WO2003043072A1 - Etching method and plasma etcher - Google Patents

Etching method and plasma etcher Download PDF

Info

Publication number
WO2003043072A1
WO2003043072A1 PCT/JP2002/011844 JP0211844W WO03043072A1 WO 2003043072 A1 WO2003043072 A1 WO 2003043072A1 JP 0211844 W JP0211844 W JP 0211844W WO 03043072 A1 WO03043072 A1 WO 03043072A1
Authority
WO
WIPO (PCT)
Prior art keywords
etching
frequency
plasma
lower electrode
treatment
Prior art date
Application number
PCT/JP2002/011844
Other languages
French (fr)
Japanese (ja)
Inventor
Masanobu Honda
Kazuya Nagaseki
Hanako Kida
Koichi Yatsuda
Youbun Ito
Koichiro Inazawa
Hisataka Hayashi
Original Assignee
Tokyo Electron Limited
Kabushiki Kaisha Toshiba
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited, Kabushiki Kaisha Toshiba filed Critical Tokyo Electron Limited
Priority to JP2003544806A priority Critical patent/JP4203996B2/en
Publication of WO2003043072A1 publication Critical patent/WO2003043072A1/en
Priority to US10/844,498 priority patent/US20050103441A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Abstract

A plasma etching method for setting a large etching ratio and forming a properly shaped hole, and a plasma etcher. For etching an etching target film (204) with a patterned organic film (202) as a mask, a treatment gas is introduced into a hermetic treatment container (104). A lower electrode (106) is provided with a high-frequency power source (122) of e.g. 40MHz and a high-frequency source (128) of 3.2MHz to impress two different high-frequency powers on the lower electrode. A suitable combination of the sizes of the high-frequency powers enables etching treatment by a low plasma electron density (Ne) and high self-bias voltage (Vdc).
PCT/JP2002/011844 2001-11-14 2002-11-13 Etching method and plasma etcher WO2003043072A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003544806A JP4203996B2 (en) 2001-11-14 2002-11-13 Etching method and plasma etching apparatus
US10/844,498 US20050103441A1 (en) 2001-11-14 2004-05-13 Etching method and plasma etching apparatus

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001-349289 2001-11-14
JP2001349289 2001-11-14
JP2002115087 2002-04-17
JP2002-115087 2002-04-17

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/844,498 Continuation US20050103441A1 (en) 2001-11-14 2004-05-13 Etching method and plasma etching apparatus

Publications (1)

Publication Number Publication Date
WO2003043072A1 true WO2003043072A1 (en) 2003-05-22

Family

ID=26624522

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/011844 WO2003043072A1 (en) 2001-11-14 2002-11-13 Etching method and plasma etcher

Country Status (3)

Country Link
JP (1) JP4203996B2 (en)
TW (1) TWI222132B (en)
WO (1) WO2003043072A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007516622A (en) * 2003-12-23 2007-06-21 ラム リサーチ コーポレーション Selectivity control method in plasma processing system
JP2008193015A (en) * 2007-02-08 2008-08-21 Tokyo Electron Ltd Plasma etching method, plasma etching apparatus, control program and computer-readable storage medium
JP2008244144A (en) * 2007-03-27 2008-10-09 Toshiba Corp Manufacturing method of semiconductor device
US8222155B2 (en) 2004-06-29 2012-07-17 Lam Research Corporation Selectivity control in a plasma processing system
CN107924837A (en) * 2015-08-12 2018-04-17 中央硝子株式会社 Dry etching method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6925202B2 (en) * 2017-08-30 2021-08-25 東京エレクトロン株式会社 Etching method and etching equipment

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794482A (en) * 1993-09-24 1995-04-07 Sumitomo Metal Ind Ltd Dry etching method
JP2000156370A (en) * 1998-09-16 2000-06-06 Tokyo Electron Ltd Method of plasma processing
JP2001168088A (en) * 1999-10-26 2001-06-22 Samsung Electronics Co Ltd Method of etching insulating film of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794482A (en) * 1993-09-24 1995-04-07 Sumitomo Metal Ind Ltd Dry etching method
JP2000156370A (en) * 1998-09-16 2000-06-06 Tokyo Electron Ltd Method of plasma processing
JP2001168088A (en) * 1999-10-26 2001-06-22 Samsung Electronics Co Ltd Method of etching insulating film of semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007516622A (en) * 2003-12-23 2007-06-21 ラム リサーチ コーポレーション Selectivity control method in plasma processing system
US8222155B2 (en) 2004-06-29 2012-07-17 Lam Research Corporation Selectivity control in a plasma processing system
JP2008193015A (en) * 2007-02-08 2008-08-21 Tokyo Electron Ltd Plasma etching method, plasma etching apparatus, control program and computer-readable storage medium
JP2008244144A (en) * 2007-03-27 2008-10-09 Toshiba Corp Manufacturing method of semiconductor device
CN107924837A (en) * 2015-08-12 2018-04-17 中央硝子株式会社 Dry etching method
CN107924837B (en) * 2015-08-12 2022-02-01 中央硝子株式会社 Dry etching method

Also Published As

Publication number Publication date
TW200300578A (en) 2003-06-01
JPWO2003043072A1 (en) 2005-03-10
JP4203996B2 (en) 2009-01-07
TWI222132B (en) 2004-10-11

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