JPS5687325A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5687325A JPS5687325A JP16513079A JP16513079A JPS5687325A JP S5687325 A JPS5687325 A JP S5687325A JP 16513079 A JP16513079 A JP 16513079A JP 16513079 A JP16513079 A JP 16513079A JP S5687325 A JPS5687325 A JP S5687325A
- Authority
- JP
- Japan
- Prior art keywords
- carbons
- gas
- substrate
- rie
- dipped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000001020 plasma etching Methods 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 239000012495 reaction gas Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To prevent a characteristic deterioration by removing carbons from a substrate surface by a method wherein an insulated film on an Si substrate is dipped in a low temperature oxygen plasma, after being applied a reactive ion etching with a gas of Freon system as a reaction gas. CONSTITUTION:The insulated coating of a silicon film oxide, film nitride, polycrystalline silicon and the like is applied to etching by a reactive ion etching method (RIE) with the gas of the Freon system as the reaction gas and after that, it is dipped in the oxygen plasma, thereby permitting the carbons immersed in the substrate surface during the RIE to be removed in the form CXOY. Whereby, as is clear from the graph, the electrical characteristics of semiconductor elements can be prevented from being deteriorated because of the removal of the carbons from the substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16513079A JPS5687325A (en) | 1979-12-19 | 1979-12-19 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16513079A JPS5687325A (en) | 1979-12-19 | 1979-12-19 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5687325A true JPS5687325A (en) | 1981-07-15 |
JPH0135496B2 JPH0135496B2 (en) | 1989-07-25 |
Family
ID=15806465
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16513079A Granted JPS5687325A (en) | 1979-12-19 | 1979-12-19 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5687325A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58127329A (en) * | 1982-01-26 | 1983-07-29 | Seiko Epson Corp | Etching method for insulating protection film of semiconductor substrate |
JPS5911629A (en) * | 1982-07-12 | 1984-01-21 | Toshiba Corp | Surface cleaning method |
JPS6098626A (en) * | 1983-11-02 | 1985-06-01 | Oki Electric Ind Co Ltd | Surface treating method of semiconductor layer |
JPH01281748A (en) * | 1988-05-07 | 1989-11-13 | Fujitsu Ltd | Manufacture of semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5362474A (en) * | 1976-11-17 | 1978-06-03 | Hitachi Ltd | Cleaning method of metal photo mask |
-
1979
- 1979-12-19 JP JP16513079A patent/JPS5687325A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5362474A (en) * | 1976-11-17 | 1978-06-03 | Hitachi Ltd | Cleaning method of metal photo mask |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58127329A (en) * | 1982-01-26 | 1983-07-29 | Seiko Epson Corp | Etching method for insulating protection film of semiconductor substrate |
JPS5911629A (en) * | 1982-07-12 | 1984-01-21 | Toshiba Corp | Surface cleaning method |
JPS6098626A (en) * | 1983-11-02 | 1985-06-01 | Oki Electric Ind Co Ltd | Surface treating method of semiconductor layer |
JPH0329173B2 (en) * | 1983-11-02 | 1991-04-23 | Oki Electric Ind Co Ltd | |
JPH01281748A (en) * | 1988-05-07 | 1989-11-13 | Fujitsu Ltd | Manufacture of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPH0135496B2 (en) | 1989-07-25 |
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