ATE136159T1 - Verfahren zum herstellen einer abgeschiedenen schicht, und verfahren zum herstellen einer halbleitervorrichtung - Google Patents
Verfahren zum herstellen einer abgeschiedenen schicht, und verfahren zum herstellen einer halbleitervorrichtungInfo
- Publication number
- ATE136159T1 ATE136159T1 AT90310501T AT90310501T ATE136159T1 AT E136159 T1 ATE136159 T1 AT E136159T1 AT 90310501 T AT90310501 T AT 90310501T AT 90310501 T AT90310501 T AT 90310501T AT E136159 T1 ATE136159 T1 AT E136159T1
- Authority
- AT
- Austria
- Prior art keywords
- producing
- forming
- semiconductor device
- deposited layer
- deposited film
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 2
- 229910052721 tungsten Inorganic materials 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 150000002736 metal compounds Chemical class 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Junction Field-Effect Transistors (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25001689A JP2834788B2 (ja) | 1989-09-26 | 1989-09-26 | 堆積膜形成法 |
JP1250015A JP2781223B2 (ja) | 1989-09-26 | 1989-09-26 | 堆積膜形成法 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE136159T1 true ATE136159T1 (de) | 1996-04-15 |
Family
ID=26539602
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT90310501T ATE136159T1 (de) | 1989-09-26 | 1990-09-25 | Verfahren zum herstellen einer abgeschiedenen schicht, und verfahren zum herstellen einer halbleitervorrichtung |
Country Status (8)
Country | Link |
---|---|
US (1) | US5134092A (de) |
EP (1) | EP0420590B1 (de) |
KR (1) | KR940004443B1 (de) |
AT (1) | ATE136159T1 (de) |
DE (1) | DE69026178T2 (de) |
MY (1) | MY107409A (de) |
PT (1) | PT95435B (de) |
SG (1) | SG43276A1 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2721023B2 (ja) * | 1989-09-26 | 1998-03-04 | キヤノン株式会社 | 堆積膜形成法 |
ATE139866T1 (de) | 1990-02-19 | 1996-07-15 | Canon Kk | Verfahren zum herstellen von abgeschiedener metallschicht, die aluminium als hauptkomponente enthält, mit anwendung von alkylaluminiumhydrid |
JPH06196419A (ja) * | 1992-12-24 | 1994-07-15 | Canon Inc | 化学気相堆積装置及びそれによる半導体装置の製造方法 |
US5552339A (en) * | 1994-08-29 | 1996-09-03 | Taiwan Semiconductor Manufacturing Company | Furnace amorphous-SI cap layer to prevent tungsten volcano effect |
JPH08186081A (ja) * | 1994-12-29 | 1996-07-16 | F T L:Kk | 半導体装置の製造方法及び半導体装置の製造装置 |
US6348419B1 (en) * | 1999-08-18 | 2002-02-19 | Infineon Technologies Ag | Modification of the wet characteristics of deposited layers and in-line control |
KR100451515B1 (ko) * | 2002-06-28 | 2004-10-06 | 주식회사 하이닉스반도체 | 반도체소자의 캐패시터 제조방법 |
JP2012177191A (ja) | 2011-02-03 | 2012-09-13 | Canon Inc | 成膜装置及び成膜方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3816491A (en) * | 1973-02-02 | 1974-06-11 | Du Pont | Hexamethyltungsten |
US4349408A (en) * | 1981-03-26 | 1982-09-14 | Rca Corporation | Method of depositing a refractory metal on a semiconductor substrate |
US4617087A (en) * | 1985-09-27 | 1986-10-14 | International Business Machines Corporation | Method for differential selective deposition of metal for fabricating metal contacts in integrated semiconductor circuits |
DE3772659D1 (de) * | 1986-06-28 | 1991-10-10 | Ulvac Corp | Verfahren und vorrichtung zum beschichten unter anwendung einer cvd-beschichtungstechnik. |
-
1990
- 1990-09-25 US US07/587,844 patent/US5134092A/en not_active Expired - Lifetime
- 1990-09-25 EP EP90310501A patent/EP0420590B1/de not_active Expired - Lifetime
- 1990-09-25 SG SG1996006855A patent/SG43276A1/en unknown
- 1990-09-25 DE DE69026178T patent/DE69026178T2/de not_active Expired - Fee Related
- 1990-09-25 AT AT90310501T patent/ATE136159T1/de not_active IP Right Cessation
- 1990-09-26 MY MYPI90001666A patent/MY107409A/en unknown
- 1990-09-26 PT PT95435A patent/PT95435B/pt not_active IP Right Cessation
- 1990-09-26 KR KR1019900015297A patent/KR940004443B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
PT95435B (pt) | 1997-07-31 |
MY107409A (en) | 1995-12-30 |
DE69026178T2 (de) | 1996-08-14 |
EP0420590A3 (en) | 1991-08-21 |
EP0420590B1 (de) | 1996-03-27 |
EP0420590A2 (de) | 1991-04-03 |
KR910007111A (ko) | 1991-04-30 |
DE69026178D1 (de) | 1996-05-02 |
PT95435A (pt) | 1991-05-22 |
SG43276A1 (en) | 1997-10-17 |
US5134092A (en) | 1992-07-28 |
KR940004443B1 (ko) | 1994-05-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |