DE69613437T2 - Verfahren zur Herstellung einer Struktur mit einer mittels Anschlägen auf Abstand von einem Substrat gehaltenen Nutzschicht, sowie Verfahren zur Loslösung einer solchen Schicht - Google Patents

Verfahren zur Herstellung einer Struktur mit einer mittels Anschlägen auf Abstand von einem Substrat gehaltenen Nutzschicht, sowie Verfahren zur Loslösung einer solchen Schicht

Info

Publication number
DE69613437T2
DE69613437T2 DE69613437T DE69613437T DE69613437T2 DE 69613437 T2 DE69613437 T2 DE 69613437T2 DE 69613437 T DE69613437 T DE 69613437T DE 69613437 T DE69613437 T DE 69613437T DE 69613437 T2 DE69613437 T2 DE 69613437T2
Authority
DE
Germany
Prior art keywords
layer
detaching
stops
producing
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69613437T
Other languages
English (en)
Other versions
DE69613437D1 (de
Inventor
Hubert Bono
France Michel
Patrice Rey
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of DE69613437D1 publication Critical patent/DE69613437D1/de
Application granted granted Critical
Publication of DE69613437T2 publication Critical patent/DE69613437T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
    • B81C1/0092—For avoiding stiction during the manufacturing process of the device, e.g. during wet etching
    • B81C1/00944—Maintaining a critical distance between the structures to be released
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
    • G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)
  • Drying Of Semiconductors (AREA)
  • Micromachines (AREA)
DE69613437T 1995-07-21 1996-07-19 Verfahren zur Herstellung einer Struktur mit einer mittels Anschlägen auf Abstand von einem Substrat gehaltenen Nutzschicht, sowie Verfahren zur Loslösung einer solchen Schicht Expired - Lifetime DE69613437T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9508882A FR2736934B1 (fr) 1995-07-21 1995-07-21 Procede de fabrication d'une structure avec une couche utile maintenue a distance d'un substrat par des butees, et de desolidarisation d'une telle couche

Publications (2)

Publication Number Publication Date
DE69613437D1 DE69613437D1 (de) 2001-07-26
DE69613437T2 true DE69613437T2 (de) 2002-05-02

Family

ID=9481249

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69613437T Expired - Lifetime DE69613437T2 (de) 1995-07-21 1996-07-19 Verfahren zur Herstellung einer Struktur mit einer mittels Anschlägen auf Abstand von einem Substrat gehaltenen Nutzschicht, sowie Verfahren zur Loslösung einer solchen Schicht

Country Status (5)

Country Link
US (1) US5750420A (de)
EP (1) EP0754953B1 (de)
JP (1) JP3884795B2 (de)
DE (1) DE69613437T2 (de)
FR (1) FR2736934B1 (de)

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DE4445177C5 (de) * 1994-11-22 2015-09-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung mikromechanischer Bauelemente mit freistehenden Mikrostrukturen
DE59607318D1 (de) * 1995-01-24 2001-08-23 Infineon Technologies Ag Mikromechanisches bauelement
US6035714A (en) * 1997-09-08 2000-03-14 The Regents Of The University Of Michigan Microelectromechanical capacitive accelerometer and method of making same
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
US6228275B1 (en) 1998-12-10 2001-05-08 Motorola, Inc. Method of manufacturing a sensor
DE69916782D1 (de) * 1999-02-26 2004-06-03 St Microelectronics Srl Verfahren zur Herstellung mechanischer, elektromechanischer und opto-elektromechanischer Mikrostrukturen mit aufgehängten Regionen welche während des Zusammenbaus mechanischen Spannungen ausgesetzt sind
US6242363B1 (en) * 1999-08-11 2001-06-05 Adc Telecommunications, Inc. Method of etching a wafer layer using a sacrificial wall to form vertical sidewall
US6229640B1 (en) 1999-08-11 2001-05-08 Adc Telecommunications, Inc. Microelectromechanical optical switch and method of manufacture thereof
US6316282B1 (en) 1999-08-11 2001-11-13 Adc Telecommunications, Inc. Method of etching a wafer layer using multiple layers of the same photoresistant material
US6437965B1 (en) * 2000-11-28 2002-08-20 Harris Corporation Electronic device including multiple capacitance value MEMS capacitor and associated methods
FR2823599B1 (fr) 2001-04-13 2004-12-17 Commissariat Energie Atomique Substrat demomtable a tenue mecanique controlee et procede de realisation
US6801682B2 (en) 2001-05-18 2004-10-05 Adc Telecommunications, Inc. Latching apparatus for a MEMS optical switch
WO2003055791A2 (en) * 2001-10-17 2003-07-10 Applied Materials, Inc. Improved etch process for etching microstructures
WO2003085254A1 (en) * 2002-04-04 2003-10-16 Illusion Technologies, Llc Miniature/micro scale power generation system
FR2848336B1 (fr) 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
US6916728B2 (en) * 2002-12-23 2005-07-12 Freescale Semiconductor, Inc. Method for forming a semiconductor structure through epitaxial growth
US7122395B2 (en) * 2002-12-23 2006-10-17 Motorola, Inc. Method of forming semiconductor devices through epitaxy
US6770506B2 (en) * 2002-12-23 2004-08-03 Motorola, Inc. Release etch method for micromachined sensors
FR2856844B1 (fr) 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
FR2857002B1 (fr) * 2003-07-04 2005-10-21 Commissariat Energie Atomique Procede de desolidarisation d'une couche utile et composant obtenu par ce procede
FR2857953B1 (fr) 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
US7087456B2 (en) * 2003-10-07 2006-08-08 Zyvex Corporation Stiction resistant release process
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
JP4559273B2 (ja) * 2005-03-30 2010-10-06 シチズンファインテックミヨタ株式会社 アクチュエータの製造方法
FR2889887B1 (fr) 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
FR2891281B1 (fr) 2005-09-28 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un element en couches minces.
US7939355B2 (en) * 2005-10-13 2011-05-10 The Regents Of The University Of California Single-mask fabrication process for linear and angular piezoresistive accelerometers
US7482192B2 (en) * 2006-05-16 2009-01-27 Honeywell International Inc. Method of making dimple structure for prevention of MEMS device stiction
US8084367B2 (en) * 2006-05-24 2011-12-27 Samsung Electronics Co., Ltd Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods
FR2910179B1 (fr) 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
FR2925221B1 (fr) 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
FR2925888A1 (fr) * 2007-12-27 2009-07-03 Commissariat Energie Atomique Dispositif a structure pre-liberee
FR2925889B1 (fr) 2007-12-27 2010-01-29 Commissariat Energie Atomique Procede de realisation d'un dispositif micromecanique et/ou nanomecanique a butees anti-collage
CN101590995B (zh) * 2008-05-27 2012-09-05 原相科技股份有限公司 同平面传感器
FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
FR2954505B1 (fr) 2009-12-22 2012-08-03 Commissariat Energie Atomique Structure micromecanique comportant une partie mobile presentant des butees pour des deplacements hors plan de la structure et son procede de realisation

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4930043A (en) * 1989-02-28 1990-05-29 United Technologies Closed-loop capacitive accelerometer with spring constraint
US4999735A (en) * 1990-03-08 1991-03-12 Allied-Signal Inc. Differential capacitive transducer and method of making
US5203731A (en) * 1990-07-18 1993-04-20 International Business Machines Corporation Process and structure of an integrated vacuum microelectronic device
US5397904A (en) * 1992-07-02 1995-03-14 Cornell Research Foundation, Inc. Transistor microstructure
US5258097A (en) * 1992-11-12 1993-11-02 Ford Motor Company Dry-release method for sacrificial layer microstructure fabrication
FR2700065B1 (fr) * 1992-12-28 1995-02-10 Commissariat Energie Atomique Procédé de fabrication d'accéléromètres utilisant la technologie silicium sur isolant.
DE4315012B4 (de) * 1993-05-06 2007-01-11 Robert Bosch Gmbh Verfahren zur Herstellung von Sensoren und Sensor
DE4317274A1 (de) * 1993-05-25 1994-12-01 Bosch Gmbh Robert Verfahren zur Herstellung oberflächen-mikromechanischer Strukturen

Also Published As

Publication number Publication date
US5750420A (en) 1998-05-12
DE69613437D1 (de) 2001-07-26
JP3884795B2 (ja) 2007-02-21
EP0754953A1 (de) 1997-01-22
FR2736934A1 (fr) 1997-01-24
JPH0936458A (ja) 1997-02-07
FR2736934B1 (fr) 1997-08-22
EP0754953B1 (de) 2001-06-20

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