ATE136159T1 - Verfahren zum herstellen einer abgeschiedenen schicht, und verfahren zum herstellen einer halbleitervorrichtung - Google Patents

Verfahren zum herstellen einer abgeschiedenen schicht, und verfahren zum herstellen einer halbleitervorrichtung

Info

Publication number
ATE136159T1
ATE136159T1 AT90310501T AT90310501T ATE136159T1 AT E136159 T1 ATE136159 T1 AT E136159T1 AT 90310501 T AT90310501 T AT 90310501T AT 90310501 T AT90310501 T AT 90310501T AT E136159 T1 ATE136159 T1 AT E136159T1
Authority
AT
Austria
Prior art keywords
producing
forming
semiconductor device
deposited layer
deposited film
Prior art date
Application number
AT90310501T
Other languages
English (en)
Inventor
Shigeyuki C O Canon Matsumoto
Osamu C O Canon Kabushik Ikeda
Kazuaki C O Canon Kabushi Ohmi
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1250015A external-priority patent/JP2781223B2/ja
Priority claimed from JP25001689A external-priority patent/JP2834788B2/ja
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE136159T1 publication Critical patent/ATE136159T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Physical Vapour Deposition (AREA)
AT90310501T 1989-09-26 1990-09-25 Verfahren zum herstellen einer abgeschiedenen schicht, und verfahren zum herstellen einer halbleitervorrichtung ATE136159T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1250015A JP2781223B2 (ja) 1989-09-26 1989-09-26 堆積膜形成法
JP25001689A JP2834788B2 (ja) 1989-09-26 1989-09-26 堆積膜形成法

Publications (1)

Publication Number Publication Date
ATE136159T1 true ATE136159T1 (de) 1996-04-15

Family

ID=26539602

Family Applications (1)

Application Number Title Priority Date Filing Date
AT90310501T ATE136159T1 (de) 1989-09-26 1990-09-25 Verfahren zum herstellen einer abgeschiedenen schicht, und verfahren zum herstellen einer halbleitervorrichtung

Country Status (8)

Country Link
US (1) US5134092A (de)
EP (1) EP0420590B1 (de)
KR (1) KR940004443B1 (de)
AT (1) ATE136159T1 (de)
DE (1) DE69026178T2 (de)
MY (1) MY107409A (de)
PT (1) PT95435B (de)
SG (1) SG43276A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2721023B2 (ja) * 1989-09-26 1998-03-04 キヤノン株式会社 堆積膜形成法
DE69120446T2 (de) 1990-02-19 1996-11-14 Canon Kk Verfahren zum Herstellen von abgeschiedener Metallschicht, die Aluminium als Hauptkomponente enthält, mit Anwendung von Alkylaluminiumhydrid
JPH06196419A (ja) * 1992-12-24 1994-07-15 Canon Inc 化学気相堆積装置及びそれによる半導体装置の製造方法
US5552339A (en) * 1994-08-29 1996-09-03 Taiwan Semiconductor Manufacturing Company Furnace amorphous-SI cap layer to prevent tungsten volcano effect
JPH08186081A (ja) 1994-12-29 1996-07-16 F T L:Kk 半導体装置の製造方法及び半導体装置の製造装置
US6348419B1 (en) * 1999-08-18 2002-02-19 Infineon Technologies Ag Modification of the wet characteristics of deposited layers and in-line control
KR100451515B1 (ko) * 2002-06-28 2004-10-06 주식회사 하이닉스반도체 반도체소자의 캐패시터 제조방법
JP2012177191A (ja) 2011-02-03 2012-09-13 Canon Inc 成膜装置及び成膜方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3816491A (en) * 1973-02-02 1974-06-11 Du Pont Hexamethyltungsten
US4349408A (en) * 1981-03-26 1982-09-14 Rca Corporation Method of depositing a refractory metal on a semiconductor substrate
US4617087A (en) * 1985-09-27 1986-10-14 International Business Machines Corporation Method for differential selective deposition of metal for fabricating metal contacts in integrated semiconductor circuits
DE3772659D1 (de) * 1986-06-28 1991-10-10 Ulvac Corp Verfahren und vorrichtung zum beschichten unter anwendung einer cvd-beschichtungstechnik.

Also Published As

Publication number Publication date
EP0420590A3 (en) 1991-08-21
EP0420590A2 (de) 1991-04-03
DE69026178D1 (de) 1996-05-02
PT95435B (pt) 1997-07-31
KR940004443B1 (ko) 1994-05-25
KR910007111A (ko) 1991-04-30
SG43276A1 (en) 1997-10-17
US5134092A (en) 1992-07-28
PT95435A (pt) 1991-05-22
MY107409A (en) 1995-12-30
EP0420590B1 (de) 1996-03-27
DE69026178T2 (de) 1996-08-14

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties