JPS54128283A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS54128283A JPS54128283A JP3549578A JP3549578A JPS54128283A JP S54128283 A JPS54128283 A JP S54128283A JP 3549578 A JP3549578 A JP 3549578A JP 3549578 A JP3549578 A JP 3549578A JP S54128283 A JPS54128283 A JP S54128283A
- Authority
- JP
- Japan
- Prior art keywords
- film
- deteriorated
- factors
- high frequency
- frequency power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To give control in order to form the cross-section of the etched area into the desired shape by deteriorating the film in the thickness direction via the glow discharge and then forming the insulator film through the vapor growth.
CONSTITUTION: When forming the insulator film through the plasma CVD method, the current amount of the reactive gas, the high frequency power and others are varied. Thus, the thin film can be deteriorated in terms of the composition ratio of the component elements, the density and other factors. With deterioration of the thin film, the etching speed varies too. In this respect, the film is deteriorated in the thickness direction to control the cross-section into the desired shape after the selective etching. Furthermore, the uneven distribution of the film thickness and the poor coating performance at the stage error part can be prevented on the semiconductor substrate by securing the optimum conditions for the current amount of the reactive gas, the high frequency power, the vacuum air and other factors.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3549578A JPS54128283A (en) | 1978-03-29 | 1978-03-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3549578A JPS54128283A (en) | 1978-03-29 | 1978-03-29 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54128283A true JPS54128283A (en) | 1979-10-04 |
Family
ID=12443322
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3549578A Pending JPS54128283A (en) | 1978-03-29 | 1978-03-29 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54128283A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57154876A (en) * | 1981-03-19 | 1982-09-24 | Nec Corp | Schottky barrier gate type field effect transistor |
| JPS57154877A (en) * | 1981-03-19 | 1982-09-24 | Nec Corp | Schottky barrier gate type field effect transistor |
| JPS611028A (en) * | 1984-05-18 | 1986-01-07 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH06310504A (en) * | 1993-04-27 | 1994-11-04 | Nec Corp | Insulation film structure and its manufacturing method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52115785A (en) * | 1976-01-22 | 1977-09-28 | Western Electric Co | Process for coating substrate |
-
1978
- 1978-03-29 JP JP3549578A patent/JPS54128283A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52115785A (en) * | 1976-01-22 | 1977-09-28 | Western Electric Co | Process for coating substrate |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57154876A (en) * | 1981-03-19 | 1982-09-24 | Nec Corp | Schottky barrier gate type field effect transistor |
| JPS57154877A (en) * | 1981-03-19 | 1982-09-24 | Nec Corp | Schottky barrier gate type field effect transistor |
| JPS611028A (en) * | 1984-05-18 | 1986-01-07 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH037146B2 (en) * | 1984-05-18 | 1991-01-31 | Fujitsu Ltd | |
| JPH06310504A (en) * | 1993-04-27 | 1994-11-04 | Nec Corp | Insulation film structure and its manufacturing method |
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