TW200746292A - Plasma etching method, and computer-readable recording medium - Google Patents

Plasma etching method, and computer-readable recording medium

Info

Publication number
TW200746292A
TW200746292A TW096106870A TW96106870A TW200746292A TW 200746292 A TW200746292 A TW 200746292A TW 096106870 A TW096106870 A TW 096106870A TW 96106870 A TW96106870 A TW 96106870A TW 200746292 A TW200746292 A TW 200746292A
Authority
TW
Taiwan
Prior art keywords
etching method
plasma
electrode
plasma etching
film
Prior art date
Application number
TW096106870A
Other languages
Chinese (zh)
Other versions
TWI406335B (en
Inventor
Shin Hirotsu
Wakako Naito
Takanori Suzuki
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200746292A publication Critical patent/TW200746292A/en
Application granted granted Critical
Publication of TWI406335B publication Critical patent/TWI406335B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

To provide a plasma etching method capable of controlling a CD distribution in the subsequent etching of a film to be etched by controlling the distribution of etching characteristics, because a plasma can be controlled within a wide range when an antireflection film is etched. The plasma etching method plasma-etches the antireflection film formed on a body to be treated W. The plasma etching method has a process for arranging the body to be treated successively forming a film to be etched, the antireflection film and a patterned photo-resist film on a substrate in a treating vessel 10 vertically fitting a first electrode 34 and a second electrode 16 on it oppositely. The plasma etching method further has the process for introducing a treating gas into the treating vessel 10, the process for generating the plasma by applying a high-frequency power to either of the first electrode 34 and the second electrode 16, and the process for applying a DC voltage to either electrode.
TW096106870A 2006-02-28 2007-02-27 A plasma etch method and a computer readable memory medium TWI406335B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006052894A JP2007234770A (en) 2006-02-28 2006-02-28 Plasma etching method, and computer-readable recording medium

Publications (2)

Publication Number Publication Date
TW200746292A true TW200746292A (en) 2007-12-16
TWI406335B TWI406335B (en) 2013-08-21

Family

ID=38555069

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096106870A TWI406335B (en) 2006-02-28 2007-02-27 A plasma etch method and a computer readable memory medium

Country Status (4)

Country Link
JP (1) JP2007234770A (en)
KR (1) KR100894345B1 (en)
CN (1) CN101030527A (en)
TW (1) TWI406335B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI471452B (en) * 2008-05-22 2015-02-01 Tokyo Electron Ltd A plasma processing apparatus, and a processing gas supply apparatus for use therewith
TWI484552B (en) * 2011-12-27 2015-05-11 Taiwan Semiconductor Mfg Co Ltd Plasma etching systems and methods of in-situ ashing photoresist
TWI508162B (en) * 2008-03-31 2015-11-11 Tokyo Electron Ltd Plasma processing methods and computer readable memory media

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5065787B2 (en) * 2007-07-27 2012-11-07 東京エレクトロン株式会社 Plasma etching method, plasma etching apparatus, and storage medium
US20090230089A1 (en) * 2008-03-13 2009-09-17 Kallol Bera Electrical control of plasma uniformity using external circuit
JP5213496B2 (en) * 2008-03-31 2013-06-19 東京エレクトロン株式会社 Plasma etching method and computer-readable storage medium
JP5221403B2 (en) * 2009-01-26 2013-06-26 東京エレクトロン株式会社 Plasma etching method, plasma etching apparatus and storage medium
US8232199B2 (en) 2010-07-01 2012-07-31 Samsung Electronics Co., Ltd. Method of fabricating semiconductor device comprises a photoresist pattern having a desired critical dimension
TWI502617B (en) * 2010-07-21 2015-10-01 應用材料股份有限公司 Method,plasma processing apparatus ,and liner assembly for tuning electrical skews
JP7066565B2 (en) * 2018-07-27 2022-05-13 東京エレクトロン株式会社 Plasma processing method and plasma processing equipment
JP7595431B2 (en) * 2020-07-21 2024-12-06 東京エレクトロン株式会社 Plasma processing method and plasma processing apparatus

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4831853B2 (en) * 1999-05-11 2011-12-07 東京エレクトロン株式会社 Capacitively coupled parallel plate plasma etching apparatus and plasma etching method using the same
US6364958B1 (en) * 2000-05-24 2002-04-02 Applied Materials, Inc. Plasma assisted semiconductor substrate processing chamber having a plurality of ground path bridges
US7179752B2 (en) * 2001-07-10 2007-02-20 Tokyo Electron Limited Dry etching method
JP4584565B2 (en) * 2002-11-26 2010-11-24 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
JP2004207286A (en) * 2002-12-24 2004-07-22 Sony Corp Dry etching method and semiconductor device manufacturing method
JP4722550B2 (en) * 2004-06-16 2011-07-13 東京エレクトロン株式会社 Manufacturing method of semiconductor device
US7740737B2 (en) * 2004-06-21 2010-06-22 Tokyo Electron Limited Plasma processing apparatus and method
WO2005124844A1 (en) * 2004-06-21 2005-12-29 Tokyo Electron Limited Plasma processing device amd method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI508162B (en) * 2008-03-31 2015-11-11 Tokyo Electron Ltd Plasma processing methods and computer readable memory media
TWI471452B (en) * 2008-05-22 2015-02-01 Tokyo Electron Ltd A plasma processing apparatus, and a processing gas supply apparatus for use therewith
TWI484552B (en) * 2011-12-27 2015-05-11 Taiwan Semiconductor Mfg Co Ltd Plasma etching systems and methods of in-situ ashing photoresist
US9786471B2 (en) 2011-12-27 2017-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. Plasma etcher design with effective no-damage in-situ ash

Also Published As

Publication number Publication date
KR20070089618A (en) 2007-08-31
KR100894345B1 (en) 2009-04-22
TWI406335B (en) 2013-08-21
JP2007234770A (en) 2007-09-13
CN101030527A (en) 2007-09-05

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees