ES2075146T3 - Procedimiento de descomposicion inducida por plasma de silil-ciclobutanos para formar recubrimientos continuos de carburo de silicio amorfo. - Google Patents

Procedimiento de descomposicion inducida por plasma de silil-ciclobutanos para formar recubrimientos continuos de carburo de silicio amorfo.

Info

Publication number
ES2075146T3
ES2075146T3 ES90303378T ES90303378T ES2075146T3 ES 2075146 T3 ES2075146 T3 ES 2075146T3 ES 90303378 T ES90303378 T ES 90303378T ES 90303378 T ES90303378 T ES 90303378T ES 2075146 T3 ES2075146 T3 ES 2075146T3
Authority
ES
Spain
Prior art keywords
cyclobutane
silil
plasma
silicon carbide
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES90303378T
Other languages
English (en)
Inventor
Kenneth George Sharp
Leo Tarhay
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Application granted granted Critical
Publication of ES2075146T3 publication Critical patent/ES2075146T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

METODO PARA FORMAR UN RECUBRIMIENTO CONTINUO DE CARBURO AMORFO DE SILICONA PARA LAS SUPERFICIES DE ARTICULOS, MEDIANTE LA DEPOSICION DE VAPOR QUIMICO DE PLASMA MEJORADO. EN EL METODO, EL VAPOR QUIMICO COMPRENDE UN CICLOBUTANO CONTENIENDO SILICONA, TAL COMO UN SILACICLOBUTANO O UN 1,3-DISILACICLOBUTANO. LOS RECUBRIMIENTOS FORMADOS CON ESTE METODO SON UTILES PARA APLICARLOS A LAS CELULAS SOLARES, PARA PREVENIR LA CORROSION DE LOS ELEMENTOS ELECTRONICOS, PARA FORMAR SUTRATOS DIELECTRICOS INTERMEDIOS ENTRE LOS SUSTRATOS DE METALIZACION DE LOS ELEMENTOS ELECTRONICOS, Y PARA HACER QUE LAS SUPERFICIES SEAN RESISTENTES A LA ABRASION.
ES90303378T 1989-04-12 1990-03-29 Procedimiento de descomposicion inducida por plasma de silil-ciclobutanos para formar recubrimientos continuos de carburo de silicio amorfo. Expired - Lifetime ES2075146T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/336,927 US5011706A (en) 1989-04-12 1989-04-12 Method of forming coatings containing amorphous silicon carbide

Publications (1)

Publication Number Publication Date
ES2075146T3 true ES2075146T3 (es) 1995-10-01

Family

ID=23318313

Family Applications (1)

Application Number Title Priority Date Filing Date
ES90303378T Expired - Lifetime ES2075146T3 (es) 1989-04-12 1990-03-29 Procedimiento de descomposicion inducida por plasma de silil-ciclobutanos para formar recubrimientos continuos de carburo de silicio amorfo.

Country Status (8)

Country Link
US (1) US5011706A (es)
EP (1) EP0392703B1 (es)
JP (1) JPH0781186B2 (es)
KR (1) KR950007667B1 (es)
AU (1) AU632107B2 (es)
CA (1) CA2013478C (es)
DE (1) DE69020221T2 (es)
ES (1) ES2075146T3 (es)

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US5465680A (en) * 1993-07-01 1995-11-14 Dow Corning Corporation Method of forming crystalline silicon carbide coatings
US5358755A (en) * 1993-08-13 1994-10-25 Amoco Corporation Amorphous hydrogenated silicon-carbon alloys and solar cells and other semiconductor devices produced therefrom
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CA2157257C (en) * 1994-09-12 1999-08-10 Kazuhiko Endo Semiconductor device with amorphous carbon layer and method of fabricating the same
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US5693701A (en) 1995-10-26 1997-12-02 Dow Corning Corporation Tamper-proof electronic coatings
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US5753374A (en) 1995-11-27 1998-05-19 Dow Corning Corporation Protective electronic coating
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US5780163A (en) * 1996-06-05 1998-07-14 Dow Corning Corporation Multilayer coating for microelectronic devices
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US5863595A (en) * 1996-10-04 1999-01-26 Dow Corning Corporation Thick ceramic coatings for electronic devices
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US5866197A (en) * 1997-06-06 1999-02-02 Dow Corning Corporation Method for producing thick crack-free coating from hydrogen silsequioxane resin
JP2961230B1 (ja) 1998-07-13 1999-10-12 工業技術院長 金属超微粒子分散体及びその製造方法
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US6759327B2 (en) 2001-10-09 2004-07-06 Applied Materials Inc. Method of depositing low k barrier layers
US6890850B2 (en) * 2001-12-14 2005-05-10 Applied Materials, Inc. Method of depositing dielectric materials in damascene applications
US6838393B2 (en) 2001-12-14 2005-01-04 Applied Materials, Inc. Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide
US7091137B2 (en) * 2001-12-14 2006-08-15 Applied Materials Bi-layer approach for a hermetic low dielectric constant layer for barrier applications
US6777349B2 (en) * 2002-03-13 2004-08-17 Novellus Systems, Inc. Hermetic silicon carbide
US7749563B2 (en) * 2002-10-07 2010-07-06 Applied Materials, Inc. Two-layer film for next generation damascene barrier application with good oxidation resistance
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US20040166692A1 (en) * 2003-02-26 2004-08-26 Loboda Mark Jon Method for producing hydrogenated silicon oxycarbide films
KR20050115268A (ko) * 2003-03-04 2005-12-07 다우 코닝 코포레이션 유기 발광 다이오드
WO2005057630A2 (en) * 2003-08-01 2005-06-23 The Regents Of The University Of California Manufacturable low-temperature silicon carbide deposition technology
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KR101268910B1 (ko) * 2012-01-30 2013-06-04 주식회사 예섬 코팅모재에 대한 ＣＶＤ ＳｉＣ 코팅방법
US11851756B2 (en) * 2017-09-14 2023-12-26 Versum Materials Us, Llc Methods for depositing silicon-containing films
KR101866433B1 (ko) * 2017-11-29 2018-06-12 피엔에이건설 주식회사 친환경 도료를 이용한 교량의 강재 구조물 도장 공법
US11142820B2 (en) * 2019-01-17 2021-10-12 Seagate Technology Llc High refractive index hydrogenated silicon carbide and process
JP7420473B2 (ja) * 2019-02-01 2024-01-23 一般財団法人ファインセラミックスセンター ガス分離材およびその製造方法
CN116234940A (zh) * 2020-09-30 2023-06-06 盖列斯特有限公司 碳化硅薄膜及其气相沉积方法
US20220406595A1 (en) * 2021-06-22 2022-12-22 Applied Materials, Inc. Novel oxidants and strained-ring precursors

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Also Published As

Publication number Publication date
EP0392703A3 (en) 1991-03-13
JPH0781186B2 (ja) 1995-08-30
DE69020221T2 (de) 1996-02-08
AU5310990A (en) 1990-10-18
JPH03115573A (ja) 1991-05-16
US5011706A (en) 1991-04-30
CA2013478C (en) 1994-08-23
EP0392703B1 (en) 1995-06-21
CA2013478A1 (en) 1990-10-12
AU632107B2 (en) 1992-12-17
DE69020221D1 (de) 1995-07-27
KR900015806A (ko) 1990-11-10
EP0392703A2 (en) 1990-10-17
KR950007667B1 (ko) 1995-07-14

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