BR0208601A - Processo e dispositivo para depositar uma camada de silìcio, pelo menos parcialmente cristalina, em um substrato - Google Patents

Processo e dispositivo para depositar uma camada de silìcio, pelo menos parcialmente cristalina, em um substrato

Info

Publication number
BR0208601A
BR0208601A BR0208601-8A BR0208601A BR0208601A BR 0208601 A BR0208601 A BR 0208601A BR 0208601 A BR0208601 A BR 0208601A BR 0208601 A BR0208601 A BR 0208601A
Authority
BR
Brazil
Prior art keywords
substrate
crystalline silicon
depositing
layer
partially crystalline
Prior art date
Application number
BR0208601-8A
Other languages
English (en)
Inventor
Edward Aloys Gerard Hamers
Arno Hendrikus Marie Smets
Mauritius Cornelius Mar Sanden
Daniel Cornelis Schram
Original Assignee
Univ Eindhoven Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Eindhoven Tech filed Critical Univ Eindhoven Tech
Publication of BR0208601A publication Critical patent/BR0208601A/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
  • Laminated Bodies (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

"PROCESSO E DISPOSITIVO PARA DEPOSITAR UMA CAMADA DE SILìCIO, PELO MENOS PARCIALMENTE CRISTALINA, EM UM SUBSTRATO". Em um processo e dispositivo para depositar uma camada de silício, pelo menos parcialmente cristalina, é gerado um plasma e um substrato (24) é exposto, sob a influência do plasma, a um fluido fonte contendo silício, para deposição nele de silicio. Uma queda de pressão é aplicada entre um local (12), onde o fluido fonte é suprido, e o substrato (24). Além do fluido fonte, um fluido auxiliar é também injetado, que é capaz de atacar os átomos de silício não-cristalinos. O substrato (24) é exposto tanto ao fluido fonte como ao fluido auxiliar.
BR0208601-8A 2001-04-16 2002-04-12 Processo e dispositivo para depositar uma camada de silìcio, pelo menos parcialmente cristalina, em um substrato BR0208601A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL1017849A NL1017849C2 (nl) 2001-04-16 2001-04-16 Werkwijze en inrichting voor het deponeren van een althans ten dele kristallijne siliciumlaag op een substraat.
PCT/NL2002/000244 WO2002083979A2 (en) 2001-04-16 2002-04-12 Process and device for the deposition of an at least partially crystalline silicium layer on a substrate

Publications (1)

Publication Number Publication Date
BR0208601A true BR0208601A (pt) 2004-03-23

Family

ID=19773241

Family Applications (1)

Application Number Title Priority Date Filing Date
BR0208601-8A BR0208601A (pt) 2001-04-16 2002-04-12 Processo e dispositivo para depositar uma camada de silìcio, pelo menos parcialmente cristalina, em um substrato

Country Status (17)

Country Link
US (1) US7160809B2 (pt)
EP (1) EP1381710B1 (pt)
KR (1) KR100758921B1 (pt)
CN (1) CN1279211C (pt)
AT (1) ATE420221T1 (pt)
AU (1) AU2002253725B2 (pt)
BR (1) BR0208601A (pt)
CA (1) CA2442575C (pt)
CY (1) CY1108949T1 (pt)
DE (1) DE60230732D1 (pt)
ES (1) ES2321165T3 (pt)
MX (1) MXPA03008426A (pt)
NL (1) NL1017849C2 (pt)
PT (1) PT1381710E (pt)
RU (1) RU2258764C1 (pt)
WO (1) WO2002083979A2 (pt)
ZA (1) ZA200307301B (pt)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7821637B1 (en) 2007-02-22 2010-10-26 J.A. Woollam Co., Inc. System for controlling intensity of a beam of electromagnetic radiation and method for investigating materials with low specular reflectance and/or are depolarizing
CA2721192A1 (en) * 2008-04-14 2009-10-22 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material and an electrode for use therein
EP2141259B1 (en) * 2008-07-04 2018-10-31 ABB Schweiz AG Deposition method for passivation of silicon wafers
US7927984B2 (en) * 2008-11-05 2011-04-19 Hemlock Semiconductor Corporation Silicon production with a fluidized bed reactor utilizing tetrachlorosilane to reduce wall deposition
US20120213929A1 (en) * 2011-02-18 2012-08-23 Tokyo Electron Limited Method of operating filament assisted chemical vapor deposition system
US10011920B2 (en) 2011-02-23 2018-07-03 International Business Machines Corporation Low-temperature selective epitaxial growth of silicon for device integration
KR102111702B1 (ko) 2011-04-07 2020-05-15 피코순 오와이 플라즈마 소오스를 갖는 원자층 퇴적
JP6110106B2 (ja) * 2012-11-13 2017-04-05 Ｊｓｗアフティ株式会社 薄膜形成装置
KR102227176B1 (ko) * 2012-11-23 2021-03-12 피코순 오와이 Ald 반응기 내에서의 기판 로딩
RU2650381C1 (ru) * 2016-12-12 2018-04-11 федеральное государственное бюджетное образовательное учреждение высшего образования "Омский государственный университет им. Ф.М. Достоевского" Способ формирования тонких пленок аморфного кремния
RU2733941C2 (ru) * 2019-04-01 2020-10-08 Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) Способ изготовления полупроводниковой структуры

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60257130A (ja) * 1984-06-01 1985-12-18 Res Dev Corp Of Japan ラジカルビ−ムを用いた薄膜形成方法
JPS60194065A (ja) * 1984-11-09 1985-10-02 Hitachi Ltd 分子線堆積方法
EP0241317B1 (en) * 1986-04-11 1993-03-10 Canon Kabushiki Kaisha Process for forming deposited film
NL8701530A (nl) * 1987-06-30 1989-01-16 Stichting Fund Ond Material Werkwijze voor het behandelen van oppervlakken van substraten met behulp van een plasma en reactor voor het uitvoeren van die werkwijze.
KR100327086B1 (ko) * 1994-06-15 2002-03-06 구사마 사부로 박막 반도체 장치의 제조방법, 박막 반도체 장치,액정표시장치 및 전자기기
US6152071A (en) * 1996-12-11 2000-11-28 Canon Kabushiki Kaisha High-frequency introducing means, plasma treatment apparatus, and plasma treatment method
WO2000074932A1 (en) * 1999-06-03 2000-12-14 The Penn State Research Foundation Deposited thin film void-column network materials

Also Published As

Publication number Publication date
MXPA03008426A (es) 2004-11-12
EP1381710B1 (en) 2009-01-07
US7160809B2 (en) 2007-01-09
AU2002253725B2 (en) 2006-10-05
CA2442575A1 (en) 2002-10-24
RU2003133288A (ru) 2005-05-10
WO2002083979A2 (en) 2002-10-24
CN1279211C (zh) 2006-10-11
KR100758921B1 (ko) 2007-09-14
NL1017849C2 (nl) 2002-10-30
CA2442575C (en) 2011-07-19
DE60230732D1 (de) 2009-02-26
ATE420221T1 (de) 2009-01-15
ES2321165T3 (es) 2009-06-03
ZA200307301B (en) 2004-05-21
KR20030092060A (ko) 2003-12-03
US20040097056A1 (en) 2004-05-20
WO2002083979A3 (en) 2003-04-24
PT1381710E (pt) 2009-04-15
EP1381710A2 (en) 2004-01-21
CY1108949T1 (el) 2014-07-02
CN1503857A (zh) 2004-06-09
RU2258764C1 (ru) 2005-08-20

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Legal Events

Date Code Title Description
B07A Application suspended after technical examination (opinion) [chapter 7.1 patent gazette]
B06A Patent application procedure suspended [chapter 6.1 patent gazette]
B06A Patent application procedure suspended [chapter 6.1 patent gazette]
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 11A ANUIDADE

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 2224 DE 20/08/2013.