ES2159057T3 - Procedimiento para la preparacion de una pelicula de oxido de aluminio utilizando alcoxido de dialquilaluminio. - Google Patents

Procedimiento para la preparacion de una pelicula de oxido de aluminio utilizando alcoxido de dialquilaluminio.

Info

Publication number
ES2159057T3
ES2159057T3 ES96940725T ES96940725T ES2159057T3 ES 2159057 T3 ES2159057 T3 ES 2159057T3 ES 96940725 T ES96940725 T ES 96940725T ES 96940725 T ES96940725 T ES 96940725T ES 2159057 T3 ES2159057 T3 ES 2159057T3
Authority
ES
Spain
Prior art keywords
dialquilaluminum
procedure
oxide film
aluminum oxide
alcoxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES96940725T
Other languages
English (en)
Inventor
Yun Soo Kim
Won Yong Koh
Su Jin Ku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Korea Research Institute of Chemical Technology KRICT
Original Assignee
Korea Research Institute of Chemical Technology KRICT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea Research Institute of Chemical Technology KRICT filed Critical Korea Research Institute of Chemical Technology KRICT
Application granted granted Critical
Publication of ES2159057T3 publication Critical patent/ES2159057T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)

Abstract

LA INVENCION SE REFIERE A UN PROCEDIMIENTO DE DEPOSITO ADECUADO Y ECONOMICO DE UNA PELICULA DE OXIDO DE ALUMINIO SOBRE UN SUSTRATO, QUE CONSISTE EN VAPORIZAR UN COMPUESTO DE ALCOXIDO DE DIALQUILALUMINIO A UNA TEMPERATURA QUE OSCILA ENTRE 0 Y 25 (GRADOS) C Y PONER EN CONTACTO EL VAPOR RESULTANTE CON DICHO SUSTRATO CALENTADO A UNA TEMPERATURA QUE OSCILA ENTRE 300 Y 600 (GRADOS) C.
ES96940725T 1995-12-04 1996-12-03 Procedimiento para la preparacion de una pelicula de oxido de aluminio utilizando alcoxido de dialquilaluminio. Expired - Lifetime ES2159057T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950046455A KR0164984B1 (ko) 1995-12-04 1995-12-04 화학증착에 의해 알킬산디알킬알루미늄으로부터 산화알루미늄막을 형성하는 방법

Publications (1)

Publication Number Publication Date
ES2159057T3 true ES2159057T3 (es) 2001-09-16

Family

ID=19437614

Family Applications (1)

Application Number Title Priority Date Filing Date
ES96940725T Expired - Lifetime ES2159057T3 (es) 1995-12-04 1996-12-03 Procedimiento para la preparacion de una pelicula de oxido de aluminio utilizando alcoxido de dialquilaluminio.

Country Status (8)

Country Link
US (1) US5922405A (es)
EP (1) EP0865514B1 (es)
JP (1) JP3148249B2 (es)
KR (1) KR0164984B1 (es)
AT (1) ATE201460T1 (es)
DE (1) DE69612997T2 (es)
ES (1) ES2159057T3 (es)
WO (1) WO1997020963A1 (es)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5912498A (en) * 1997-10-10 1999-06-15 Lucent Technologies Inc. Article comprising an oxide layer on GAN
KR100186949B1 (ko) * 1996-02-12 1999-05-15 재단법인 한국화학연구소 알킬알루미늄알킬산마그네슘과 그 제조 방법 및이를이용한알루민산마그네슘의합성
JP2001502381A (ja) * 1996-10-16 2001-02-20 ザ プレジデント アンド フェロウズ オブ ハーバード カレッジ 酸化アルミニウムの化学蒸着法
KR100254530B1 (ko) * 1997-08-12 2000-05-01 김충섭 2가 금속과 13족 금속의 알킬산알킬헤테로금속 화합물,이의 제조방법 및 이를 이용한 mm'2o4 형 복합 산화물 막의 제조방법
FI117942B (fi) * 1999-10-14 2007-04-30 Asm Int Menetelmä oksidiohutkalvojen kasvattamiseksi
JP4111756B2 (ja) 2002-06-20 2008-07-02 セントラル硝子株式会社 ３，３，３−トリフルオロ−２−ヒドロキシプロピオン酸およびその誘導体の製造方法
KR100480756B1 (ko) * 2002-08-02 2005-04-06 한국화학연구원 산화알루미늄 박막 제조 방법
US7160578B2 (en) 2004-03-10 2007-01-09 Pilkington North America Method for depositing aluminum oxide coatings on flat glass
CN100439293C (zh) * 2007-04-20 2008-12-03 江苏省陶瓷研究所有限公司 一种覆有纳米陶瓷过滤膜的多孔陶瓷过滤板及其制造方法
RU2430993C1 (ru) * 2010-07-01 2011-10-10 Российская Федерация, от имени которой выступает Министерство промышленности и торговли Российской Федерации (Минпромторг России) Способ нанесения коррозионно-стойкого покрытия оксида алюминия на металлическое изделие
US9718249B2 (en) 2012-11-16 2017-08-01 Apple Inc. Laminated aluminum oxide cover component
KR102123996B1 (ko) * 2013-02-25 2020-06-17 삼성전자주식회사 알루미늄 전구체, 이를 이용한 박막 형성 방법 및 커패시터 형성 방법
EP2778252A3 (en) 2013-03-15 2014-12-10 Apple Inc. Layered Coatings For Sapphire Structure
DE102013004559B4 (de) * 2013-03-18 2015-07-23 Apple Inc. Bruchstabile Saphirscheibe und Verfahren zu ihrer Herstellung
DE102013004558B4 (de) 2013-03-18 2018-04-05 Apple Inc. Verfahren zur Herstellung einer oberflächenverspannten Saphirscheibe, oberflächenverspannte Saphirscheibe und elektrisches Gerät mit einer transparenten Abdeckung
CN106086814A (zh) * 2016-06-17 2016-11-09 中山大学 一种玻璃面板镀膜层及其制备方法
RU2665498C1 (ru) * 2017-12-04 2018-08-30 Федеральное государственное бюджетное образовательное учреждение высшего образования Северо-Кавказский горно-металлургический институт (государственный технологический университет) (СКГМИ (ГТУ) Способ модификации фотонного кристалла на основе наноструктурированного пористого анодного оксида алюминия
US11269374B2 (en) 2019-09-11 2022-03-08 Apple Inc. Electronic device with a cover assembly having an adhesion layer
EP4493564A1 (en) * 2022-03-16 2025-01-22 Entegris, Inc. Process for preparing dialkyl aluminum alkoxides

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2202865A (en) * 1987-03-26 1988-10-05 Plessey Co Plc Thin film deposition process
DE3918932A1 (de) * 1989-06-08 1990-12-13 Schering Ag Verfahren zur herstellung duenner oxydschichten durch die plasma-umsetzung metallorganischer verbindungen
FI92897C (fi) * 1993-07-20 1995-01-10 Planar International Oy Ltd Menetelmä kerrosrakenteen valmistamiseksi elektroluminenssikomponentteja varten
US5389401A (en) * 1994-02-23 1995-02-14 Gordon; Roy G. Chemical vapor deposition of metal oxides

Also Published As

Publication number Publication date
ATE201460T1 (de) 2001-06-15
US5922405A (en) 1999-07-13
EP0865514B1 (en) 2001-05-23
JPH11500789A (ja) 1999-01-19
DE69612997T2 (de) 2001-09-20
DE69612997D1 (de) 2001-06-28
KR0164984B1 (ko) 1999-01-15
JP3148249B2 (ja) 2001-03-19
EP0865514A1 (en) 1998-09-23
WO1997020963A1 (en) 1997-06-12
KR970043358A (ko) 1997-07-26

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