DE60204502D1 - Polysiloxanharz und Verfahren zur Herstellung einer Zwischenschicht daraus für Wafer - Google Patents

Polysiloxanharz und Verfahren zur Herstellung einer Zwischenschicht daraus für Wafer

Info

Publication number
DE60204502D1
DE60204502D1 DE60204502T DE60204502T DE60204502D1 DE 60204502 D1 DE60204502 D1 DE 60204502D1 DE 60204502 T DE60204502 T DE 60204502T DE 60204502 T DE60204502 T DE 60204502T DE 60204502 D1 DE60204502 D1 DE 60204502D1
Authority
DE
Germany
Prior art keywords
wafers
producing
intermediate layer
polysiloxane resin
polysiloxane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60204502T
Other languages
English (en)
Other versions
DE60204502T2 (de
Inventor
Yi Yeol Lyu
Jin Heong Yim
Hyun Dam Jeong
Jung Hyung Kim
Sang Kook Mah
Eun Ju Nah
Sun Ii Hwang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR10-2001-0015884A external-priority patent/KR100475548B1/ko
Priority claimed from KR1020010056798A external-priority patent/KR100554327B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE60204502D1 publication Critical patent/DE60204502D1/de
Application granted granted Critical
Publication of DE60204502T2 publication Critical patent/DE60204502T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/06—Preparatory processes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/46—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Silicon Polymers (AREA)
  • Paints Or Removers (AREA)
  • Formation Of Insulating Films (AREA)
DE60204502T 2001-03-27 2002-03-19 Polysiloxanharz und Verfahren zur Herstellung einer Zwischenschicht daraus für Wafer Expired - Lifetime DE60204502T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2001-0015884A KR100475548B1 (ko) 2001-03-27 2001-03-27 실록산계 수지 및 이를 이용한 반도체 층간 절연막의형성방법
KR2001015884 2001-03-27
KR1020010056798A KR100554327B1 (ko) 2001-09-14 2001-09-14 실록산계 수지 및 이를 이용한 반도체 층간 절연막의 형성방법
KR2001056798 2001-09-14

Publications (2)

Publication Number Publication Date
DE60204502D1 true DE60204502D1 (de) 2005-07-14
DE60204502T2 DE60204502T2 (de) 2006-05-18

Family

ID=36274133

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60204502T Expired - Lifetime DE60204502T2 (de) 2001-03-27 2002-03-19 Polysiloxanharz und Verfahren zur Herstellung einer Zwischenschicht daraus für Wafer

Country Status (3)

Country Link
EP (1) EP1245642B1 (de)
JP (1) JP3739331B2 (de)
DE (1) DE60204502T2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100475548B1 (ko) * 2001-03-27 2005-03-10 삼성전자주식회사 실록산계 수지 및 이를 이용한 반도체 층간 절연막의형성방법
JP2004161875A (ja) 2002-11-13 2004-06-10 Shin Etsu Chem Co Ltd 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁間膜及び半導体装置
JP3884699B2 (ja) 2002-11-13 2007-02-21 信越化学工業株式会社 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置
JP2004161876A (ja) 2002-11-13 2004-06-10 Shin Etsu Chem Co Ltd 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置
JP2004161877A (ja) * 2002-11-13 2004-06-10 Shin Etsu Chem Co Ltd 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置
JP2004269693A (ja) 2003-03-10 2004-09-30 Shin Etsu Chem Co Ltd 多孔質膜形成用組成物及びその製造方法、多孔質膜の製造方法、多孔質膜、層間絶縁膜、及び半導体装置
JP4139710B2 (ja) 2003-03-10 2008-08-27 信越化学工業株式会社 多孔質膜形成用組成物、多孔質膜の製造方法、多孔質膜、層間絶縁膜、及び半導体装置
JP4479160B2 (ja) * 2003-03-11 2010-06-09 チッソ株式会社 シルセスキオキサン誘導体を用いて得られる重合体
TWI278473B (en) * 2003-03-12 2007-04-11 Chisso Corp Polymer with the silsesquioxane skeleton in its main chain, method of forming the same, and coating film and membrane of preventing metal ion elution
JP2004292641A (ja) 2003-03-27 2004-10-21 Shin Etsu Chem Co Ltd 多孔質膜形成用組成物、多孔質膜の製造方法、多孔質膜、層間絶縁膜、及び半導体装置
JP2004307692A (ja) 2003-04-09 2004-11-04 Shin Etsu Chem Co Ltd 多孔質膜形成用組成物、多孔質膜の製造方法、多孔質膜、層間絶縁膜及び半導体装置
JP2004307694A (ja) 2003-04-09 2004-11-04 Shin Etsu Chem Co Ltd 多孔質膜形成用組成物、多孔質膜の製造方法、多孔質膜、層間絶縁膜及び半導体装置。
KR100506695B1 (ko) * 2003-06-02 2005-08-08 삼성전자주식회사 실록산계 수지 및 이를 이용한 반도체 층간 절연막
KR100507967B1 (ko) * 2003-07-01 2005-08-10 삼성전자주식회사 실록산계 수지 및 이를 이용한 반도체 층간 절연막
KR100504291B1 (ko) * 2003-07-14 2005-07-27 삼성전자주식회사 게르마늄을 포함하는 실록산계 수지 및 이를 이용한반도체 층간 절연막 형성 방법
US7223517B2 (en) * 2003-08-05 2007-05-29 International Business Machines Corporation Lithographic antireflective hardmask compositions and uses thereof
KR20050024721A (ko) * 2003-09-01 2005-03-11 삼성전자주식회사 신규 실록산계 수지 및 이를 이용한 반도체 층간 절연막
CN1680466A (zh) * 2003-11-24 2005-10-12 三星电子株式会社 用多面体分子倍半硅氧烷，形成半导体器件用层间电介质膜的方法
KR100572801B1 (ko) * 2003-12-23 2006-04-19 삼성코닝 주식회사 기계적 특성이 우수한 절연막 코팅 조성물
JP2005187381A (ja) * 2003-12-25 2005-07-14 Asahi Kasei Corp ケイ素化合物の精製法
JP2007525803A (ja) * 2004-01-20 2007-09-06 ワールド・プロパティーズ・インコーポレイテッド 回路材料、回路、多層回路、およびそれらの製造方法
US7399581B2 (en) * 2005-02-24 2008-07-15 International Business Machines Corporation Photoresist topcoat for a photolithographic process
EP2197647B1 (de) * 2007-09-27 2012-10-24 Henkel Corporation Hochglänzendes, semipermanentes zweikomponenten-trennmittel auf wasserbasis für polyestersubstrate
JP6016558B2 (ja) * 2012-09-27 2016-10-26 旭化成株式会社 シリカ系被膜の製造方法
JP6021605B2 (ja) * 2012-11-19 2016-11-09 新日鉄住金化学株式会社 かご型シルセスキオキサン化合物、それを用いた硬化性樹脂組成物及び樹脂硬化物
CN108503811B (zh) * 2018-04-26 2020-08-07 长春工业大学 一种赋予聚乳酸形状记忆的聚合物
CN112201565B (zh) * 2020-09-11 2022-07-26 上海交通大学 半导体表面共价接枝无氟纳米孔洞low k介电薄膜方法

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US5484867A (en) * 1993-08-12 1996-01-16 The University Of Dayton Process for preparation of polyhedral oligomeric silsesquioxanes and systhesis of polymers containing polyhedral oligomeric silsesqioxane group segments
US5656555A (en) * 1995-02-17 1997-08-12 Texas Instruments Incorporated Modified hydrogen silsesquioxane spin-on glass
US5635240A (en) * 1995-06-19 1997-06-03 Dow Corning Corporation Electronic coating materials using mixed polymers
US5942638A (en) * 1998-01-05 1999-08-24 The United States Of America As Represented By The Secretary Of The Air Force Method of functionalizing polycyclic silicones and the resulting compounds

Also Published As

Publication number Publication date
EP1245642B1 (de) 2005-06-08
EP1245642A1 (de) 2002-10-02
JP3739331B2 (ja) 2006-01-25
JP2002363285A (ja) 2002-12-18
DE60204502T2 (de) 2006-05-18

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