TW200746292A - Plasma etching method, and computer-readable recording medium - Google Patents
Plasma etching method, and computer-readable recording mediumInfo
- Publication number
- TW200746292A TW200746292A TW096106870A TW96106870A TW200746292A TW 200746292 A TW200746292 A TW 200746292A TW 096106870 A TW096106870 A TW 096106870A TW 96106870 A TW96106870 A TW 96106870A TW 200746292 A TW200746292 A TW 200746292A
- Authority
- TW
- Taiwan
- Prior art keywords
- etching method
- plasma
- electrode
- plasma etching
- film
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
Abstract
To provide a plasma etching method capable of controlling a CD distribution in the subsequent etching of a film to be etched by controlling the distribution of etching characteristics, because a plasma can be controlled within a wide range when an antireflection film is etched. The plasma etching method plasma-etches the antireflection film formed on a body to be treated W. The plasma etching method has a process for arranging the body to be treated successively forming a film to be etched, the antireflection film and a patterned photo-resist film on a substrate in a treating vessel 10 vertically fitting a first electrode 34 and a second electrode 16 on it oppositely. The plasma etching method further has the process for introducing a treating gas into the treating vessel 10, the process for generating the plasma by applying a high-frequency power to either of the first electrode 34 and the second electrode 16, and the process for applying a DC voltage to either electrode.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006052894A JP2007234770A (en) | 2006-02-28 | 2006-02-28 | Plasma etching method, and computer-readable recording medium |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200746292A true TW200746292A (en) | 2007-12-16 |
TWI406335B TWI406335B (en) | 2013-08-21 |
Family
ID=38555069
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096106870A TWI406335B (en) | 2006-02-28 | 2007-02-27 | A plasma etch method and a computer readable memory medium |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2007234770A (en) |
KR (1) | KR100894345B1 (en) |
CN (1) | CN101030527A (en) |
TW (1) | TWI406335B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI471452B (en) * | 2008-05-22 | 2015-02-01 | Tokyo Electron Ltd | A plasma processing apparatus, and a processing gas supply apparatus for use therewith |
TWI484552B (en) * | 2011-12-27 | 2015-05-11 | Taiwan Semiconductor Mfg Co Ltd | Plasma etching systems and methods of in-situ ashing photoresist |
TWI508162B (en) * | 2008-03-31 | 2015-11-11 | Tokyo Electron Ltd | Plasma processing methods and computer readable memory media |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5065787B2 (en) * | 2007-07-27 | 2012-11-07 | 東京エレクトロン株式会社 | Plasma etching method, plasma etching apparatus, and storage medium |
US20090230089A1 (en) * | 2008-03-13 | 2009-09-17 | Kallol Bera | Electrical control of plasma uniformity using external circuit |
JP5213496B2 (en) * | 2008-03-31 | 2013-06-19 | 東京エレクトロン株式会社 | Plasma etching method and computer-readable storage medium |
JP5221403B2 (en) * | 2009-01-26 | 2013-06-26 | 東京エレクトロン株式会社 | Plasma etching method, plasma etching apparatus and storage medium |
US8232199B2 (en) | 2010-07-01 | 2012-07-31 | Samsung Electronics Co., Ltd. | Method of fabricating semiconductor device comprises a photoresist pattern having a desired critical dimension |
TWI502617B (en) | 2010-07-21 | 2015-10-01 | 應用材料股份有限公司 | Method,plasma processing apparatus ,and liner assembly for tuning electrical skews |
JP7066565B2 (en) * | 2018-07-27 | 2022-05-13 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing equipment |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4831853B2 (en) * | 1999-05-11 | 2011-12-07 | 東京エレクトロン株式会社 | Capacitively coupled parallel plate plasma etching apparatus and plasma etching method using the same |
US6364958B1 (en) * | 2000-05-24 | 2002-04-02 | Applied Materials, Inc. | Plasma assisted semiconductor substrate processing chamber having a plurality of ground path bridges |
CN1277293C (en) * | 2001-07-10 | 2006-09-27 | 东京毅力科创株式会社 | Dry etching method |
JP4584565B2 (en) * | 2002-11-26 | 2010-11-24 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
JP2004207286A (en) * | 2002-12-24 | 2004-07-22 | Sony Corp | Dry etching method and method of manufacturing semiconductor device |
JP4722550B2 (en) * | 2004-06-16 | 2011-07-13 | 東京エレクトロン株式会社 | Manufacturing method of semiconductor device |
KR101247857B1 (en) * | 2004-06-21 | 2013-03-26 | 도쿄엘렉트론가부시키가이샤 | Plasma processing device |
US7740737B2 (en) * | 2004-06-21 | 2010-06-22 | Tokyo Electron Limited | Plasma processing apparatus and method |
-
2006
- 2006-02-28 JP JP2006052894A patent/JP2007234770A/en active Pending
-
2007
- 2007-02-27 KR KR1020070019397A patent/KR100894345B1/en active IP Right Grant
- 2007-02-27 TW TW096106870A patent/TWI406335B/en active
- 2007-02-28 CN CNA200710084786XA patent/CN101030527A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI508162B (en) * | 2008-03-31 | 2015-11-11 | Tokyo Electron Ltd | Plasma processing methods and computer readable memory media |
TWI471452B (en) * | 2008-05-22 | 2015-02-01 | Tokyo Electron Ltd | A plasma processing apparatus, and a processing gas supply apparatus for use therewith |
TWI484552B (en) * | 2011-12-27 | 2015-05-11 | Taiwan Semiconductor Mfg Co Ltd | Plasma etching systems and methods of in-situ ashing photoresist |
US9786471B2 (en) | 2011-12-27 | 2017-10-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Plasma etcher design with effective no-damage in-situ ash |
Also Published As
Publication number | Publication date |
---|---|
CN101030527A (en) | 2007-09-05 |
KR100894345B1 (en) | 2009-04-22 |
KR20070089618A (en) | 2007-08-31 |
TWI406335B (en) | 2013-08-21 |
JP2007234770A (en) | 2007-09-13 |
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