ATE470949T1 - Hf-pulsen eines kapazitiv gekoppelten narrow-gap- reaktors - Google Patents
Hf-pulsen eines kapazitiv gekoppelten narrow-gap- reaktorsInfo
- Publication number
- ATE470949T1 ATE470949T1 AT04751199T AT04751199T ATE470949T1 AT E470949 T1 ATE470949 T1 AT E470949T1 AT 04751199 T AT04751199 T AT 04751199T AT 04751199 T AT04751199 T AT 04751199T AT E470949 T1 ATE470949 T1 AT E470949T1
- Authority
- AT
- Austria
- Prior art keywords
- electrode
- pulse
- process chamber
- signal
- capacitive coupled
- Prior art date
Links
- 238000000034 method Methods 0.000 abstract 9
- 238000005530 etching Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Apparatus For Radiation Diagnosis (AREA)
- Magnetic Resonance Imaging Apparatus (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/431,030 US7976673B2 (en) | 2003-05-06 | 2003-05-06 | RF pulsing of a narrow gap capacitively coupled reactor |
PCT/US2004/013707 WO2004102638A2 (en) | 2003-05-06 | 2004-04-29 | Rf pulsing of a narrow gap capacitively coupled reactor |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE470949T1 true ATE470949T1 (de) | 2010-06-15 |
Family
ID=33416370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT04751199T ATE470949T1 (de) | 2003-05-06 | 2004-04-29 | Hf-pulsen eines kapazitiv gekoppelten narrow-gap- reaktors |
Country Status (9)
Country | Link |
---|---|
US (2) | US7976673B2 (de) |
EP (1) | EP1620876B1 (de) |
JP (1) | JP4794449B2 (de) |
KR (2) | KR101303969B1 (de) |
CN (1) | CN1816893B (de) |
AT (1) | ATE470949T1 (de) |
DE (1) | DE602004027620D1 (de) |
TW (1) | TWI460784B (de) |
WO (1) | WO2004102638A2 (de) |
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US6749945B2 (en) * | 2001-01-29 | 2004-06-15 | The Board Of Regents For Oklahoma State University | Advanced composite ormosil coatings |
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US7736914B2 (en) * | 2007-11-29 | 2010-06-15 | Applied Materials, Inc. | Plasma control using dual cathode frequency mixing and controlling the level of polymer formation |
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US8659335B2 (en) | 2009-06-25 | 2014-02-25 | Mks Instruments, Inc. | Method and system for controlling radio frequency power |
US20110011534A1 (en) * | 2009-07-17 | 2011-01-20 | Rajinder Dhindsa | Apparatus for adjusting an edge ring potential during substrate processing |
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US20130119018A1 (en) * | 2011-11-15 | 2013-05-16 | Keren Jacobs Kanarik | Hybrid pulsing plasma processing systems |
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JP2018038988A (ja) * | 2016-09-09 | 2018-03-15 | 株式会社島津製作所 | 粒子濃縮装置 |
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-
2003
- 2003-05-06 US US10/431,030 patent/US7976673B2/en not_active Expired - Fee Related
-
2004
- 2004-04-29 WO PCT/US2004/013707 patent/WO2004102638A2/en active Application Filing
- 2004-04-29 EP EP04751199A patent/EP1620876B1/de not_active Expired - Lifetime
- 2004-04-29 JP JP2006532543A patent/JP4794449B2/ja not_active Expired - Fee Related
- 2004-04-29 CN CN2004800191395A patent/CN1816893B/zh not_active Expired - Fee Related
- 2004-04-29 KR KR1020127020117A patent/KR101303969B1/ko active IP Right Grant
- 2004-04-29 AT AT04751199T patent/ATE470949T1/de not_active IP Right Cessation
- 2004-04-29 DE DE602004027620T patent/DE602004027620D1/de not_active Expired - Lifetime
- 2004-04-29 KR KR1020057021083A patent/KR20060013386A/ko active Application Filing
- 2004-05-04 TW TW093112507A patent/TWI460784B/zh active
-
2011
- 2011-07-07 US US13/177,627 patent/US8337713B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20110263130A1 (en) | 2011-10-27 |
KR101303969B1 (ko) | 2013-09-03 |
EP1620876B1 (de) | 2010-06-09 |
TW200504870A (en) | 2005-02-01 |
TWI460784B (zh) | 2014-11-11 |
KR20060013386A (ko) | 2006-02-09 |
US20040221958A1 (en) | 2004-11-11 |
US7976673B2 (en) | 2011-07-12 |
JP4794449B2 (ja) | 2011-10-19 |
JP2007501530A (ja) | 2007-01-25 |
EP1620876A2 (de) | 2006-02-01 |
KR20120098951A (ko) | 2012-09-05 |
WO2004102638A3 (en) | 2005-07-28 |
CN1816893A (zh) | 2006-08-09 |
WO2004102638A2 (en) | 2004-11-25 |
CN1816893B (zh) | 2012-09-19 |
DE602004027620D1 (de) | 2010-07-22 |
US8337713B2 (en) | 2012-12-25 |
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Legal Events
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---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |