KR960036155A - 피.엘.티. 박막 제조방법 - Google Patents

피.엘.티. 박막 제조방법 Download PDF

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KR960036155A
KR960036155A KR1019950004501A KR19950004501A KR960036155A KR 960036155 A KR960036155 A KR 960036155A KR 1019950004501 A KR1019950004501 A KR 1019950004501A KR 19950004501 A KR19950004501 A KR 19950004501A KR 960036155 A KR960036155 A KR 960036155A
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thin film
gas
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reaction chamber
temperature
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이승석
김호기
김종철
최수한
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김주용
현대전자산업 주식회사
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Priority to DE19549129A priority patent/DE19549129C2/de
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Priority to CN95119481A priority patent/CN1060224C/zh
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract

본 발명은 PLT 박막 제조방법에 관한 것으로, 실리콘산화막(111) 배향성 금속박막이 형성된 웨이퍼를 반응챔버에 장입시키고 상기 반응챔버를 고진공으로 유지하는 동시에 상기 반응챔버를 증착가능한 온도로 세팅시킨 다음, 소오스 운반가스를 일정량 유입시키고 희석 가스와 산화가스를 일정량 유입시키며 박막을 증착함으로써 전기적특성과 물리적특성이 우수한(100) 배향성 PLT 박막을 형성하여 반도체소자의 특성향상 및 반도체소자의 고집적화를 가능하게 하는 기술이다.

Description

피.엘.티. 박막 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1도는 본 발명의 실시예에서 사용되는 박막 증착장비 개략도.

Claims (26)

  1. 핫-월 방식을 이용한 반도체소자의 PLT 박막 제조방법에 있어서, (111) 배향성 금속박막을 형성하는 공정과, 상기 (111) 배향성 금속박막 상부에 (100) 배향성 PLT 박막을 형성하는 공정을 포함하는 PLT 박막 제조방법.
  2. 제 1항에 있어서, 상기 (111) 배향성 금속박막은 실리콘기판 상부에 실리콘산화막을 일정두께 형성하고 상기 실리콘산화막 상부에 형성되는 것을 특징으로 하는 PLT 박막 제조방법.
  3. 제 2항에 있어서, 상기 실리콘산화막은 900 내지 1100Å 두께로 형성되는 것을 특징으로 하는 PLT 박막 제조방법.
  4. 제 1항에 있어서, 상기 (111) 배향성 금속박막은 Pt로 형성되는 것을 특징으로 하는 PLT 박막 제조방법.
  5. 제 1항에 있어서, 상기 (111) 배향성 금속박막은 500 내지 4000Å 두께로 형성되는 것을 특징으로 하는 PLT 박막 제조방법.
  6. 제 1항에 있어서, 상기 (111) 배향성 금속박막은 반응챔버 내부압력 5×10-6Torr, 공정진행시 압력 8 내지 12mTorr, 전력 23 내지 27 와트(Watt), 기판온도 380 내지 420℃의 증착조건하에서 십분간 유지한 다음 스퍼터링공정으로 증착되는 것을 특징으로 하는 PLT 박막 제조방법.
  7. 제 1항에 있어서, 상기 (100) 배향성 PLT 박막은 반응챔버에 웨이퍼를 장입시키는 공정과, 상기 반응챔버를 고진공으로 유지하는 동시에 상기 반응챔버의 온도를 세팅시키는 공정과, 상기 반응챔버에 소오스물질 운반가스를 일정량 유입시키되, 가스분사기를 이용하여 유입시키는 공정과, 상기 반응챔버에 희석가스와 산화가스를 일정량 유입시키며 박막을 증착시키는 공정으로 형성되는 것을 특징으로 하는 PLT 박막 제조방법.
  8. 제 7항에 있어서, 상기 소오스물질은 증기압이 큰 물질로 사용되는 것을 특징으로 하는 PLT 박막 제조방법.
  9. 제 7항 또는 제 8항에 있어서, 상기 소오스물질은 Pb(dpm)3, La(dpm)3, TTIP 및 산소가스가 사용되는 것을 특징으로 하는 PLT 박막 제조방법.
  10. 제 9항에 있어서, 상기 소오스물질은 La(dpm)3, TTIP 및 산소가스가 사용되는 것을 특징으로 하는 PLT 박막 제조방법.
  11. 제 10항에 있어서, 상기 소오스물질을 이용한 증착공정은 PbTiO3박막이 증착되는 것을 특징으로 하는 PLT 박막 제조방법.
  12. 제 9항에 있어서, 상기 소오스물질은 Pb(dpm)3, La(dpm)3, Zr(dpm)3, TTIP, Zr-부트옥사이드 및 산소가스가 사용되는 것을 특징으로 하는 PLT 박막 제조방법.
  13. 제 12항에 있어서, 상기 소오스물질을 이용한 증착공정은 PLZT 박막이 증착되는 것을 특징으로 하는 PLT 박막 제조방법.
  14. 제 7항에 있어서, 상기 소오스물질이 담기는 증발기는 소오스물질에 따라 온도를 조절하되, 상기 소오스물질이 Pb이면 130 내지 180℃, 상기 소오스물질이 La이면 150 내지 250℃ 그리고 상기 소오스물질이 TTIP이면 20 내지 90℃의 온도로 유지되는 것을 특징으로 하는 PLT 박막 제조방법.
  15. 제 7항에 있어서, 상기 증발기의 반응챔버를 연결하는 가스유도관은 각 증발기 최고온도보다 20℃ 높게 온도조절되는 것을 특징으로 하는 PLT 제조방법.
  16. 제 7항에 있어서, 상기 웨이퍼는 상기 반응챔버의 균일한 온도영역 내에 위치시키며 증착되는 박막의 두께 및 조성의 균일도 확보를 위하여 90 내지 0도로 기울려 설치되는 것을 특징으로 하는 PLT 박막 제조방법.
  17. 제 7항에 있어서, 상기 고진공은 50mTorr 이하인 것을 특징으로 하는 PLT 박막 제조방법.
  18. 제 7항에 있어서, 상기 반응챔버의 온도는 증착온도인 400 내지 700℃로 세팅되는 것을 특징으로 하는 PLT 박막 제조방법.
  19. 제 7항에 있어서, 상기 운반가스는 아르곤이나 질소가스가 사용되는 것을 특징으로 하는 PLT 박막 제조방법.
  20. 제 19항에 있어서, 상기 운반가스 유량은 소오스물질에 따라 다르며 1 내지 300sccm인 것을 특징으로 하는 PLT 박막 제조방법.
  21. 제 7항에 있어서, 상기 가스분사기는 상기 소오스물질의 분해에 이온 산화반응을 억제시키기 위하여 200 내지 300℃로 유지되는 것을 특징으로 하는 PLT 박막 제조방법.
  22. 제 7항에 있어서, 상기 희석가스는 아르곤가스나 질소가스가 사용되는 것을 특징으로 하는 PLT 박막 제조방법.
  23. 제 22항에 있어서, 상기 희석가스의 유량범위는 0 내지 10 slpm인 것을 특징으로 하는 PLT 박막 제조방법.
  24. 제 7항에 있어서, 상기 산화가스는 산소가스나 오존가스가 사용되는 것을 특징으로 하는 PLT 박막 제조방법.
  25. 제 22항에 있어서, 상기 산화가스의 유량범위는 0 내지 10 slpm인 것을 특징으로 하는 PLT 박막 제조방법.
  26. 제 1항에 있어서, 상기 PLT 박막은 1000 내지 1800Å 두께로 증착되는 것을 특징으로 하는 PLT 박막 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950004501A 1995-03-06 1995-03-06 피.엘.티. 박막 제조방법 KR0179101B1 (ko)

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Application Number Priority Date Filing Date Title
KR1019950004501A KR0179101B1 (ko) 1995-03-06 1995-03-06 피.엘.티. 박막 제조방법
TW084114027A TW359045B (en) 1995-03-06 1995-12-28 Method for forming PLT thin film
JP7355047A JP2778941B2 (ja) 1995-03-06 1995-12-28 Ｐ．ｌ．ｔ．薄膜製造方法
DE19549129A DE19549129C2 (de) 1995-03-06 1995-12-29 Verfahren zur Ausbildung einer (100)-orientierten PLT Dünnschicht
GB9526698A GB2298736A (en) 1995-03-06 1995-12-29 Method for forming plt and plzt thin films
CN95119481A CN1060224C (zh) 1995-03-06 1995-12-29 钛酸镧铅薄膜的形成方法

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KR960015375B1 (ko) * 1994-06-08 1996-11-11 현대전자산업 주식회사 강유전체 박막 제조장치 및 그를 사용한 강유전체 박막 제조방법
DE19733053A1 (de) * 1997-07-31 1999-02-04 Leybold Ag Transparentes Substrat
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KR910005405Y1 (ko) * 1988-08-13 1991-07-25 다나신 덴기 가부시끼가이샤 디스크형 기록매체 로오딩 장치
JP2718414B2 (ja) * 1989-03-30 1998-02-25 マツダ株式会社 チタン酸鉛薄膜の製造方法
JPH04199745A (ja) * 1990-11-29 1992-07-20 Matsushita Electric Ind Co Ltd メモリ素子
JPH059738A (ja) * 1991-06-27 1993-01-19 Mitsubishi Electric Corp 強誘電性セラミツクス薄膜の製造方法
US5431958A (en) * 1992-03-09 1995-07-11 Sharp Kabushiki Kaisha Metalorganic chemical vapor deposition of ferroelectric thin films

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GB9526698D0 (en) 1996-02-28
KR0179101B1 (ko) 1999-03-20
JP2778941B2 (ja) 1998-07-23
GB2298736A (en) 1996-09-11
TW359045B (en) 1999-05-21
DE19549129C2 (de) 2001-10-31
JPH08283098A (ja) 1996-10-29
CN1060224C (zh) 2001-01-03
CN1133349A (zh) 1996-10-16

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