ATE341099T1 - Verfahren zur anisotropen ätzung von substraten - Google Patents

Verfahren zur anisotropen ätzung von substraten

Info

Publication number
ATE341099T1
ATE341099T1 AT00400462T AT00400462T ATE341099T1 AT E341099 T1 ATE341099 T1 AT E341099T1 AT 00400462 T AT00400462 T AT 00400462T AT 00400462 T AT00400462 T AT 00400462T AT E341099 T1 ATE341099 T1 AT E341099T1
Authority
AT
Austria
Prior art keywords
substrate
etching
excitation power
mixed gas
gas
Prior art date
Application number
AT00400462T
Other languages
English (en)
Inventor
Tamarak Pandhumsoporn
Kevin Yu
Michael Feldbaum
Michel Puech
Original Assignee
Cit Alcatel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cit Alcatel filed Critical Cit Alcatel
Application granted granted Critical
Publication of ATE341099T1 publication Critical patent/ATE341099T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
AT00400462T 1999-04-21 2000-02-21 Verfahren zur anisotropen ätzung von substraten ATE341099T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/295,100 US6383938B2 (en) 1999-04-21 1999-04-21 Method of anisotropic etching of substrates

Publications (1)

Publication Number Publication Date
ATE341099T1 true ATE341099T1 (de) 2006-10-15

Family

ID=23136218

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00400462T ATE341099T1 (de) 1999-04-21 2000-02-21 Verfahren zur anisotropen ätzung von substraten

Country Status (5)

Country Link
US (1) US6383938B2 (de)
EP (1) EP1047122B1 (de)
JP (1) JP4601113B2 (de)
AT (1) ATE341099T1 (de)
DE (1) DE60030905T2 (de)

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US20040077178A1 (en) * 2002-10-17 2004-04-22 Applied Materials, Inc. Method for laterally etching a semiconductor structure
JP4065213B2 (ja) * 2003-03-25 2008-03-19 住友精密工業株式会社 シリコン基板のエッチング方法及びエッチング装置
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DE10345402B4 (de) * 2003-09-30 2005-10-13 Infineon Technologies Ag Verfahren zur Bearbeitung einer Halbleiterstruktur mit einer Vertiefung
EP1793418B1 (de) * 2004-07-02 2013-06-12 Ulvac, Inc. Ätzverfahren und -system
US7183215B2 (en) * 2004-07-21 2007-02-27 Hewlett-Packard Development Company, L.P. Etching with electrostatically attracted ions
FR2880469B1 (fr) * 2005-01-03 2007-04-27 Cit Alcatel Dispositif de fabrication d'un masque par gravure par plasma d'un substrat semiconducteur
US20060168794A1 (en) * 2005-01-28 2006-08-03 Hitachi Global Storage Technologies Method to control mask profile for read sensor definition
DE102005031602A1 (de) * 2005-07-06 2007-01-11 Robert Bosch Gmbh Reaktor zur Durchführung eines Ätzverfahrens für einen Stapel von maskierten Wafern und Ätzverfahren
WO2007031778A1 (en) * 2005-09-16 2007-03-22 Aviza Technology Limited A method of etching a feature in a silicone substrate
US8071481B2 (en) * 2009-04-23 2011-12-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming highly strained source/drain trenches
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JP5537324B2 (ja) * 2010-08-05 2014-07-02 株式会社東芝 半導体装置の製造方法
JP5845754B2 (ja) * 2010-09-15 2016-01-20 東京エレクトロン株式会社 プラズマエッチング処理方法
US9318341B2 (en) * 2010-12-20 2016-04-19 Applied Materials, Inc. Methods for etching a substrate
KR101251072B1 (ko) * 2011-07-12 2013-04-12 에이피티씨 주식회사 반도체소자의 식각방법
CN103159163B (zh) * 2011-12-19 2016-06-08 北京北方微电子基地设备工艺研究中心有限责任公司 基片刻蚀方法及基片处理设备
CN104134611B (zh) * 2013-05-03 2017-09-29 无锡华润上华半导体有限公司 硅释放工艺
JP2015032597A (ja) * 2013-07-31 2015-02-16 日本ゼオン株式会社 プラズマエッチング方法
KR102170856B1 (ko) 2014-02-19 2020-10-29 삼성전자주식회사 반도체 장치 및 그 제조 방법
US9978606B2 (en) * 2015-10-02 2018-05-22 Applied Materials, Inc. Methods for atomic level resolution and plasma processing control
CN106653594B (zh) * 2015-10-30 2019-05-28 中微半导体设备(上海)股份有限公司 一种在高宽比硅刻蚀中用于提高侧壁刻蚀效果的方法
US9691625B2 (en) * 2015-11-04 2017-06-27 Lam Research Corporation Methods and systems for plasma etching using bi-modal process gas composition responsive to plasma power level
US9607847B1 (en) * 2015-12-18 2017-03-28 Texas Instruments Incorporated Enhanced lateral cavity etch
KR102489215B1 (ko) * 2016-09-06 2023-01-16 도쿄엘렉트론가부시키가이샤 유사 원자층 에칭 방법
US9941121B1 (en) 2017-01-24 2018-04-10 International Business Machines Corporation Selective dry etch for directed self assembly of block copolymers
CN112105754B (zh) * 2018-05-17 2023-05-16 瑞士艾发科技 处理衬底的方法和真空沉积设备
US11393703B2 (en) * 2018-06-18 2022-07-19 Applied Materials, Inc. Apparatus and method for controlling a flow process material to a deposition chamber
EP4231785A1 (de) * 2020-10-19 2023-08-23 Tokyo Electron Limited Substratverarbeitungsverfahren und substratverarbeitungsvorrichtung
CN117080062B (zh) * 2023-10-13 2024-01-26 无锡邑文微电子科技股份有限公司 碗状刻蚀的方法

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JP2941572B2 (ja) 1992-08-11 1999-08-25 三菱電機株式会社 プラズマエッチング装置及び半導体装置の製造方法
DE4241045C1 (de) 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
DE4420962C2 (de) 1994-06-16 1998-09-17 Bosch Gmbh Robert Verfahren zur Bearbeitung von Silizium
US5779926A (en) 1994-09-16 1998-07-14 Applied Materials, Inc. Plasma process for etching multicomponent alloys
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Also Published As

Publication number Publication date
EP1047122A2 (de) 2000-10-25
DE60030905T2 (de) 2007-09-20
US20010044213A1 (en) 2001-11-22
JP2000323454A (ja) 2000-11-24
EP1047122B1 (de) 2006-09-27
JP4601113B2 (ja) 2010-12-22
US6383938B2 (en) 2002-05-07
EP1047122A3 (de) 2001-12-05
DE60030905D1 (de) 2006-11-09

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