KR930005134A - 증착된 반도체상에 형성된 개선된 유전체 - Google Patents

증착된 반도체상에 형성된 개선된 유전체 Download PDF

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KR930005134A
KR930005134A KR1019920014891A KR920014891A KR930005134A KR 930005134 A KR930005134 A KR 930005134A KR 1019920014891 A KR1019920014891 A KR 1019920014891A KR 920014891 A KR920014891 A KR 920014891A KR 930005134 A KR930005134 A KR 930005134A
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silicon
sublayer
semiconductor
deposition
varying
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KR970009976B1 (ko
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루돌프 라도세비치 죠셉
쿠마 로이 프래딥
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제임스 에이취. 폭스
아메리칸 텔리폰 앤드 텔레그라프 캄파니
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음.

Description

증착된 반도체상에 형성된 개선된 유전체
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 증착된 반도체 층으로 형성된 종래기술의 커패시터의 도시도,
제2도는 시간 함수로서의 폴리 실리콘 증착속도에 있어서의 주기적 변화의 일례의 도시도,
제3도는 증착된 반도체 서브 층 및 그 위의 유전층의 도시도,
제4도는 예1에 대한 폴리실리콘 증착 속도에 있어서의 변화의 도시도.

Claims (13)

  1. 증착 가스로부터 반도체 층을 증착하는 단계와 상기 반도체층의 노출된 표면상에 유전체(35)을 형성하는 단계로 구성되는 반도체 장치를 만드는 방법에 있어서, 반도체 층(31,32,33,34)을 증착하는 상기 단계가 반도체의 증착 속도를 변화시킴에 의하여 실현되고 상기 변화는 부분압 및 증착 가스의 흐름속도로 이루어지는 그룹으로 부터 인자들중 적어도 하나를 변화시켜서 이루어지는 것을 특징으로 하는 방법.
  2. 제1항에 있어서, 상기 증착 동안에 상기 반도체 층내에 도펀트를 포함하여 적어도 하나의 다른 서브층과 비교하여 적어도 하나의 서브층내의 상기 도펀트의 농도를 변화시키는 단계를 더 포함하고 있는 방법.
  3. 제1항에 있어서, 상기 반도체가 실리콘인 방법.
  4. 제3항에 있어서, 상기 유전체 (35)가 실리콘 이산화물인 방법.
  5. 제1항에 있어서, 상기 형성이 단결정 실리콘상에 산화물을 형성하는 공정 동시에 실현하는 방법.
  6. 제5항에 있어서, 단결정 실리콘상에 형성된 산화물이 게이트 산화물인 방법.
  7. 제1항에 있어서, 상부 서브층(34)이 그 밑의 서브층보다 낮게 도핑되는 방법.
  8. 제1항에 있어서, 하부 서브층(31)이 그위의 서브층 보다 낮게 도핑되는 방법.
  9. 제1항에 있어서, 상기 증착동안에 반도체의 온도를 변화시키는 단계를 더 포함하고 있는 방법.
  10. 제1항에 있어서, 적어도 4개의 서브층(31,32,33,34)이 증착되는 방법.
  11. 실리콘을 포함하는 반응 가스의 분해에 의해 실리콘층을 증착하는 단계와 상기 실리콘충의 노출된 표면에 유전체 (35)를 형성하는 단계를 포함하는 반도체 장치를 만드는 방법에 있어서, 실리콘층을 증착하는 상기 단계가 실리콘의 증착 속도를 변화시켜 실현되고, 상기 변화는 실리콘을 포함하는 반응 가스의 부분압 및 실리콘을 포함하는 반응가스의 흐름속도로 이루어지는 그룹으로 부터 선택된 인자들중 적어도 하나를 변화시켜서 실현되며 이것에 의해 상기 반도체의 서브층(31,32,33,34)이 형성되고 상기 증착동안에 상기 실리콘 층내에 도펀트를 포함하는 단계와 적어도 하나의 다른 서브층과 비교할 때 상기 적어도 하나의 서브층내의 상기 도펀트의 농도를 변화시키는 단계를 더 포함하는 것을 특징으로 하는 방법.
  12. 제11항에 있어서, 상기 유전층이 실리콘 이산화물인 방법.
  13. 제11항에 있어서, 상기 도펀트가 인(phosphours)인 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920014891A 1991-08-26 1992-08-19 증착된 반도체상에 형성된 개선된 유전체 KR970009976B1 (ko)

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US74976591A 1991-08-26 1991-08-26
US749,765 1991-08-26

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KR970009976B1 KR970009976B1 (ko) 1997-06-19

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US (1) US5298436A (ko)
EP (1) EP0529951A3 (ko)
JP (1) JPH05206473A (ko)
KR (1) KR970009976B1 (ko)
SG (1) SG49595A1 (ko)

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JPH05206473A (ja) 1993-08-13
US5298436A (en) 1994-03-29
EP0529951A2 (en) 1993-03-03
SG49595A1 (en) 1998-06-15
EP0529951A3 (en) 1993-10-13
KR970009976B1 (ko) 1997-06-19

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