09-03 Ibm Monolithic silicon device containing dielectrically isolatng film of silicon carbide
US4000054A (en) * 1970-11-06 1976-12-28 Microsystems International Limited Method of making thin film crossover structure
DE2836911C2 (de) * 1978-08-23 1986-11-06 Siemens AG, 1000 Berlin und 8000 München Passivierungsschicht für Halbleiterbauelemente
JPS59119733A (ja) * 1982-12-24 1984-07-11 Toshiba Corp 半導体装置
JPS6026664A (ja) * 1983-07-22 1985-02-09 Canon Inc アモルフアスシリコン堆積膜形成法
JPS60154521A (ja) * 1984-01-23 1985-08-14 Semiconductor Energy Lab Co Ltd 炭化珪素被膜作製方法
US4683145A (en) * 1984-04-16 1987-07-28 Canon Kabushiki Kaisha Method for forming deposited film
US4631179A (en) * 1985-05-28 1986-12-23 Ethyl Corporation Process for the production of silicon carbide by the pyrolysis of a polycarbosilane polymer
JPH0631185B2 (ja) * 1986-02-06 1994-04-27 東芝セラミツクス株式会社 炭化珪素発熱体の製造方法

Also Published As

Publication number Publication date
AU5310990A (en) 1990-10-18
EP0392703A3 (de) 1991-03-13
EP0392703B1 (de) 1995-06-21
ES2075146T3 (es) 1995-10-01
US5011706A (en) 1991-04-30
DE69020221T2 (de) 1996-02-08
KR900015806A (ko) 1990-11-10
JPH0781186B2 (ja) 1995-08-30
AU632107B2 (en) 1992-12-17
EP0392703A2 (de) 1990-10-17
KR950007667B1 (ko) 1995-07-14
CA2013478C (en) 1994-08-23
CA2013478A1 (en) 1990-10-12
JPH03115573A (ja) 1991-05-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee