JPS5429573A - Fine machining method of semiconductor - Google Patents

Fine machining method of semiconductor

Info

Publication number
JPS5429573A
JPS5429573A JP9502677A JP9502677A JPS5429573A JP S5429573 A JPS5429573 A JP S5429573A JP 9502677 A JP9502677 A JP 9502677A JP 9502677 A JP9502677 A JP 9502677A JP S5429573 A JPS5429573 A JP S5429573A
Authority
JP
Japan
Prior art keywords
semiconductor
machining method
fine machining
burrying
narrowing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9502677A
Other languages
Japanese (ja)
Inventor
Kensuke Nakada
Takehisa Nitta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9502677A priority Critical patent/JPS5429573A/en
Publication of JPS5429573A publication Critical patent/JPS5429573A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE: To obtain narrow oxide film separation region and to increase the density, by radiating electron rays or laser light on the semiconductor layer surface through narrowing them less than 1 μm in diameter orthogonally, and by burrying the concave several μm in depth after forming it according to the required pattern with photo etching.
COPYRIGHT: (C)1979,JPO&Japio
JP9502677A 1977-08-10 1977-08-10 Fine machining method of semiconductor Pending JPS5429573A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9502677A JPS5429573A (en) 1977-08-10 1977-08-10 Fine machining method of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9502677A JPS5429573A (en) 1977-08-10 1977-08-10 Fine machining method of semiconductor

Publications (1)

Publication Number Publication Date
JPS5429573A true JPS5429573A (en) 1979-03-05

Family

ID=14126571

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9502677A Pending JPS5429573A (en) 1977-08-10 1977-08-10 Fine machining method of semiconductor

Country Status (1)

Country Link
JP (1) JPS5429573A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55139167U (en) * 1979-03-27 1980-10-03
JPS56130941A (en) * 1980-03-17 1981-10-14 Fujitsu Ltd Manufacture of semiconductor device
JPS56130940A (en) * 1980-03-17 1981-10-14 Fujitsu Ltd Manufacture of semiconductor device
JPS58155738A (en) * 1982-03-11 1983-09-16 Mitsubishi Electric Corp Semiconductor integrated circuit and manufacture thereof
JPS58216437A (en) * 1982-06-10 1983-12-16 Mitsubishi Electric Corp Preparation of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5023277A (en) * 1973-06-29 1975-03-12
JPS5141976A (en) * 1974-08-08 1976-04-08 Siemens Ag

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5023277A (en) * 1973-06-29 1975-03-12
JPS5141976A (en) * 1974-08-08 1976-04-08 Siemens Ag

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55139167U (en) * 1979-03-27 1980-10-03
JPS6214128Y2 (en) * 1979-03-27 1987-04-10
JPS56130941A (en) * 1980-03-17 1981-10-14 Fujitsu Ltd Manufacture of semiconductor device
JPS56130940A (en) * 1980-03-17 1981-10-14 Fujitsu Ltd Manufacture of semiconductor device
JPS6310898B2 (en) * 1980-03-17 1988-03-10 Fujitsu Ltd
JPS58155738A (en) * 1982-03-11 1983-09-16 Mitsubishi Electric Corp Semiconductor integrated circuit and manufacture thereof
JPS58216437A (en) * 1982-06-10 1983-12-16 Mitsubishi Electric Corp Preparation of semiconductor device
JPS6312380B2 (en) * 1982-06-10 1988-03-18 Mitsubishi Electric Corp

Similar Documents

Publication Publication Date Title
JPS53108390A (en) Semiconductor device and its manufacture
JPS56144577A (en) Production of semiconductor device
JPS5430777A (en) Manufacture of semiconductor device
JPS5588352A (en) Manufacture of semiconductor device
JPS5429573A (en) Fine machining method of semiconductor
JPS5333050A (en) Production of semiconductor element
JPS52119172A (en) Forming method of fine pattern
JPS5349953A (en) Soft x-ray transcription mask
JPS52117558A (en) Soft x-ray exposure mask and its manufacturing method
JPS53110379A (en) Optical filter and its manufacture
JPS546767A (en) Manufacture of semiconductor device
JPS5391684A (en) Semiconductor laser
JPS5299793A (en) Semiconductor laser device
JPS5428566A (en) Manufacture of semiconductor device
JPS5293273A (en) Fine pattern forming method
JPS547891A (en) Manufacture for planar semiconductor light emission device
JPS51140477A (en) Method of fabricating semiconductor device
JPS5596681A (en) Method of fabricating semiconductor device
JPS5371A (en) Scribing method of semiconductor wafer
JPS5310291A (en) Production of semiconductor light emitting device
JPS52120770A (en) Thin film formation method
JPS5270762A (en) Electrode formation method of semiconductor element
JPS52117553A (en) Circular mask
JPS52100872A (en) Fabrication of mask for x-ray exposure
JPS5516474A (en) Method of manufacturing semiconductor element