JPS5640284A - Preparation of semiconductor heterojunction element - Google Patents
Preparation of semiconductor heterojunction elementInfo
- Publication number
- JPS5640284A JPS5640284A JP11590679A JP11590679A JPS5640284A JP S5640284 A JPS5640284 A JP S5640284A JP 11590679 A JP11590679 A JP 11590679A JP 11590679 A JP11590679 A JP 11590679A JP S5640284 A JPS5640284 A JP S5640284A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- amorphous
- chamber
- silicon
- heterojunction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 4
- 239000004215 Carbon black (E152) Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- 229930195733 hydrocarbon Natural products 0.000 abstract 2
- 150000002430 hydrocarbons Chemical class 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 2
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 238000005036 potential barrier Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To permit the composition of a heterojunction between silicon and silicon carbide to be continuously changed when preparing an amorphous semiconductor heterojunction element, by using a silicon substrate as a target for sputtering and supplying a hydrocarbon gas. CONSTITUTION:A substrate 1 of such metal as Al or Mo, or Pt, which forms a potential barrier, or n type polycrystalline Si or n type monocrystalline Si, is coated with an amorphous Si layer 2, on which p type amorphous SiC is grown to form an amorphous heterojunction element having different forbidden band widths. For this, an electrode 6 on which a substrate 5 to be coated is mounted and an electrode 8 on which a Si substrate 7 to be a target are placed in a vacuum chamber 4 facing each other. After the inside of the chamber 4 is once made at 1-5X10<-6> Torr, an inert gas such as Ar and H2 or a hydrocarbon gas such as CH4 are supplied through a value 9, and a DC voltage is applied to the electrodes 6 and 8 to produce a plasma state in the chamber 4 for evaporation.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11590679A JPS5640284A (en) | 1979-09-10 | 1979-09-10 | Preparation of semiconductor heterojunction element |
| US06/132,406 US4329699A (en) | 1979-03-26 | 1980-03-21 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11590679A JPS5640284A (en) | 1979-09-10 | 1979-09-10 | Preparation of semiconductor heterojunction element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5640284A true JPS5640284A (en) | 1981-04-16 |
Family
ID=14674127
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11590679A Pending JPS5640284A (en) | 1979-03-26 | 1979-09-10 | Preparation of semiconductor heterojunction element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5640284A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59167075A (en) * | 1983-03-11 | 1984-09-20 | Canon Inc | Photosensor |
| JPS604273A (en) * | 1983-06-22 | 1985-01-10 | Toshiba Corp | Photoelectric conversion member |
| JPS604274A (en) * | 1983-06-22 | 1985-01-10 | Toshiba Corp | Photoelectric conversion member |
-
1979
- 1979-09-10 JP JP11590679A patent/JPS5640284A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59167075A (en) * | 1983-03-11 | 1984-09-20 | Canon Inc | Photosensor |
| JPS604273A (en) * | 1983-06-22 | 1985-01-10 | Toshiba Corp | Photoelectric conversion member |
| JPS604274A (en) * | 1983-06-22 | 1985-01-10 | Toshiba Corp | Photoelectric conversion member |
| JPH0473312B2 (en) * | 1983-06-22 | 1992-11-20 | Tokyo Shibaura Electric Co | |
| JPH0473311B2 (en) * | 1983-06-22 | 1992-11-20 | Tokyo Shibaura Electric Co |
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