ATE400891T1 - Verfahren zur ausbildung einer silizium- epitaxialschicht - Google Patents

Verfahren zur ausbildung einer silizium- epitaxialschicht

Info

Publication number
ATE400891T1
ATE400891T1 AT03717542T AT03717542T ATE400891T1 AT E400891 T1 ATE400891 T1 AT E400891T1 AT 03717542 T AT03717542 T AT 03717542T AT 03717542 T AT03717542 T AT 03717542T AT E400891 T1 ATE400891 T1 AT E400891T1
Authority
AT
Austria
Prior art keywords
process chamber
epitaxial layer
silicon epitaxial
treatment step
gas
Prior art date
Application number
AT03717542T
Other languages
English (en)
Inventor
Akitake Tamura
Satoshi Oka
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of ATE400891T1 publication Critical patent/ATE400891T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
AT03717542T 2002-04-17 2003-04-09 Verfahren zur ausbildung einer silizium- epitaxialschicht ATE400891T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002114804A JP4215447B2 (ja) 2002-04-17 2002-04-17 シリコンエピタキシャルウェーハの製造方法

Publications (1)

Publication Number Publication Date
ATE400891T1 true ATE400891T1 (de) 2008-07-15

Family

ID=29243398

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03717542T ATE400891T1 (de) 2002-04-17 2003-04-09 Verfahren zur ausbildung einer silizium- epitaxialschicht

Country Status (6)

Country Link
US (1) US7008881B2 (de)
EP (1) EP1498938B1 (de)
JP (1) JP4215447B2 (de)
AT (1) ATE400891T1 (de)
DE (1) DE60322042D1 (de)
WO (1) WO2003088332A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI264758B (en) * 2004-03-11 2006-10-21 Hitachi Int Electric Inc A substrate processing apparatus and a semiconductor device manufacturing method use the same
US8466049B2 (en) * 2005-07-29 2013-06-18 Hitachi Kokusai Electric Inc. Semiconductor device producing method with selective epitaxial growth
US20080072820A1 (en) * 2006-06-30 2008-03-27 Applied Materials, Inc. Modular cvd epi 300mm reactor
JP2009135333A (ja) * 2007-11-30 2009-06-18 Sumitomo Electric Ind Ltd 半導体発光素子の製造方法
US7871937B2 (en) * 2008-05-16 2011-01-18 Asm America, Inc. Process and apparatus for treating wafers
WO2012102755A1 (en) * 2011-01-28 2012-08-02 Applied Materials, Inc. Carbon addition for low resistivity in situ doped silicon epitaxy
JP6260485B2 (ja) * 2014-07-29 2018-01-17 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
JP6327094B2 (ja) 2014-10-02 2018-05-23 株式会社Sumco 気相成長装置の汚染管理方法、エピタキシャルシリコンウェーハの製造方法
US10043666B2 (en) * 2016-02-26 2018-08-07 Applied Materials, Inc. Method for inter-chamber process

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US22351A (en) * 1858-12-21 Improvement in preserve-cans
US6008126A (en) 1992-04-08 1999-12-28 Elm Technology Corporation Membrane dielectric isolation IC fabrication
JPH08236462A (ja) * 1995-03-01 1996-09-13 Shin Etsu Handotai Co Ltd 気相成長方法
JP3298467B2 (ja) * 1997-07-18 2002-07-02 信越半導体株式会社 エピタキシャルウェーハの製造方法
JP3292101B2 (ja) * 1997-07-18 2002-06-17 信越半導体株式会社 珪素単結晶基板表面の平滑化方法
JP4726272B2 (ja) * 1998-06-16 2011-07-20 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 エピタキシャルウェハの製造方法
US6346732B1 (en) * 1999-05-14 2002-02-12 Kabushiki Kaisha Toshiba Semiconductor device with oxide mediated epitaxial layer
DE19960823B4 (de) * 1999-12-16 2007-04-12 Siltronic Ag Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe und deren Verwendung
DE10025871A1 (de) * 2000-05-25 2001-12-06 Wacker Siltronic Halbleitermat Epitaxierte Halbleiterscheibe und Verfahren zu ihrer Herstellung
JP2002008994A (ja) * 2000-06-22 2002-01-11 Ulvac Japan Ltd 薄膜製造方法

Also Published As

Publication number Publication date
EP1498938B1 (de) 2008-07-09
DE60322042D1 (de) 2008-08-21
EP1498938A1 (de) 2005-01-19
WO2003088332A1 (fr) 2003-10-23
EP1498938A4 (de) 2007-10-03
JP4215447B2 (ja) 2009-01-28
US7008881B2 (en) 2006-03-07
US20040175959A1 (en) 2004-09-09
JP2003309070A (ja) 2003-10-31

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Legal Events

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