ATE73869T1 - Verfahren und vorrichtung zum selektiven chemischen aufdampfen. - Google Patents
Verfahren und vorrichtung zum selektiven chemischen aufdampfen.Info
- Publication number
- ATE73869T1 ATE73869T1 AT86903102T AT86903102T ATE73869T1 AT E73869 T1 ATE73869 T1 AT E73869T1 AT 86903102 T AT86903102 T AT 86903102T AT 86903102 T AT86903102 T AT 86903102T AT E73869 T1 ATE73869 T1 AT E73869T1
- Authority
- AT
- Austria
- Prior art keywords
- vapor deposition
- chemical vapor
- selective chemical
- substrate
- metal
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 title 1
- 238000000151 deposition Methods 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Toxicology (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Chemical Vapour Deposition (AREA)
- Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/733,445 US4653428A (en) | 1985-05-10 | 1985-05-10 | Selective chemical vapor deposition apparatus |
US81389085A | 1985-12-27 | 1985-12-27 | |
PCT/US1986/000994 WO1986006755A1 (en) | 1985-05-10 | 1986-05-09 | Selective chemical vapor deposition method and apparatus |
EP86903102A EP0223787B1 (de) | 1985-05-10 | 1986-05-09 | Verfahren und vorrichtung zum selektiven chemischen aufdampfen |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE73869T1 true ATE73869T1 (de) | 1992-04-15 |
Family
ID=27112577
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT86903102T ATE73869T1 (de) | 1985-05-10 | 1986-05-09 | Verfahren und vorrichtung zum selektiven chemischen aufdampfen. |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0223787B1 (de) |
AT (1) | ATE73869T1 (de) |
DE (1) | DE3684414D1 (de) |
WO (1) | WO1986006755A1 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4994301A (en) * | 1986-06-30 | 1991-02-19 | Nihon Sinku Gijutsu Kabusiki Kaisha | ACVD (chemical vapor deposition) method for selectively depositing metal on a substrate |
DE3751756T2 (de) * | 1986-06-30 | 1996-08-01 | Ulvac Corp | Verfahren zum Abscheiden aus der Gasphase |
DE3818509A1 (de) * | 1987-06-01 | 1988-12-22 | Gen Electric | Verfahren und einrichtung zum herstellen eines niederohmigen kontaktes mit aluminium und dessen legierungen durch selektives niederschlagen von wolfram |
GB2216903A (en) * | 1988-04-06 | 1989-10-18 | Ici Plc | Transparent conductive zinc oxide layer |
US5156820A (en) * | 1989-05-15 | 1992-10-20 | Rapro Technology, Inc. | Reaction chamber with controlled radiant energy heating and distributed reactant flow |
DE69025252T2 (de) * | 1989-09-26 | 1996-07-04 | Canon Kk | Verfahren zum Herstellen einer abgeschiedenen Schicht und Verfahren zum Herstellen einer Halbleitervorrichtung |
US5250323A (en) * | 1989-10-30 | 1993-10-05 | Kabushiki Kaisha Toshiba | Chemical vapor growth apparatus having an exhaust device including trap |
ATE139866T1 (de) * | 1990-02-19 | 1996-07-15 | Canon Kk | Verfahren zum herstellen von abgeschiedener metallschicht, die aluminium als hauptkomponente enthält, mit anwendung von alkylaluminiumhydrid |
US6309971B1 (en) | 1996-08-01 | 2001-10-30 | Cypress Semiconductor Corporation | Hot metallization process |
US6156645A (en) * | 1996-10-25 | 2000-12-05 | Cypress Semiconductor Corporation | Method of forming a metal layer on a substrate, including formation of wetting layer at a high temperature |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4496609A (en) * | 1969-10-15 | 1985-01-29 | Applied Materials, Inc. | Chemical vapor deposition coating process employing radiant heat and a susceptor |
US3845738A (en) * | 1973-09-12 | 1974-11-05 | Rca Corp | Vapor deposition apparatus with pyrolytic graphite heat shield |
US3916822A (en) * | 1974-04-26 | 1975-11-04 | Bell Telephone Labor Inc | Chemical vapor deposition reactor |
US4550684A (en) * | 1983-08-11 | 1985-11-05 | Genus, Inc. | Cooled optical window for semiconductor wafer heating |
-
1986
- 1986-05-09 DE DE8686903102T patent/DE3684414D1/de not_active Expired - Fee Related
- 1986-05-09 AT AT86903102T patent/ATE73869T1/de not_active IP Right Cessation
- 1986-05-09 WO PCT/US1986/000994 patent/WO1986006755A1/en active IP Right Grant
- 1986-05-09 EP EP86903102A patent/EP0223787B1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0223787A1 (de) | 1987-06-03 |
EP0223787B1 (de) | 1992-03-18 |
DE3684414D1 (de) | 1992-04-23 |
WO1986006755A1 (en) | 1986-11-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |