DE602004027620D1 - Hf-pulsen eines kapazitiv gekoppelten narrow-gap-reaktors - Google Patents

Hf-pulsen eines kapazitiv gekoppelten narrow-gap-reaktors

Info

Publication number
DE602004027620D1
DE602004027620D1 DE602004027620T DE602004027620T DE602004027620D1 DE 602004027620 D1 DE602004027620 D1 DE 602004027620D1 DE 602004027620 T DE602004027620 T DE 602004027620T DE 602004027620 T DE602004027620 T DE 602004027620T DE 602004027620 D1 DE602004027620 D1 DE 602004027620D1
Authority
DE
Germany
Prior art keywords
pulses
electrode
process chamber
capacitively coupled
narrow gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004027620T
Other languages
English (en)
Inventor
Peter Loewenhardt
Mukund Srinivasan
Andreas Fischer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of DE602004027620D1 publication Critical patent/DE602004027620D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Magnetic Resonance Imaging Apparatus (AREA)
  • ing And Chemical Polishing (AREA)
DE602004027620T 2003-05-06 2004-04-29 Hf-pulsen eines kapazitiv gekoppelten narrow-gap-reaktors Expired - Lifetime DE602004027620D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/431,030 US7976673B2 (en) 2003-05-06 2003-05-06 RF pulsing of a narrow gap capacitively coupled reactor
PCT/US2004/013707 WO2004102638A2 (en) 2003-05-06 2004-04-29 Rf pulsing of a narrow gap capacitively coupled reactor

Publications (1)

Publication Number Publication Date
DE602004027620D1 true DE602004027620D1 (de) 2010-07-22

Family

ID=33416370

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004027620T Expired - Lifetime DE602004027620D1 (de) 2003-05-06 2004-04-29 Hf-pulsen eines kapazitiv gekoppelten narrow-gap-reaktors

Country Status (9)

Country Link
US (2) US7976673B2 (de)
EP (1) EP1620876B1 (de)
JP (1) JP4794449B2 (de)
KR (2) KR101303969B1 (de)
CN (1) CN1816893B (de)
AT (1) ATE470949T1 (de)
DE (1) DE602004027620D1 (de)
TW (1) TWI460784B (de)
WO (1) WO2004102638A2 (de)

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Also Published As

Publication number Publication date
US20110263130A1 (en) 2011-10-27
KR101303969B1 (ko) 2013-09-03
EP1620876B1 (de) 2010-06-09
TW200504870A (en) 2005-02-01
TWI460784B (zh) 2014-11-11
KR20060013386A (ko) 2006-02-09
US20040221958A1 (en) 2004-11-11
US7976673B2 (en) 2011-07-12
JP4794449B2 (ja) 2011-10-19
JP2007501530A (ja) 2007-01-25
EP1620876A2 (de) 2006-02-01
KR20120098951A (ko) 2012-09-05
WO2004102638A3 (en) 2005-07-28
CN1816893A (zh) 2006-08-09
WO2004102638A2 (en) 2004-11-25
CN1816893B (zh) 2012-09-19
ATE470949T1 (de) 2010-06-15
US8337713B2 (en) 2012-12-25

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