KR930005115A - 저온,고압 상태에서의 실리콘 증착방법 - Google Patents

저온,고압 상태에서의 실리콘 증착방법 Download PDF

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Publication number
KR930005115A
KR930005115A KR1019920014177A KR920014177A KR930005115A KR 930005115 A KR930005115 A KR 930005115A KR 1019920014177 A KR1019920014177 A KR 1019920014177A KR 920014177 A KR920014177 A KR 920014177A KR 930005115 A KR930005115 A KR 930005115A
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temperature
silicon
gas
controlled
produce
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KR1019920014177A
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KR100272891B1 (ko
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빙글래스 이스라엘
케이. 칼슨 데이비드
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제임스 조셉 드롱
어플라이드 머티어리얼스, 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

내용 없음.

Description

저온, 고압 상태에서의 실리콘 증착방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 고압으로 실리콘이 웨이퍼 위에 증착되는, 본 발명에 따른 단일 웨이퍼 반응기를 나타낸 도면.

Claims (7)

  1. 도핑된 또는 도핑되지 않은 실리콘을 기판위에 증착시키는 방법으로서, a)온도제어 수단이 설비된 진공 챔버내로 기판을 제공하는 단계와, b)상기 기판의 온도를 약600℃내지 750℃사이에서 제어하는 단계와; 그리고 c)바람직한 두께의 실리콘 층이 얻어질때까지 약 13.2×10-3atm(10 Torr) 내지 462×10-3atm(350 Torr)사이의 압력을 제공하기 위하여 실리콘 전구물질 기체를 추가하는 단계를 포함하는 방법.
  2. 제1항에 있어서, 압력이 약 33×10-3atm(10Torr) 내지 250.8×10-3atm (190Torr) 사이에서 유지되는 방법.
  3. 제1항에 있어서, 기체 및 온도가 비 결정질 실리콘을 생산하도록 제어되는 방법.
  4. 제1항에 있어서, 기체 및 온도가 비 결정 및 다결정 실리콘의 혼합물을 생성하도록 제어되는 방법.
  5. 제1항에 있어서, 기체 및 온도가 다 결정 실리콘을 생산하도록 제어되는 방법.
  6. 제1항에 있어서, 기체 및 온도가 인으로 도핑된 실리콘을 생산하도록 제어되는 방법.
  7. 제6항에 있어서, 기체 및 온도가 인으로 도핑된 다 결정 실리콘을 생산하도록 제어되는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920014177A 1991-08-09 1992-08-07 저온, 고압 상태에서의 실리콘 증착방법 KR100272891B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US74295491A 1991-08-09 1991-08-09
US7/742,954 1991-08-09
US07/742,954 1991-08-09

Publications (2)

Publication Number Publication Date
KR930005115A true KR930005115A (ko) 1993-03-23
KR100272891B1 KR100272891B1 (ko) 2000-12-01

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KR1019920014177A KR100272891B1 (ko) 1991-08-09 1992-08-07 저온, 고압 상태에서의 실리콘 증착방법

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US (3) US5607724A (ko)
JP (2) JP3121131B2 (ko)
KR (1) KR100272891B1 (ko)

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Publication number Publication date
US5700520A (en) 1997-12-23
KR100272891B1 (ko) 2000-12-01
US5876797A (en) 1999-03-02
JP3121131B2 (ja) 2000-12-25
US5607724A (en) 1997-03-04
JPH05206034A (ja) 1993-08-13
JP2001028344A (ja) 2001-01-30

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