WO2003043072A1 - Procede de gravure et appareil de gravure par plasma - Google Patents
Procede de gravure et appareil de gravure par plasma Download PDFInfo
- Publication number
- WO2003043072A1 WO2003043072A1 PCT/JP2002/011844 JP0211844W WO03043072A1 WO 2003043072 A1 WO2003043072 A1 WO 2003043072A1 JP 0211844 W JP0211844 W JP 0211844W WO 03043072 A1 WO03043072 A1 WO 03043072A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- etching
- frequency
- plasma
- lower electrode
- treatment
- Prior art date
Links
- 238000005530 etching Methods 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 2
- 238000001020 plasma etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003544806A JP4203996B2 (ja) | 2001-11-14 | 2002-11-13 | エッチング方法及びプラズマエッチング装置 |
US10/844,498 US20050103441A1 (en) | 2001-11-14 | 2004-05-13 | Etching method and plasma etching apparatus |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001-349289 | 2001-11-14 | ||
JP2001349289 | 2001-11-14 | ||
JP2002115087 | 2002-04-17 | ||
JP2002-115087 | 2002-04-17 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/844,498 Continuation US20050103441A1 (en) | 2001-11-14 | 2004-05-13 | Etching method and plasma etching apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003043072A1 true WO2003043072A1 (fr) | 2003-05-22 |
Family
ID=26624522
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2002/011844 WO2003043072A1 (fr) | 2001-11-14 | 2002-11-13 | Procede de gravure et appareil de gravure par plasma |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP4203996B2 (fr) |
TW (1) | TWI222132B (fr) |
WO (1) | WO2003043072A1 (fr) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007516622A (ja) * | 2003-12-23 | 2007-06-21 | ラム リサーチ コーポレーション | プラズマ処理システムにおける選択性の制御方法 |
JP2008193015A (ja) * | 2007-02-08 | 2008-08-21 | Tokyo Electron Ltd | プラズマエッチング方法、プラズマエッチング装置、制御プログラム及びコンピュータ記憶媒体 |
JP2008244144A (ja) * | 2007-03-27 | 2008-10-09 | Toshiba Corp | 半導体装置の製造方法 |
US8222155B2 (en) | 2004-06-29 | 2012-07-17 | Lam Research Corporation | Selectivity control in a plasma processing system |
CN107924837A (zh) * | 2015-08-12 | 2018-04-17 | 中央硝子株式会社 | 干式蚀刻方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6925202B2 (ja) * | 2017-08-30 | 2021-08-25 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0794482A (ja) * | 1993-09-24 | 1995-04-07 | Sumitomo Metal Ind Ltd | ドライエッチング方法 |
JP2000156370A (ja) * | 1998-09-16 | 2000-06-06 | Tokyo Electron Ltd | プラズマ処理方法 |
JP2001168088A (ja) * | 1999-10-26 | 2001-06-22 | Samsung Electronics Co Ltd | 半導体装置の絶縁膜エッチング方法 |
-
2002
- 2002-11-13 WO PCT/JP2002/011844 patent/WO2003043072A1/fr active Application Filing
- 2002-11-13 JP JP2003544806A patent/JP4203996B2/ja not_active Expired - Fee Related
- 2002-11-14 TW TW91133415A patent/TWI222132B/zh not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0794482A (ja) * | 1993-09-24 | 1995-04-07 | Sumitomo Metal Ind Ltd | ドライエッチング方法 |
JP2000156370A (ja) * | 1998-09-16 | 2000-06-06 | Tokyo Electron Ltd | プラズマ処理方法 |
JP2001168088A (ja) * | 1999-10-26 | 2001-06-22 | Samsung Electronics Co Ltd | 半導体装置の絶縁膜エッチング方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007516622A (ja) * | 2003-12-23 | 2007-06-21 | ラム リサーチ コーポレーション | プラズマ処理システムにおける選択性の制御方法 |
US8222155B2 (en) | 2004-06-29 | 2012-07-17 | Lam Research Corporation | Selectivity control in a plasma processing system |
JP2008193015A (ja) * | 2007-02-08 | 2008-08-21 | Tokyo Electron Ltd | プラズマエッチング方法、プラズマエッチング装置、制御プログラム及びコンピュータ記憶媒体 |
JP2008244144A (ja) * | 2007-03-27 | 2008-10-09 | Toshiba Corp | 半導体装置の製造方法 |
CN107924837A (zh) * | 2015-08-12 | 2018-04-17 | 中央硝子株式会社 | 干式蚀刻方法 |
CN107924837B (zh) * | 2015-08-12 | 2022-02-01 | 中央硝子株式会社 | 干式蚀刻方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4203996B2 (ja) | 2009-01-07 |
TWI222132B (en) | 2004-10-11 |
TW200300578A (en) | 2003-06-01 |
JPWO2003043072A1 (ja) | 2005-03-10 |
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