DE60322042D1 - Verfahren zur ausbildung einer silizium-epitaxialschicht - Google Patents

Verfahren zur ausbildung einer silizium-epitaxialschicht

Info

Publication number
DE60322042D1
DE60322042D1 DE60322042T DE60322042T DE60322042D1 DE 60322042 D1 DE60322042 D1 DE 60322042D1 DE 60322042 T DE60322042 T DE 60322042T DE 60322042 T DE60322042 T DE 60322042T DE 60322042 D1 DE60322042 D1 DE 60322042D1
Authority
DE
Germany
Prior art keywords
process chamber
epitaxial layer
silicon epitaxial
treatment step
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60322042T
Other languages
English (en)
Inventor
Akitake Tamura
Satoshi Oka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of DE60322042D1 publication Critical patent/DE60322042D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
DE60322042T 2002-04-17 2003-04-09 Verfahren zur ausbildung einer silizium-epitaxialschicht Expired - Lifetime DE60322042D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002114804A JP4215447B2 (ja) 2002-04-17 2002-04-17 シリコンエピタキシャルウェーハの製造方法
PCT/JP2003/004501 WO2003088332A1 (fr) 2002-04-17 2003-04-09 Procede de formation d'une couche epitaxiale de silicium

Publications (1)

Publication Number Publication Date
DE60322042D1 true DE60322042D1 (de) 2008-08-21

Family

ID=29243398

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60322042T Expired - Lifetime DE60322042D1 (de) 2002-04-17 2003-04-09 Verfahren zur ausbildung einer silizium-epitaxialschicht

Country Status (6)

Country Link
US (1) US7008881B2 (de)
EP (1) EP1498938B1 (de)
JP (1) JP4215447B2 (de)
AT (1) ATE400891T1 (de)
DE (1) DE60322042D1 (de)
WO (1) WO2003088332A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI264758B (en) * 2004-03-11 2006-10-21 Hitachi Int Electric Inc A substrate processing apparatus and a semiconductor device manufacturing method use the same
JP4635051B2 (ja) * 2005-07-29 2011-02-16 株式会社日立国際電気 半導体装置の製造方法および基板処理装置
US20080072820A1 (en) * 2006-06-30 2008-03-27 Applied Materials, Inc. Modular cvd epi 300mm reactor
JP2009135333A (ja) * 2007-11-30 2009-06-18 Sumitomo Electric Ind Ltd 半導体発光素子の製造方法
US7871937B2 (en) * 2008-05-16 2011-01-18 Asm America, Inc. Process and apparatus for treating wafers
WO2012102755A1 (en) * 2011-01-28 2012-08-02 Applied Materials, Inc. Carbon addition for low resistivity in situ doped silicon epitaxy
JP6260485B2 (ja) * 2014-07-29 2018-01-17 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
JP6327094B2 (ja) * 2014-10-02 2018-05-23 株式会社Sumco 気相成長装置の汚染管理方法、エピタキシャルシリコンウェーハの製造方法
US10043666B2 (en) * 2016-02-26 2018-08-07 Applied Materials, Inc. Method for inter-chamber process

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US22351A (en) * 1858-12-21 Improvement in preserve-cans
US6008126A (en) 1992-04-08 1999-12-28 Elm Technology Corporation Membrane dielectric isolation IC fabrication
JPH08236462A (ja) * 1995-03-01 1996-09-13 Shin Etsu Handotai Co Ltd 気相成長方法
JP3298467B2 (ja) * 1997-07-18 2002-07-02 信越半導体株式会社 エピタキシャルウェーハの製造方法
JP3292101B2 (ja) * 1997-07-18 2002-06-17 信越半導体株式会社 珪素単結晶基板表面の平滑化方法
JP4726272B2 (ja) * 1998-06-16 2011-07-20 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 エピタキシャルウェハの製造方法
US6346732B1 (en) * 1999-05-14 2002-02-12 Kabushiki Kaisha Toshiba Semiconductor device with oxide mediated epitaxial layer
DE19960823B4 (de) * 1999-12-16 2007-04-12 Siltronic Ag Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe und deren Verwendung
DE10025871A1 (de) * 2000-05-25 2001-12-06 Wacker Siltronic Halbleitermat Epitaxierte Halbleiterscheibe und Verfahren zu ihrer Herstellung
JP2002008994A (ja) * 2000-06-22 2002-01-11 Ulvac Japan Ltd 薄膜製造方法

Also Published As

Publication number Publication date
US20040175959A1 (en) 2004-09-09
EP1498938A1 (de) 2005-01-19
ATE400891T1 (de) 2008-07-15
JP2003309070A (ja) 2003-10-31
JP4215447B2 (ja) 2009-01-28
US7008881B2 (en) 2006-03-07
EP1498938B1 (de) 2008-07-09
EP1498938A4 (de) 2007-10-03
WO2003088332A1 (fr) 2003-10-23

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