JP2009135333A - 半導体発光素子の製造方法 - Google Patents
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- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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- H01S5/34373—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)AsP
Abstract
【解決手段】半導体レーザ素子1の製造方法では、SiH4を熱分解して得られるSi原子41を予め吸着させることにより、埋込層13の初期成長において、半導体基板11の一面及び半導体メサ部12の側面に、高不純物濃度のSiドープInPによる拡散防止層31を形成する。この結果、埋込層13の成長の際、上部クラッド層23から拡散するZnが拡散防止層31によってトラップされ、ZnとFeとの相互拡散が抑制される。一方、拡散防止層31は、結晶成長を用いて形成する場合とは異なり、数モノレイヤの薄さで一様に形成されるので、拡散防止層31自体が電流リークパスとなることも抑制される。
【選択図】図1
Description
Claims (3)
- 半導体基板の一面側において、第1導電型クラッド層、活性層、及びZnドープの第2導電型クラッド層を含む化合物半導体層を成長させる工程と、
所定のマスクを用いて前記化合物半導体層をエッチングし、前記半導体基板上に半導体メサ部を形成する工程と、
ホスフィン雰囲気下でシラン系原料を含むガスを供給し、前記半導体基板の一面及び前記半導体メサ部の側面に、前記シラン系ガスを熱分解して得られるSi原子を吸着させる工程と、
前記ホスフィン雰囲気下でインジウム系原料を含むガスを供給し、前記Si原子を内部に取り込ませることにより、前記半導体基板の一面及び前記半導体メサ部の側面に、SiドープInP層を形成する工程と、
前記インジウム系原料を含むガスを引き続き供給し、前記半導体基板の一面に前記半導体メサ部を埋め込むFeドープInP層を成長させる工程とを備えたことを特徴とする半導体発光素子の製造方法。 - 前記シラン系ガスの熱分解を600℃〜700℃の温度で行うことを特徴とする請求項1記載の半導体発光素子の製造方法。
- 前記SiドープInP層の表面にノンドープInP層を所定の厚さで成長させた後、Fe系原料を含むガスを供給して前記FeドープInP層を成長させることを特徴とする請求項1又は2記載の半導体発光素子の製造方法。
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JP2007311412A JP2009135333A (ja) | 2007-11-30 | 2007-11-30 | 半導体発光素子の製造方法 |
US12/292,538 US7772023B2 (en) | 2007-11-30 | 2008-11-20 | Method of producing semiconductor optical device |
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JP2007311412A JP2009135333A (ja) | 2007-11-30 | 2007-11-30 | 半導体発光素子の製造方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2011249767A (ja) * | 2010-04-27 | 2011-12-08 | Sumitomo Electric Device Innovations Inc | 光半導体装置の製造方法 |
Families Citing this family (3)
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JP2008294076A (ja) * | 2007-05-22 | 2008-12-04 | Sumitomo Electric Ind Ltd | 半導体レーザ素子 |
CN107394018B (zh) * | 2017-08-10 | 2019-01-04 | 湘能华磊光电股份有限公司 | 一种led外延生长方法 |
CN111785614B (zh) * | 2020-06-18 | 2022-04-12 | 上海空间电源研究所 | 一种降低电压损耗的键合结构及其制备方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05182907A (ja) * | 1991-12-28 | 1993-07-23 | Sony Corp | 化合物半導体の成長方法 |
JPH05283813A (ja) * | 1992-03-31 | 1993-10-29 | Toshiba Corp | 半導体装置の製造方法 |
JPH05291686A (ja) * | 1992-04-14 | 1993-11-05 | Matsushita Electric Ind Co Ltd | 半導体レーザ |
JPH09214045A (ja) * | 1996-01-30 | 1997-08-15 | Fujitsu Ltd | 半導体レーザ及びその製造方法 |
JPH10294526A (ja) * | 1997-04-17 | 1998-11-04 | Hitachi Ltd | 半導体装置の製造方法及び半導体装置 |
JPH11121874A (ja) * | 1997-10-21 | 1999-04-30 | Sony Corp | 半導体発光素子およびその製造方法 |
JP2003309070A (ja) * | 2002-04-17 | 2003-10-31 | Shin Etsu Handotai Co Ltd | シリコンエピタキシャルウェーハの製造方法 |
JP2005209909A (ja) * | 2004-01-23 | 2005-08-04 | Nippon Telegr & Teleph Corp <Ntt> | 半導体光素子及びその製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3386302B2 (ja) * | 1995-12-20 | 2003-03-17 | 三菱電機株式会社 | 化合物半導体へのn型ドーピング方法およびこれを用いた化学ビーム堆積方法並びにこれらの結晶成長方法によって形成された化合物半導体結晶およびこの化合物半導体結晶によって構成された電子デバイスおよび光デバイス |
US6556605B1 (en) * | 2000-02-29 | 2003-04-29 | Triquent Technology Holding, Co. | Method and device for preventing zinc/iron interaction in a semiconductor laser |
JP3654435B2 (ja) | 2001-08-21 | 2005-06-02 | 日本電信電話株式会社 | 半導体光素子及びその製造方法 |
EP1359614A1 (en) * | 2002-05-02 | 2003-11-05 | Agilent Technologies, Inc. - a Delaware corporation - | Semiconductor substrates and structures with an oxide layer |
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- 2007-11-30 JP JP2007311412A patent/JP2009135333A/ja active Pending
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05182907A (ja) * | 1991-12-28 | 1993-07-23 | Sony Corp | 化合物半導体の成長方法 |
JPH05283813A (ja) * | 1992-03-31 | 1993-10-29 | Toshiba Corp | 半導体装置の製造方法 |
JPH05291686A (ja) * | 1992-04-14 | 1993-11-05 | Matsushita Electric Ind Co Ltd | 半導体レーザ |
JPH09214045A (ja) * | 1996-01-30 | 1997-08-15 | Fujitsu Ltd | 半導体レーザ及びその製造方法 |
JPH10294526A (ja) * | 1997-04-17 | 1998-11-04 | Hitachi Ltd | 半導体装置の製造方法及び半導体装置 |
JPH11121874A (ja) * | 1997-10-21 | 1999-04-30 | Sony Corp | 半導体発光素子およびその製造方法 |
JP2003309070A (ja) * | 2002-04-17 | 2003-10-31 | Shin Etsu Handotai Co Ltd | シリコンエピタキシャルウェーハの製造方法 |
JP2005209909A (ja) * | 2004-01-23 | 2005-08-04 | Nippon Telegr & Teleph Corp <Ntt> | 半導体光素子及びその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011249767A (ja) * | 2010-04-27 | 2011-12-08 | Sumitomo Electric Device Innovations Inc | 光半導体装置の製造方法 |
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US7772023B2 (en) | 2010-08-10 |
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