JP6530289B2 - 分析前処理装置 - Google Patents
分析前処理装置 Download PDFInfo
- Publication number
- JP6530289B2 JP6530289B2 JP2015179739A JP2015179739A JP6530289B2 JP 6530289 B2 JP6530289 B2 JP 6530289B2 JP 2015179739 A JP2015179739 A JP 2015179739A JP 2015179739 A JP2015179739 A JP 2015179739A JP 6530289 B2 JP6530289 B2 JP 6530289B2
- Authority
- JP
- Japan
- Prior art keywords
- unit
- gas
- liquid
- hydrofluoric acid
- water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004458 analytical method Methods 0.000 title claims description 37
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 138
- 239000007788 liquid Substances 0.000 claims description 81
- 239000007789 gas Substances 0.000 claims description 78
- 239000000758 substrate Substances 0.000 claims description 68
- 238000000354 decomposition reaction Methods 0.000 claims description 64
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 53
- 238000011084 recovery Methods 0.000 claims description 39
- 239000007921 spray Substances 0.000 claims description 24
- 238000000926 separation method Methods 0.000 claims description 11
- 150000004767 nitrides Chemical group 0.000 claims description 8
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims description 3
- 230000008016 vaporization Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 description 67
- 239000012808 vapor phase Substances 0.000 description 35
- 229910052581 Si3N4 Inorganic materials 0.000 description 34
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 34
- 239000000243 solution Substances 0.000 description 26
- 239000012535 impurity Substances 0.000 description 24
- 239000002184 metal Substances 0.000 description 22
- 239000012071 phase Substances 0.000 description 19
- 238000010438 heat treatment Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 14
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 12
- 238000001035 drying Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 239000007864 aqueous solution Substances 0.000 description 8
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- GYQWAOSGJGFWAE-UHFFFAOYSA-N azane tetrafluorosilane Chemical compound N.[Si](F)(F)(F)F GYQWAOSGJGFWAE-UHFFFAOYSA-N 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 description 4
- 230000032258 transport Effects 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 3
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 230000002035 prolonged effect Effects 0.000 description 3
- 150000003377 silicon compounds Chemical class 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- -1 hydrofluoric acid peroxide Chemical class 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000004876 x-ray fluorescence Methods 0.000 description 2
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- MGNHOGAVECORPT-UHFFFAOYSA-N difluorosilicon Chemical compound F[Si]F MGNHOGAVECORPT-UHFFFAOYSA-N 0.000 description 1
- IJKVHSBPTUYDLN-UHFFFAOYSA-N dihydroxy(oxo)silane Chemical compound O[Si](O)=O IJKVHSBPTUYDLN-UHFFFAOYSA-N 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000006199 nebulizer Substances 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 239000008400 supply water Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/20—Metals
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/40—Concentrating samples
- G01N1/4044—Concentrating samples by chemical techniques; Digestion; Chemical decomposition
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0095—Semiconductive materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/44—Sample treatment involving radiation, e.g. heat
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Engineering & Computer Science (AREA)
- Food Science & Technology (AREA)
- Medicinal Chemistry (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Sampling And Sample Adjustment (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
Description
Claims (6)
- 分析対象を収容可能な収容部と、
前記収容部内の気圧を減圧する減圧部と、
液体を気化して前記収容部内に導入する導入部と、
前記導入部に水を液体状態で供給する第1供給部と、
前記導入部にフッ化水素酸を気体状態で供給する第2供給部とを備え、
前記導入部は、液体状態の水を気化した水と気体状態のフッ化水素酸との混合気体を前記収容部内に導入し、
前記導入部は、噴霧部を含み、
前記噴霧部は、
前記第1供給部から供給された液体状態の水が供給される液体供給口と、
前記第2供給部から供給された気体状態のフッ化水素酸が供給される気体供給口と、
噴霧口と、を含み、
前記噴霧口は、液体状態の水を噴霧して気化するときに、気体状態のフッ化水素酸を混合する、分析前処理装置。 - 前記分析対象は、基板上に設けられた窒化膜または窒酸化膜である、請求項1に記載の分析前処理装置。
- 基板上の前記分析対象を気相分解した後に該基板上に薬液を供給し、前記基板上に残存する被測定物を前記薬液内に回収する回収部をさらに備えた、請求項1または請求項2に記載の分析前処理装置。
- 前記第2供給部は、99%以上の濃度のフッ化水素酸を収容している、請求項1から請求項3のいずれか一項に記載の分析前処理装置。
- 前記導入部は、気液分離部をさらに含み、
前記気液分離部は、気化された水および気体状態のフッ化水素酸を液体状態の水から分離する、請求項1から請求項4のいずれか一項に記載の分析前処理装置。 - 前記導入部は、気液分離部をさらに含み、
前記気体供給口は前記液体供給口と前記噴霧口との間に設けられ、
前記気液分離部は、気化された水および気体状態のフッ化水素酸を液体状態の水から分離する、請求項1から請求項4のいずれか一項に記載の分析前処理装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015179739A JP6530289B2 (ja) | 2015-09-11 | 2015-09-11 | 分析前処理装置 |
US15/066,271 US10962519B2 (en) | 2015-09-11 | 2016-03-10 | Analysis pretreatment device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015179739A JP6530289B2 (ja) | 2015-09-11 | 2015-09-11 | 分析前処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017053806A JP2017053806A (ja) | 2017-03-16 |
JP6530289B2 true JP6530289B2 (ja) | 2019-06-12 |
Family
ID=58236553
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015179739A Active JP6530289B2 (ja) | 2015-09-11 | 2015-09-11 | 分析前処理装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US10962519B2 (ja) |
JP (1) | JP6530289B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6547197B2 (ja) * | 2017-09-20 | 2019-07-24 | 株式会社リガク | 基板汚染分析システム |
US11244841B2 (en) * | 2017-12-01 | 2022-02-08 | Elemental Scientific, Inc. | Systems for integrated decomposition and scanning of a semiconducting wafer |
JP6603934B2 (ja) * | 2018-04-13 | 2019-11-13 | 東芝メモリ株式会社 | シリコン基板の分析方法 |
JP6618059B1 (ja) | 2018-07-09 | 2019-12-11 | 株式会社リガク | X線分析システム、x線分析装置及び気相分解装置 |
CN110672391B (zh) * | 2019-10-24 | 2022-05-10 | 明光市恒鼎凹土有限公司 | 一种带有混匀功能的矿石多级缩分器 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1178120A (en) * | 1966-04-15 | 1970-01-21 | Noranda Mines Ltd | Apparatus and process for the Deoxidation of a Molten Metal |
DE3650127T2 (de) * | 1985-08-28 | 1995-05-24 | Texas Instruments Inc | Verfahren und vorrichtung zum entfernen von schichten von substraten. |
US4749440A (en) * | 1985-08-28 | 1988-06-07 | Fsi Corporation | Gaseous process and apparatus for removing films from substrates |
JP2680933B2 (ja) * | 1990-12-14 | 1997-11-19 | 信越半導体株式会社 | シリコンウェハの洗浄方法及びその洗浄装置 |
JP2973638B2 (ja) | 1991-09-27 | 1999-11-08 | 日本電気株式会社 | 不純物の分析方法 |
US5777300A (en) * | 1993-11-19 | 1998-07-07 | Tokyo Electron Kabushiki Kaisha | Processing furnace for oxidizing objects |
US6077451A (en) | 1996-03-28 | 2000-06-20 | Kabushiki Kaisha Toshiba | Method and apparatus for etching of silicon materials |
US6053984A (en) * | 1997-11-17 | 2000-04-25 | Petvai; Steve I. | Method and apparatus for decomposition of silicon oxide layers for impurity analysis of silicon wafers |
JP4755746B2 (ja) | 2000-01-07 | 2011-08-24 | 多摩化学工業株式会社 | 半導体ウエハ表面の不純物測定方法及びそのための不純物回収装置 |
JP3603278B2 (ja) * | 2001-09-06 | 2004-12-22 | 理学電機工業株式会社 | 蛍光x線分析システムおよびそれに用いるプログラム |
JP2005003422A (ja) * | 2003-06-10 | 2005-01-06 | Matsushita Electric Ind Co Ltd | 全反射蛍光x線分析方法および気相分解処理装置 |
JP2005249546A (ja) * | 2004-03-03 | 2005-09-15 | Nec Electronics Corp | ウエハ表面の金属元素の分析方法 |
JP2005265718A (ja) | 2004-03-19 | 2005-09-29 | Sumitomo Mitsubishi Silicon Corp | 不純物の分析方法 |
JP5921093B2 (ja) * | 2010-12-10 | 2016-05-24 | 株式会社東芝 | 試料汚染方法 |
GB2487716B (en) * | 2011-01-24 | 2015-06-03 | Memsstar Ltd | Vapour Etch of Silicon Dioxide with Improved Selectivity |
JP6118031B2 (ja) * | 2012-03-15 | 2017-04-19 | 株式会社東芝 | 不純物分析装置及び方法 |
JP2015038452A (ja) | 2013-08-19 | 2015-02-26 | 株式会社リガク | 分析装置および分析制御プログラム |
-
2015
- 2015-09-11 JP JP2015179739A patent/JP6530289B2/ja active Active
-
2016
- 2016-03-10 US US15/066,271 patent/US10962519B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20170072378A1 (en) | 2017-03-16 |
US10962519B2 (en) | 2021-03-30 |
JP2017053806A (ja) | 2017-03-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6530289B2 (ja) | 分析前処理装置 | |
TWI612597B (zh) | 矽基板用分析裝置 | |
KR100932053B1 (ko) | 처리장치, 처리방법 및 플라즈마원 | |
US20050208674A1 (en) | Method for analyzing impurities | |
US10712328B2 (en) | Analysis device | |
JP6118031B2 (ja) | 不純物分析装置及び方法 | |
KR102253559B1 (ko) | 분리 재생 장치 및 기판 처리 장치 | |
US6053984A (en) | Method and apparatus for decomposition of silicon oxide layers for impurity analysis of silicon wafers | |
JP2002005799A (ja) | 微量金属不純物の分析方法 | |
JP2003059894A (ja) | 基板処理装置 | |
CN111989565B (zh) | 硅基板的分析方法 | |
US6658764B2 (en) | Apparatus and method for preventing droplets on wafers during solvent drying process | |
TWI635550B (zh) | 基板污染物分析裝置 | |
JP6547197B2 (ja) | 基板汚染分析システム | |
JP4760458B2 (ja) | 半導体ウェーハ収納容器の金属汚染分析方法 | |
JP6668166B2 (ja) | フッ素含有有機溶剤の回収装置および基板処理装置 | |
US20200057105A1 (en) | Wafer surface test preprocessing device and wafer surface test apparatus having the same | |
JP2014190873A (ja) | 不純物金属のサンプリング方法、及び溶液中金属成分の分析方法 | |
Vierhaus et al. | Cleaning of Silicon Wafer Surfaces with Reactive Gases | |
JPH01280249A (ja) | Si半導体基板の表面分析用反応装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20170531 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170810 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180601 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180531 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180727 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20180903 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20181130 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190228 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20190308 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190419 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190516 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6530289 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |