JPS5572036A - Preparing semiconductor device - Google Patents

Preparing semiconductor device

Info

Publication number
JPS5572036A
JPS5572036A JP14622178A JP14622178A JPS5572036A JP S5572036 A JPS5572036 A JP S5572036A JP 14622178 A JP14622178 A JP 14622178A JP 14622178 A JP14622178 A JP 14622178A JP S5572036 A JPS5572036 A JP S5572036A
Authority
JP
Japan
Prior art keywords
sio
layer
electron beam
film
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14622178A
Other languages
Japanese (ja)
Other versions
JPS641930B2 (en
Inventor
Hiroshi Yano
Seiichi Yoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14622178A priority Critical patent/JPS5572036A/en
Publication of JPS5572036A publication Critical patent/JPS5572036A/en
Publication of JPS641930B2 publication Critical patent/JPS641930B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To produce a fine pattern without using a resist pattern by employing an electron beam drawing on SiO2 at a specified degree of vacuum and then selectively etching in FH atmosphere at a specified reduced pressure.
CONSTITUTION: Electron beam radiation on SiO2 film under about 10-4W10-6 Toor causes the irradiated area to be covered with formed hydrocarbon compound film layer. Next, treating in HF atmosphere at 5W10 Toor reduced pressure acts to selectively etch away the SiO2 under the hydrocarbon compound layer film. In this process, the electron beam used has acted on the residual gas from the oil diffusion pump and transformed it to the hydrocarbon film layer on the SiO2 layer. The process provides a high accuracy etching to SiO2 layer without causing side-way etching.
COPYRIGHT: (C)1980,JPO&Japio
JP14622178A 1978-11-27 1978-11-27 Preparing semiconductor device Granted JPS5572036A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14622178A JPS5572036A (en) 1978-11-27 1978-11-27 Preparing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14622178A JPS5572036A (en) 1978-11-27 1978-11-27 Preparing semiconductor device

Publications (2)

Publication Number Publication Date
JPS5572036A true JPS5572036A (en) 1980-05-30
JPS641930B2 JPS641930B2 (en) 1989-01-13

Family

ID=15402839

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14622178A Granted JPS5572036A (en) 1978-11-27 1978-11-27 Preparing semiconductor device

Country Status (1)

Country Link
JP (1) JPS5572036A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012157776A1 (en) * 2011-05-19 2012-11-22 ダイヤニトリックス株式会社 Acrylamide aqueous solution, stabilization agent for acrylamide aqueous solution, and stabilization method for acrylamide aqueous solution

Also Published As

Publication number Publication date
JPS641930B2 (en) 1989-01-13

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