ATE420221T1 - Verfahren und vorrichtung zur abscheidung einer mikrokristallinen siliciumschicht auf einem substrat - Google Patents

Verfahren und vorrichtung zur abscheidung einer mikrokristallinen siliciumschicht auf einem substrat

Info

Publication number
ATE420221T1
ATE420221T1 AT02722981T AT02722981T ATE420221T1 AT E420221 T1 ATE420221 T1 AT E420221T1 AT 02722981 T AT02722981 T AT 02722981T AT 02722981 T AT02722981 T AT 02722981T AT E420221 T1 ATE420221 T1 AT E420221T1
Authority
AT
Austria
Prior art keywords
substrate
depositing
silicon layer
microcrystalline silicon
fluid
Prior art date
Application number
AT02722981T
Other languages
English (en)
Inventor
Edward Hamers
Arno Smets
De Sanden Mauritius Van
Daniel Schram
Original Assignee
Univ Eindhoven Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Eindhoven Tech filed Critical Univ Eindhoven Tech
Application granted granted Critical
Publication of ATE420221T1 publication Critical patent/ATE420221T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
  • Laminated Bodies (AREA)
  • Physical Vapour Deposition (AREA)
AT02722981T 2001-04-16 2002-04-12 Verfahren und vorrichtung zur abscheidung einer mikrokristallinen siliciumschicht auf einem substrat ATE420221T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL1017849A NL1017849C2 (nl) 2001-04-16 2001-04-16 Werkwijze en inrichting voor het deponeren van een althans ten dele kristallijne siliciumlaag op een substraat.

Publications (1)

Publication Number Publication Date
ATE420221T1 true ATE420221T1 (de) 2009-01-15

Family

ID=19773241

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02722981T ATE420221T1 (de) 2001-04-16 2002-04-12 Verfahren und vorrichtung zur abscheidung einer mikrokristallinen siliciumschicht auf einem substrat

Country Status (17)

Country Link
US (1) US7160809B2 (de)
EP (1) EP1381710B1 (de)
KR (1) KR100758921B1 (de)
CN (1) CN1279211C (de)
AT (1) ATE420221T1 (de)
AU (1) AU2002253725B2 (de)
BR (1) BR0208601A (de)
CA (1) CA2442575C (de)
CY (1) CY1108949T1 (de)
DE (1) DE60230732D1 (de)
ES (1) ES2321165T3 (de)
MX (1) MXPA03008426A (de)
NL (1) NL1017849C2 (de)
PT (1) PT1381710E (de)
RU (1) RU2258764C1 (de)
WO (1) WO2002083979A2 (de)
ZA (1) ZA200307301B (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7821637B1 (en) 2007-02-22 2010-10-26 J.A. Woollam Co., Inc. System for controlling intensity of a beam of electromagnetic radiation and method for investigating materials with low specular reflectance and/or are depolarizing
AU2009236677B2 (en) * 2008-04-14 2012-11-22 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material and an electrode for use therein
EP2141259B1 (de) * 2008-07-04 2018-10-31 ABB Schweiz AG Abscheidungsverfahren zur Passivierung von Silizium-Wafern
US7927984B2 (en) * 2008-11-05 2011-04-19 Hemlock Semiconductor Corporation Silicon production with a fluidized bed reactor utilizing tetrachlorosilane to reduce wall deposition
US20120213929A1 (en) * 2011-02-18 2012-08-23 Tokyo Electron Limited Method of operating filament assisted chemical vapor deposition system
US10011920B2 (en) * 2011-02-23 2018-07-03 International Business Machines Corporation Low-temperature selective epitaxial growth of silicon for device integration
KR101923167B1 (ko) * 2011-04-07 2018-11-29 피코순 오와이 플라즈마 소오스를 갖는 원자층 퇴적
JP6110106B2 (ja) * 2012-11-13 2017-04-05 Ｊｓｗアフティ株式会社 薄膜形成装置
KR102105070B1 (ko) 2012-11-23 2020-04-27 피코순 오와이 Ald 반응기 내에서의 기판 로딩
RU2650381C1 (ru) * 2016-12-12 2018-04-11 федеральное государственное бюджетное образовательное учреждение высшего образования "Омский государственный университет им. Ф.М. Достоевского" Способ формирования тонких пленок аморфного кремния
RU2733941C2 (ru) * 2019-04-01 2020-10-08 Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) Способ изготовления полупроводниковой структуры

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60257130A (ja) * 1984-06-01 1985-12-18 Res Dev Corp Of Japan ラジカルビ−ムを用いた薄膜形成方法
JPS60194065A (ja) * 1984-11-09 1985-10-02 Hitachi Ltd 分子線堆積方法
DE3784537T2 (de) * 1986-04-11 1993-09-30 Canon Kk Herstellungsverfahren einer niedergeschlagenen Schicht.
NL8701530A (nl) * 1987-06-30 1989-01-16 Stichting Fund Ond Material Werkwijze voor het behandelen van oppervlakken van substraten met behulp van een plasma en reactor voor het uitvoeren van die werkwijze.
CN1269196C (zh) * 1994-06-15 2006-08-09 精工爱普生株式会社 薄膜半导体器件的制造方法
US6152071A (en) * 1996-12-11 2000-11-28 Canon Kabushiki Kaisha High-frequency introducing means, plasma treatment apparatus, and plasma treatment method
EP1208002A4 (de) * 1999-06-03 2006-08-02 Penn State Res Found Dünnschicht-abgeschieden leersäule-netzwerksmaterialien

Also Published As

Publication number Publication date
RU2258764C1 (ru) 2005-08-20
CY1108949T1 (el) 2014-07-02
CA2442575C (en) 2011-07-19
ES2321165T3 (es) 2009-06-03
DE60230732D1 (de) 2009-02-26
CN1279211C (zh) 2006-10-11
US7160809B2 (en) 2007-01-09
RU2003133288A (ru) 2005-05-10
PT1381710E (pt) 2009-04-15
WO2002083979A3 (en) 2003-04-24
BR0208601A (pt) 2004-03-23
MXPA03008426A (es) 2004-11-12
EP1381710A2 (de) 2004-01-21
WO2002083979A2 (en) 2002-10-24
KR20030092060A (ko) 2003-12-03
CN1503857A (zh) 2004-06-09
EP1381710B1 (de) 2009-01-07
US20040097056A1 (en) 2004-05-20
AU2002253725B2 (en) 2006-10-05
CA2442575A1 (en) 2002-10-24
ZA200307301B (en) 2004-05-21
KR100758921B1 (ko) 2007-09-14
NL1017849C2 (nl) 2002-10-30

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