ATE73869T1 - Verfahren und vorrichtung zum selektiven chemischen aufdampfen. - Google Patents

Verfahren und vorrichtung zum selektiven chemischen aufdampfen.

Info

Publication number
ATE73869T1
ATE73869T1 AT86903102T AT86903102T ATE73869T1 AT E73869 T1 ATE73869 T1 AT E73869T1 AT 86903102 T AT86903102 T AT 86903102T AT 86903102 T AT86903102 T AT 86903102T AT E73869 T1 ATE73869 T1 AT E73869T1
Authority
AT
Austria
Prior art keywords
vapor deposition
chemical vapor
selective chemical
substrate
metal
Prior art date
Application number
AT86903102T
Other languages
English (en)
Inventor
Ronald Harvey Wilson
Robert Winston Stoll
Michael Anthony Calacone
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/733,445 external-priority patent/US4653428A/en
Application filed by Gen Electric filed Critical Gen Electric
Application granted granted Critical
Publication of ATE73869T1 publication Critical patent/ATE73869T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Toxicology (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)
  • Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
  • Electrodes Of Semiconductors (AREA)
AT86903102T 1985-05-10 1986-05-09 Verfahren und vorrichtung zum selektiven chemischen aufdampfen. ATE73869T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US06/733,445 US4653428A (en) 1985-05-10 1985-05-10 Selective chemical vapor deposition apparatus
US81389085A 1985-12-27 1985-12-27
PCT/US1986/000994 WO1986006755A1 (en) 1985-05-10 1986-05-09 Selective chemical vapor deposition method and apparatus
EP86903102A EP0223787B1 (de) 1985-05-10 1986-05-09 Verfahren und vorrichtung zum selektiven chemischen aufdampfen

Publications (1)

Publication Number Publication Date
ATE73869T1 true ATE73869T1 (de) 1992-04-15

Family

ID=27112577

Family Applications (1)

Application Number Title Priority Date Filing Date
AT86903102T ATE73869T1 (de) 1985-05-10 1986-05-09 Verfahren und vorrichtung zum selektiven chemischen aufdampfen.

Country Status (4)

Country Link
EP (1) EP0223787B1 (de)
AT (1) ATE73869T1 (de)
DE (1) DE3684414D1 (de)
WO (1) WO1986006755A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3751756T2 (de) * 1986-06-30 1996-08-01 Ulvac Corp Verfahren zum Abscheiden aus der Gasphase
EP0251764B1 (de) * 1986-06-30 1996-03-27 Nihon Sinku Gijutsu Kabushiki Kaisha Verfahren und Vorrichtung zum Abscheiden aus der Gasphase
DE3818509A1 (de) * 1987-06-01 1988-12-22 Gen Electric Verfahren und einrichtung zum herstellen eines niederohmigen kontaktes mit aluminium und dessen legierungen durch selektives niederschlagen von wolfram
GB2216903A (en) * 1988-04-06 1989-10-18 Ici Plc Transparent conductive zinc oxide layer
US5156820A (en) * 1989-05-15 1992-10-20 Rapro Technology, Inc. Reaction chamber with controlled radiant energy heating and distributed reactant flow
ATE134070T1 (de) * 1989-09-26 1996-02-15 Canon Kk Verfahren zum herstellen einer abgeschiedenen schicht und verfahren zum herstellen einer halbleitervorrichtung
US5250323A (en) * 1989-10-30 1993-10-05 Kabushiki Kaisha Toshiba Chemical vapor growth apparatus having an exhaust device including trap
ATE139866T1 (de) * 1990-02-19 1996-07-15 Canon Kk Verfahren zum herstellen von abgeschiedener metallschicht, die aluminium als hauptkomponente enthält, mit anwendung von alkylaluminiumhydrid
US6309971B1 (en) 1996-08-01 2001-10-30 Cypress Semiconductor Corporation Hot metallization process
US6156645A (en) * 1996-10-25 2000-12-05 Cypress Semiconductor Corporation Method of forming a metal layer on a substrate, including formation of wetting layer at a high temperature

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4496609A (en) * 1969-10-15 1985-01-29 Applied Materials, Inc. Chemical vapor deposition coating process employing radiant heat and a susceptor
US3845738A (en) * 1973-09-12 1974-11-05 Rca Corp Vapor deposition apparatus with pyrolytic graphite heat shield
US3916822A (en) * 1974-04-26 1975-11-04 Bell Telephone Labor Inc Chemical vapor deposition reactor
US4550684A (en) * 1983-08-11 1985-11-05 Genus, Inc. Cooled optical window for semiconductor wafer heating

Also Published As

Publication number Publication date
WO1986006755A1 (en) 1986-11-20
EP0223787B1 (de) 1992-03-18
DE3684414D1 (de) 1992-04-23
EP0223787A1 (de) 1987-06-03

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