IL116620A0 - Process for low temperature deposition of silicon dioxide - Google Patents
Process for low temperature deposition of silicon dioxideInfo
- Publication number
- IL116620A0 IL116620A0 IL11662095A IL11662095A IL116620A0 IL 116620 A0 IL116620 A0 IL 116620A0 IL 11662095 A IL11662095 A IL 11662095A IL 11662095 A IL11662095 A IL 11662095A IL 116620 A0 IL116620 A0 IL 116620A0
- Authority
- IL
- Israel
- Prior art keywords
- low temperature
- silicon dioxide
- temperature deposition
- deposition
- dioxide
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title 2
- 230000008021 deposition Effects 0.000 title 1
- 235000012239 silicon dioxide Nutrition 0.000 title 1
- 239000000377 silicon dioxide Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31608—Deposition of SiO2
- H01L21/31612—Deposition of SiO2 on a silicon body
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US36857195A | 1995-01-04 | 1995-01-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
IL116620A0 true IL116620A0 (en) | 1996-03-31 |
Family
ID=23451807
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL11662095A IL116620A0 (en) | 1995-01-04 | 1995-12-29 | Process for low temperature deposition of silicon dioxide |
Country Status (6)
Country | Link |
---|---|
US (1) | US5744196A (xx) |
EP (1) | EP0721019A3 (xx) |
JP (1) | JP2769307B2 (xx) |
KR (1) | KR960030314A (xx) |
IL (1) | IL116620A0 (xx) |
TW (1) | TW285753B (xx) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
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EP0848083A3 (en) * | 1996-12-12 | 2001-03-07 | Eastman Kodak Company | Protective inorganic and dlc coatings and method for making same at or close to room temperature |
US5879775A (en) * | 1996-12-12 | 1999-03-09 | Eastman Kodak Compnay | Protective inorganic and DLC coatings for plastic media such as plastic cards |
US6413583B1 (en) | 1998-02-11 | 2002-07-02 | Applied Materials, Inc. | Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound |
US6287990B1 (en) | 1998-02-11 | 2001-09-11 | Applied Materials, Inc. | CVD plasma assisted low dielectric constant films |
US6340435B1 (en) | 1998-02-11 | 2002-01-22 | Applied Materials, Inc. | Integrated low K dielectrics and etch stops |
US6627532B1 (en) | 1998-02-11 | 2003-09-30 | Applied Materials, Inc. | Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition |
US6593247B1 (en) | 1998-02-11 | 2003-07-15 | Applied Materials, Inc. | Method of depositing low k films using an oxidizing plasma |
US6660656B2 (en) | 1998-02-11 | 2003-12-09 | Applied Materials Inc. | Plasma processes for depositing low dielectric constant films |
US6303523B2 (en) | 1998-02-11 | 2001-10-16 | Applied Materials, Inc. | Plasma processes for depositing low dielectric constant films |
US6054379A (en) * | 1998-02-11 | 2000-04-25 | Applied Materials, Inc. | Method of depositing a low k dielectric with organo silane |
US6159871A (en) | 1998-05-29 | 2000-12-12 | Dow Corning Corporation | Method for producing hydrogenated silicon oxycarbide films having low dielectric constant |
US6667553B2 (en) | 1998-05-29 | 2003-12-23 | Dow Corning Corporation | H:SiOC coated substrates |
US6147009A (en) | 1998-06-29 | 2000-11-14 | International Business Machines Corporation | Hydrogenated oxidized silicon carbon material |
US6800571B2 (en) | 1998-09-29 | 2004-10-05 | Applied Materials Inc. | CVD plasma assisted low dielectric constant films |
US6303047B1 (en) * | 1999-03-22 | 2001-10-16 | Lsi Logic Corporation | Low dielectric constant multiple carbon-containing silicon oxide dielectric material for use in integrated circuit structures, and method of making same |
DE69932409T2 (de) * | 1999-05-04 | 2007-01-04 | Applied Materials, Inc., Santa Clara | Thermisches CVD Verfahren zur Erzeugung eines mit Kohlenstoff dotierten Siliziumoxidfilms mit niedriger dielektrischer Konstante |
EP1050601A1 (en) * | 1999-05-04 | 2000-11-08 | Applied Materials, Inc. | Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film |
US6153261A (en) * | 1999-05-28 | 2000-11-28 | Applied Materials, Inc. | Dielectric film deposition employing a bistertiarybutylaminesilane precursor |
US6602806B1 (en) | 1999-08-17 | 2003-08-05 | Applied Materials, Inc. | Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film |
DE69940114D1 (de) | 1999-08-17 | 2009-01-29 | Applied Materials Inc | Oberflächenbehandlung von kohlenstoffdotierten SiO2-Filmen zur Erhöhung der Stabilität während der O2-Veraschung |
EP1077479A1 (en) | 1999-08-17 | 2001-02-21 | Applied Materials, Inc. | Post-deposition treatment to enchance properties of Si-O-C low K film |
JP3668075B2 (ja) * | 1999-10-12 | 2005-07-06 | 光夫 板倉 | 遺伝物質シーケンス決定用懸濁系、その懸濁系を用いた遺伝物質シーケンス決定方法およびその懸濁系を用いたSNPs高速スコアリング方法 |
US6399489B1 (en) | 1999-11-01 | 2002-06-04 | Applied Materials, Inc. | Barrier layer deposition using HDP-CVD |
US6947802B2 (en) * | 2000-04-10 | 2005-09-20 | Hypertherm, Inc. | Centralized control architecture for a laser materials processing system |
US6632478B2 (en) | 2001-02-22 | 2003-10-14 | Applied Materials, Inc. | Process for forming a low dielectric constant carbon-containing film |
US6709721B2 (en) | 2001-03-28 | 2004-03-23 | Applied Materials Inc. | Purge heater design and process development for the improvement of low k film properties |
US6762125B1 (en) * | 2001-05-14 | 2004-07-13 | Micron Technology, Inc. | Modified facet etch to prevent blown gate oxide and increase etch chamber life |
US6926926B2 (en) | 2001-09-10 | 2005-08-09 | Applied Materials, Inc. | Silicon carbide deposited by high density plasma chemical-vapor deposition with bias |
TW200424343A (en) * | 2002-09-05 | 2004-11-16 | Asml Us Inc | Low temperature deposition of silicon based thin films by single-wafer hot-wall rapid thermal chemical vapor deposition |
US7531679B2 (en) * | 2002-11-14 | 2009-05-12 | Advanced Technology Materials, Inc. | Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride |
US7446217B2 (en) * | 2002-11-14 | 2008-11-04 | Advanced Technology Materials, Inc. | Composition and method for low temperature deposition of silicon-containing films |
US7601860B2 (en) * | 2003-10-10 | 2009-10-13 | Advanced Technology Materials, Inc. | Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films |
US7579496B2 (en) | 2003-10-10 | 2009-08-25 | Advanced Technology Materials, Inc. | Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same |
US20050181633A1 (en) * | 2004-02-17 | 2005-08-18 | Hochberg Arthur K. | Precursors for depositing silicon-containing films and processes thereof |
US20060105581A1 (en) * | 2004-11-18 | 2006-05-18 | Bielefeld Jeffery D | Glycol doping agents in carbon doped oxide films |
FR2887252A1 (fr) * | 2005-06-21 | 2006-12-22 | Air Liquide | Procede de formation d'un film dielectrique et nouveaux precurseurs pour la mise en oeuvre de ce procede |
US7999355B2 (en) * | 2008-07-11 | 2011-08-16 | Air Products And Chemicals, Inc. | Aminosilanes for shallow trench isolation films |
JP2010067810A (ja) * | 2008-09-11 | 2010-03-25 | Shin-Etsu Chemical Co Ltd | Si含有膜の成膜方法、絶縁膜、並びに半導体デバイス |
US8703624B2 (en) * | 2009-03-13 | 2014-04-22 | Air Products And Chemicals, Inc. | Dielectric films comprising silicon and methods for making same |
KR101659463B1 (ko) | 2011-06-03 | 2016-09-23 | 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 | 탄소-도핑된 규소-함유 막을 증착시키기 위한 조성물 및 방법 |
US9443736B2 (en) | 2012-05-25 | 2016-09-13 | Entegris, Inc. | Silylene compositions and methods of use thereof |
US9243324B2 (en) | 2012-07-30 | 2016-01-26 | Air Products And Chemicals, Inc. | Methods of forming non-oxygen containing silicon-based films |
US9879340B2 (en) | 2014-11-03 | 2018-01-30 | Versum Materials Us, Llc | Silicon-based films and methods of forming the same |
DE102017120423A1 (de) * | 2017-09-05 | 2019-03-07 | Methode Electronics Malta Ltd. | Transparentes Polymer mit glasartigen Eigenschaften |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4900591A (en) * | 1988-01-20 | 1990-02-13 | The United States Of America As Represented By The Secretary Of The Air Force | Method for the deposition of high quality silicon dioxide at low temperature |
US4923716A (en) * | 1988-09-26 | 1990-05-08 | Hughes Aircraft Company | Chemical vapor desposition of silicon carbide |
US4981724A (en) * | 1988-10-27 | 1991-01-01 | Hochberg Arthur K | Deposition of silicon oxide films using alkylsilane liquid sources |
US5190890A (en) * | 1990-06-04 | 1993-03-02 | Advanced Technology Materials, Inc. | Wafer base for silicon carbide semiconductor devices, incorporating alloy substrates, and method of making the same |
US5204141A (en) * | 1991-09-18 | 1993-04-20 | Air Products And Chemicals, Inc. | Deposition of silicon dioxide films at temperatures as low as 100 degree c. by lpcvd using organodisilane sources |
DE4313130C1 (de) * | 1993-04-22 | 1994-05-26 | Goldschmidt Ag Th | Verfahren zur Herstellung von Silanen bzw. Organosiliciumhydriden durch Reduktion der entsprechenden Siliciumhalogenide bzw. Organosiliciumhalogenide |
US5492736A (en) * | 1994-11-28 | 1996-02-20 | Air Products And Chemicals, Inc. | Fluorine doped silicon oxide process |
-
1995
- 1995-11-09 TW TW084111893A patent/TW285753B/zh active
- 1995-12-29 JP JP7354280A patent/JP2769307B2/ja not_active Expired - Lifetime
- 1995-12-29 IL IL11662095A patent/IL116620A0/xx unknown
-
1996
- 1996-01-02 EP EP96100018A patent/EP0721019A3/en not_active Withdrawn
- 1996-01-04 KR KR1019960000045A patent/KR960030314A/ko not_active Application Discontinuation
- 1996-07-11 US US08/678,277 patent/US5744196A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5744196A (en) | 1998-04-28 |
EP0721019A3 (en) | 1997-07-02 |
JP2769307B2 (ja) | 1998-06-25 |
JPH08274088A (ja) | 1996-10-18 |
EP0721019A2 (en) | 1996-07-10 |
KR960030314A (ko) | 1996-08-17 |
TW285753B (xx) | 1996-09-11 |
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