IT1075610B - Procedimento per rivestire substrati mediante deposizione al plasma - Google Patents

Procedimento per rivestire substrati mediante deposizione al plasma

Info

Publication number
IT1075610B
IT1075610B IT19482/77A IT1948277A IT1075610B IT 1075610 B IT1075610 B IT 1075610B IT 19482/77 A IT19482/77 A IT 19482/77A IT 1948277 A IT1948277 A IT 1948277A IT 1075610 B IT1075610 B IT 1075610B
Authority
IT
Italy
Prior art keywords
procedure
plasma deposition
coating substrates
substrates
coating
Prior art date
Application number
IT19482/77A
Other languages
English (en)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/651,556 external-priority patent/US4142004A/en
Application filed by Western Electric Co filed Critical Western Electric Co
Application granted granted Critical
Publication of IT1075610B publication Critical patent/IT1075610B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Formation Of Insulating Films (AREA)
IT19482/77A 1976-01-22 1977-01-20 Procedimento per rivestire substrati mediante deposizione al plasma IT1075610B (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US65155776A 1976-01-22 1976-01-22
US05/651,556 US4142004A (en) 1976-01-22 1976-01-22 Method of coating semiconductor substrates

Publications (1)

Publication Number Publication Date
IT1075610B true IT1075610B (it) 1985-04-22

Family

ID=27096092

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19482/77A IT1075610B (it) 1976-01-22 1977-01-20 Procedimento per rivestire substrati mediante deposizione al plasma

Country Status (7)

Country Link
JP (1) JPS52115785A (it)
DE (1) DE2702165A1 (it)
ES (1) ES455227A1 (it)
FR (1) FR2339251A1 (it)
IT (1) IT1075610B (it)
NL (1) NL7700641A (it)
SE (1) SE7700229L (it)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54128283A (en) * 1978-03-29 1979-10-04 Hitachi Ltd Manufacture of semiconductor device
JPS5643731A (en) * 1979-09-17 1981-04-22 Mitsubishi Electric Corp Film forming method
JPS5687353A (en) * 1979-12-18 1981-07-15 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor integrated circuit device
JPS5745931A (en) * 1980-09-04 1982-03-16 Fujitsu Ltd Semiconductor device with multilayer passivation film and manufacture thereof
JPS57141935A (en) * 1981-02-25 1982-09-02 Nec Corp Manufacture of semiconductor device
JPS58131733A (ja) * 1982-01-29 1983-08-05 Toshiba Corp 半導体装置
DE3272669D1 (en) * 1982-03-18 1986-09-25 Ibm Deutschland Plasma-reactor and its use in etching and coating substrates
JPS598341A (ja) * 1982-07-06 1984-01-17 Toshiba Corp 半導体装置
JPS5994848A (ja) * 1982-11-24 1984-05-31 Fuji Electric Co Ltd 半導体装置の製造方法
US4513684A (en) * 1982-12-22 1985-04-30 Energy Conversion Devices, Inc. Upstream cathode assembly
US4455351A (en) * 1983-06-13 1984-06-19 At&T Bell Laboratories Preparation of photodiodes
JPS61128403A (ja) * 1984-11-28 1986-06-16 鐘淵化学工業株式会社 非単結晶状シリコン系絶縁材料
US4618541A (en) * 1984-12-21 1986-10-21 Advanced Micro Devices, Inc. Method of forming a silicon nitride film transparent to ultraviolet radiation and resulting article
JPS61284928A (ja) * 1985-06-10 1986-12-15 Mitsubishi Electric Corp 半導体装置
JPH084109B2 (ja) * 1987-08-18 1996-01-17 富士通株式会社 半導体装置およびその製造方法
WO1995029269A1 (fr) * 1994-04-22 1995-11-02 Innovatique S.A. Procede pour la nitruration a basse pression d'une piece metallique et four pour la mise en ×uvre dudit procede
FR2725015B1 (fr) * 1994-09-23 1996-12-20 Innovatique Sa Four utilisable pour la nitruration a basse pression d'une piece metallique
JP6146160B2 (ja) * 2013-06-26 2017-06-14 東京エレクトロン株式会社 成膜方法、記憶媒体及び成膜装置

Also Published As

Publication number Publication date
DE2702165A1 (de) 1977-07-28
SE7700229L (sv) 1977-07-23
ES455227A1 (es) 1978-04-16
JPS52115785A (en) 1977-09-28
NL7700641A (nl) 1977-07-26
FR2339251A1 (fr) 1977-08-19

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