DE69612997T2 - Verfahren zur herstellung von aluminiumoxidfilmen unter verwendung von dialkylaluminiumalkoxid - Google Patents
Verfahren zur herstellung von aluminiumoxidfilmen unter verwendung von dialkylaluminiumalkoxidInfo
- Publication number
- DE69612997T2 DE69612997T2 DE69612997T DE69612997T DE69612997T2 DE 69612997 T2 DE69612997 T2 DE 69612997T2 DE 69612997 T DE69612997 T DE 69612997T DE 69612997 T DE69612997 T DE 69612997T DE 69612997 T2 DE69612997 T2 DE 69612997T2
- Authority
- DE
- Germany
- Prior art keywords
- pct
- oxide films
- aluminum oxide
- date
- dialkyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950046455A KR0164984B1 (ko) | 1995-12-04 | 1995-12-04 | 화학증착에 의해 알킬산디알킬알루미늄으로부터 산화알루미늄막을 형성하는 방법 |
PCT/KR1996/000230 WO1997020963A1 (en) | 1995-12-04 | 1996-12-03 | Process for the preparation of aluminum oxide film using dialkylaluminum alkoxide |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69612997D1 DE69612997D1 (de) | 2001-06-28 |
DE69612997T2 true DE69612997T2 (de) | 2001-09-20 |
Family
ID=19437614
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69612997T Expired - Fee Related DE69612997T2 (de) | 1995-12-04 | 1996-12-03 | Verfahren zur herstellung von aluminiumoxidfilmen unter verwendung von dialkylaluminiumalkoxid |
Country Status (8)
Country | Link |
---|---|
US (1) | US5922405A (de) |
EP (1) | EP0865514B1 (de) |
JP (1) | JP3148249B2 (de) |
KR (1) | KR0164984B1 (de) |
AT (1) | ATE201460T1 (de) |
DE (1) | DE69612997T2 (de) |
ES (1) | ES2159057T3 (de) |
WO (1) | WO1997020963A1 (de) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013004558A1 (de) | 2013-03-18 | 2014-09-18 | Apple Inc. | Oberflächenverspannte Saphirscheibe |
DE102013004559A1 (de) * | 2013-03-18 | 2014-09-18 | Apple Inc. | Bruchstabile Saphirscheibe |
US9718249B2 (en) | 2012-11-16 | 2017-08-01 | Apple Inc. | Laminated aluminum oxide cover component |
US9745662B2 (en) | 2013-03-15 | 2017-08-29 | Apple Inc. | Layered coatings for sapphire substrate |
US11269374B2 (en) | 2019-09-11 | 2022-03-08 | Apple Inc. | Electronic device with a cover assembly having an adhesion layer |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5912498A (en) * | 1997-10-10 | 1999-06-15 | Lucent Technologies Inc. | Article comprising an oxide layer on GAN |
KR100186949B1 (ko) * | 1996-02-12 | 1999-05-15 | 재단법인 한국화학연구소 | 알킬알루미늄알킬산마그네슘과 그 제조 방법 및이를이용한알루민산마그네슘의합성 |
JP2001502381A (ja) * | 1996-10-16 | 2001-02-20 | ザ プレジデント アンド フェロウズ オブ ハーバード カレッジ | 酸化アルミニウムの化学蒸着法 |
KR100254530B1 (ko) * | 1997-08-12 | 2000-05-01 | 김충섭 | 2가 금속과 13족 금속의 알킬산알킬헤테로금속 화합물,이의 제조방법 및 이를 이용한 mm'2o4 형 복합 산화물 막의 제조방법 |
FI117942B (fi) * | 1999-10-14 | 2007-04-30 | Asm Int | Menetelmä oksidiohutkalvojen kasvattamiseksi |
JP4111756B2 (ja) | 2002-06-20 | 2008-07-02 | セントラル硝子株式会社 | 3,3,3−トリフルオロ−2−ヒドロキシプロピオン酸およびその誘導体の製造方法 |
KR100480756B1 (ko) * | 2002-08-02 | 2005-04-06 | 한국화학연구원 | 산화알루미늄 박막 제조 방법 |
US7160578B2 (en) | 2004-03-10 | 2007-01-09 | Pilkington North America | Method for depositing aluminum oxide coatings on flat glass |
CN100439293C (zh) * | 2007-04-20 | 2008-12-03 | 江苏省陶瓷研究所有限公司 | 一种覆有纳米陶瓷过滤膜的多孔陶瓷过滤板及其制造方法 |
KR102123996B1 (ko) * | 2013-02-25 | 2020-06-17 | 삼성전자주식회사 | 알루미늄 전구체, 이를 이용한 박막 형성 방법 및 커패시터 형성 방법 |
CN106086814A (zh) * | 2016-06-17 | 2016-11-09 | 中山大学 | 一种玻璃面板镀膜层及其制备方法 |
RU2665498C1 (ru) * | 2017-12-04 | 2018-08-30 | Федеральное государственное бюджетное образовательное учреждение высшего образования Северо-Кавказский горно-металлургический институт (государственный технологический университет) (СКГМИ (ГТУ) | Способ модификации фотонного кристалла на основе наноструктурированного пористого анодного оксида алюминия |
WO2023177696A1 (en) * | 2022-03-16 | 2023-09-21 | Entegris, Inc. | Process for preparing dialkyl aluminum alkoxides |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2202865A (en) * | 1987-03-26 | 1988-10-05 | Plessey Co Plc | Thin film deposition process |
DE3918932A1 (de) * | 1989-06-08 | 1990-12-13 | Schering Ag | Verfahren zur herstellung duenner oxydschichten durch die plasma-umsetzung metallorganischer verbindungen |
FI92897C (fi) * | 1993-07-20 | 1995-01-10 | Planar International Oy Ltd | Menetelmä kerrosrakenteen valmistamiseksi elektroluminenssikomponentteja varten |
US5389401A (en) * | 1994-02-23 | 1995-02-14 | Gordon; Roy G. | Chemical vapor deposition of metal oxides |
-
1995
- 1995-12-04 KR KR1019950046455A patent/KR0164984B1/ko not_active IP Right Cessation
-
1996
- 1996-12-03 AT AT96940725T patent/ATE201460T1/de not_active IP Right Cessation
- 1996-12-03 WO PCT/KR1996/000230 patent/WO1997020963A1/en active IP Right Grant
- 1996-12-03 US US09/077,450 patent/US5922405A/en not_active Expired - Fee Related
- 1996-12-03 ES ES96940725T patent/ES2159057T3/es not_active Expired - Lifetime
- 1996-12-03 DE DE69612997T patent/DE69612997T2/de not_active Expired - Fee Related
- 1996-12-03 JP JP52117597A patent/JP3148249B2/ja not_active Expired - Fee Related
- 1996-12-03 EP EP96940725A patent/EP0865514B1/de not_active Expired - Lifetime
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9718249B2 (en) | 2012-11-16 | 2017-08-01 | Apple Inc. | Laminated aluminum oxide cover component |
US9745662B2 (en) | 2013-03-15 | 2017-08-29 | Apple Inc. | Layered coatings for sapphire substrate |
DE102013004558A1 (de) | 2013-03-18 | 2014-09-18 | Apple Inc. | Oberflächenverspannte Saphirscheibe |
DE102013004559A1 (de) * | 2013-03-18 | 2014-09-18 | Apple Inc. | Bruchstabile Saphirscheibe |
DE102013004559B4 (de) * | 2013-03-18 | 2015-07-23 | Apple Inc. | Bruchstabile Saphirscheibe und Verfahren zu ihrer Herstellung |
US9617639B2 (en) | 2013-03-18 | 2017-04-11 | Apple Inc. | Surface-tensioned sapphire plate |
US9750150B2 (en) | 2013-03-18 | 2017-08-29 | Apple Inc. | Break resistant and shock resistant sapphire plate |
DE102013004558B4 (de) | 2013-03-18 | 2018-04-05 | Apple Inc. | Verfahren zur Herstellung einer oberflächenverspannten Saphirscheibe, oberflächenverspannte Saphirscheibe und elektrisches Gerät mit einer transparenten Abdeckung |
US11269374B2 (en) | 2019-09-11 | 2022-03-08 | Apple Inc. | Electronic device with a cover assembly having an adhesion layer |
Also Published As
Publication number | Publication date |
---|---|
JPH11500789A (ja) | 1999-01-19 |
DE69612997D1 (de) | 2001-06-28 |
EP0865514B1 (de) | 2001-05-23 |
EP0865514A1 (de) | 1998-09-23 |
KR970043358A (ko) | 1997-07-26 |
WO1997020963A1 (en) | 1997-06-12 |
JP3148249B2 (ja) | 2001-03-19 |
ES2159057T3 (es) | 2001-09-16 |
US5922405A (en) | 1999-07-13 |
ATE201460T1 (de) | 2001-06-15 |
KR0164984B1 (ko) | 1999-01-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69612997T2 (de) | Verfahren zur herstellung von aluminiumoxidfilmen unter verwendung von dialkylaluminiumalkoxid | |
DE60229077D1 (de) | Verfahren zur Herstellung einer dielektrischen Zwischenschicht unter Verwendung von Organosilikon-Vorläufern | |
DE59301222D1 (de) | Verfahren zur herstellung von organopolysiloxanharz | |
ATE162231T1 (de) | Verfahren zur herstellung einer gradientenschicht | |
DE69013007D1 (de) | Verfahren zur chemischen abscheidung aus der dampfphase von nitriden der übergangsmetalle. | |
KR950701046A (ko) | 적어도 하나의 분리된 베어링 시트를 가지는 부품의 생산방법(process for producing a component having at least one two-piece bearing seat) | |
DE69613437T2 (de) | Verfahren zur Herstellung einer Struktur mit einer mittels Anschlägen auf Abstand von einem Substrat gehaltenen Nutzschicht, sowie Verfahren zur Loslösung einer solchen Schicht | |
DE69210202D1 (de) | Verfahren zur Herstellung einer planen Diamantschicht mittels CVD | |
DE68917500D1 (de) | Verfahren zur Herstellung eines wesentlich aus Silizium und/oder anderen Gruppe IV-Elementen bestehenden Films mittels Mikrowellen-Plasma chemischer Dampfabscheidung. | |
FR2695943B1 (fr) | Procédé de dépôt en phase vapeur d'un film en verre fluoré sur un substrat. | |
DE69105023D1 (de) | Formteile aus Titan oder Titanlegierungen mit einer Nitridschicht und Verfahren zu ihrer Herstellung. | |
ATE138420T1 (de) | Verfahren zur herstellung von aufdampfmaterial für die herstellung mittelbrechender optischer schichten | |
DE69419425T2 (de) | Verfahren zur herstellung von siliziumkarbid-filmen unter verwendung von einzelnen siliziumorganischen verbindungen | |
ATA99092A (de) | Komprimierbares prepreg auf der basis von mit duromeren kunstharzen imprägnierten flächigen trägermaterialien, ein verfahren zu dessen herstellung sowie dessen verwendung | |
ATE393840T1 (de) | Verfahren zur temperaturgesteuerten dampfabscheidung auf einem substrat | |
DE59610050D1 (de) | Mit mehreren schichten beschichtete folien und verfahren zur deren herstellung | |
ATE174314T1 (de) | Vorbearbeitung von beschichteten glaesern vor ihrer thermischen behandlung | |
ATE286154T1 (de) | Verfahren und vorrichtung zur herstellung von hri-filmen | |
ATE125884T1 (de) | Verfahren zur herstellung von synthetischen diamantschichten auf substraten. | |
DE68909149D1 (de) | Verfahren zur kurzzeitigen Dehydratation von Para-Acetoxyphenylcarbinol. | |
DE59603295D1 (de) | Verfahren zur herstellung von dolastatin 15 und deren zwischenprodukten | |
ATE137811T1 (de) | Verfahren zur herstellung von dünnen ueberzügen aus anorganischen oxiden kontrollierter stöchiometrie | |
DE69736717D1 (de) | Verfahren zur herstellung einer halbleitervorrichtung | |
ATE234312T1 (de) | Eine ein zweiwertiges metall und ein metall der gruppe 13 enthaltende flüchtige organometallverbindung, verfahren zu deren herstellung und deren verwendung zur herstellung einer heterometalloxidschicht | |
ATE242776T1 (de) | Flüchtiges magnesium-alkylaluminiumalkoxid und dessen verwendung zur abscheidung einer magnesiumaluminatschicht |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |