KR960030314A - 유기 실란을 이용한 이산화실리콘의 저온 침착 방법 - Google Patents

유기 실란을 이용한 이산화실리콘의 저온 침착 방법 Download PDF

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KR960030314A
KR960030314A KR1019960000045A KR19960000045A KR960030314A KR 960030314 A KR960030314 A KR 960030314A KR 1019960000045 A KR1019960000045 A KR 1019960000045A KR 19960000045 A KR19960000045 A KR 19960000045A KR 960030314 A KR960030314 A KR 960030314A
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silicon dioxide
hydrogen
feed material
containing feed
organosilane
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KR1019960000045A
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English (en)
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쿠마르 락스만 라비
케네쓰 호크버그 아더
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윌리엄 에프. 마쉬
에어 프로덕츠 앤드 케미칼스, 인코오포레이티드
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Publication of KR960030314A publication Critical patent/KR960030314A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31608—Deposition of SiO2
    • H01L21/31612—Deposition of SiO2 on a silicon body

Abstract

본 발명은 a) 약 50 내지 750mTorr 범위의 압력으로 유지시킨 전공하에서, 이산화실리콘을 침착시키기 위한 기재를 약 150 내지 500℃ 범위의 온도로 가열하는 단계; b) 하기 일반식을 갖는 하나 또는 그 이상의 화합물을 주성분으로 하는 유기 실란-함유 공급 물질, 및 산소-함유 공급 물질을 상기 진공중에 주입하는 단계; 및 c) 상기 온도와 진공을 유지시킴으로써, 이산화실리콘으로 이루어진 얇은 필름을 상기 기재상에 침착시키는 단계를 포함하여, 이산화실리콘을 극저온 화학 증착시키는 방법에 관한 것이다 :
상기 식중에서, R1및 R2는 각각 수소, C1내지 C6의 알킬, 알케닐, 알키닐, 또는 아릴이되, 단, 이 둘중 단지 하나는 수소일 수 있거나, 또는 이 둘은 알킬쇄 CX(R3)2(식중, R3은 각각 수소, CxH2x+1이고, x는 1 내지 6임)에 의해 결합될 수 있으며, R4는 각각 수소, CyH2y+1(식중, y는 1 내지 6임)이다.

Description

유기 실란을 이용한 이산화실리콘의 저온 침착 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 1, 2-비스(메틸실릴)에탄을 사용하여 본 발명의 방법에 따라서 제조한 전형적인 SiO2필름의 IR 스펙트럼(투과율 : 파장(cm-1))이다.

Claims (8)

  1. a) 약 50 내지 750mTorr 범위의 압력으로 유지시킨 진공하에서, 이산화실리콘을 침착시키기 위한 기재를 약 150 내지 500℃ 범위의 온도로 가열하는 단계; b) 하기 일반식을 갖는 하나 또는 그 이상의 화합물을 주성분으로 하는 유기 실란-함유 공급 물질, 및 산소-함유 공급 물질을 상기 진공중에 주입하는 단계; 및 c) 상기 온도와 진공을 유지시킴으로써, 이산화실리콘으로 이루어진 얇은 필름을 상기 기재상에 침착시키는 단계를 포함하여, 이산화실리콘을 극저온 화학 증착시키는 방법 :
    상기 식중에서, R1및 R2는 각각 수소, C1내지 C6의 알킬, 알케닐, 알키닐, 또는 아릴이되, 단, 이 둘중 단지 하나는 수소일 수 있거나, 또는 이 둘은 알킬쇄 CX(R3)2(식중, R3은 각각 수소, CxH2x+1이고, x는 1 내지 6임)에 의해 결합될 수 있으며, R4는 각각 수소, CyH2y+1(식중, y는 1 내지 6임)이다.
  2. 제1항에 있어서, 상기 산소-함유 공급 물질이 산소 기체, N2O, O3및 이들의 혼합물로 구성되는 군에서 선택되는 방법.
  3. 제1항에 있어서, 상기 산소-함유 공급 물질 대 유기 실란-함유 공급 물질의 비율이 0.5 : 1 내지 10 : 1인 방법.
  4. 제1항에 있어서, 상기 기재가 실리콘 웨이퍼인 방법.
  5. 제1항에 있어서, 상기 유기 실란이 1, 2-비스(메틸실릴) 에탄인 방법.
  6. 제1항에 있어서, 상기 유기 실란이 1-메틸실릴, 2-실릴 에탄인 방법.
  7. 제1항에 있어서, R1및 R2가 각각 C1내지 C6의 알킬, 알케닐, 알키닐, 또는 아릴이거나, 또는 이 둘은 알킬쇄 CX(R3)2(식중, R3은 각각 수소, CxH2x+1이고, x는 1 내지 6임)에 의해 결합될 수 있는 방법.
  8. a) 약 50 내지 750mTorr 범위의 압력으로 유지시킨 진공하에서, 이산화실리콘을 침착시키기 위한 기재를 약 150 내지 500℃범위의 온도로 가열하는 단계; b) 1, 2-비스(메틸실릴)에탄-함유 공급 물질 및 산소-함유 공급 물질을 상기 진공중에 주입하는 단계; 및 c) 상기 온도와 진공을 유지시킴으로써, 이산화실리콘으로 이루어진 얇은 필름을 상기 기재상에 침착시키는 단계를 포함하여, 이산화실리콘을 저온 화학 증착시키는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960000045A 1995-01-04 1996-01-04 유기 실란을 이용한 이산화실리콘의 저온 침착 방법 KR960030314A (ko)

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US36857195A 1995-01-04 1995-01-04
US08/368,571 1995-01-04

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US (1) US5744196A (ko)
EP (1) EP0721019A3 (ko)
JP (1) JP2769307B2 (ko)
KR (1) KR960030314A (ko)
IL (1) IL116620A0 (ko)
TW (1) TW285753B (ko)

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US5744196A (en) 1998-04-28
EP0721019A3 (en) 1997-07-02
JP2769307B2 (ja) 1998-06-25
JPH08274088A (ja) 1996-10-18
EP0721019A2 (en) 1996-07-10
TW285753B (ko) 1996-09-11
IL116620A0 (en) 1996-03-31

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