JPS5687325A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5687325A
JPS5687325A JP16513079A JP16513079A JPS5687325A JP S5687325 A JPS5687325 A JP S5687325A JP 16513079 A JP16513079 A JP 16513079A JP 16513079 A JP16513079 A JP 16513079A JP S5687325 A JPS5687325 A JP S5687325A
Authority
JP
Japan
Prior art keywords
carbons
gas
substrate
rie
dipped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16513079A
Other languages
Japanese (ja)
Other versions
JPH0135496B2 (en
Inventor
Kazumasa Onodera
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP16513079A priority Critical patent/JPS5687325A/en
Publication of JPS5687325A publication Critical patent/JPS5687325A/en
Publication of JPH0135496B2 publication Critical patent/JPH0135496B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To prevent a characteristic deterioration by removing carbons from a substrate surface by a method wherein an insulated film on an Si substrate is dipped in a low temperature oxygen plasma, after being applied a reactive ion etching with a gas of Freon system as a reaction gas. CONSTITUTION:The insulated coating of a silicon film oxide, film nitride, polycrystalline silicon and the like is applied to etching by a reactive ion etching method (RIE) with the gas of the Freon system as the reaction gas and after that, it is dipped in the oxygen plasma, thereby permitting the carbons immersed in the substrate surface during the RIE to be removed in the form CXOY. Whereby, as is clear from the graph, the electrical characteristics of semiconductor elements can be prevented from being deteriorated because of the removal of the carbons from the substrate.
JP16513079A 1979-12-19 1979-12-19 Manufacture of semiconductor device Granted JPS5687325A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16513079A JPS5687325A (en) 1979-12-19 1979-12-19 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16513079A JPS5687325A (en) 1979-12-19 1979-12-19 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5687325A true JPS5687325A (en) 1981-07-15
JPH0135496B2 JPH0135496B2 (en) 1989-07-25

Family

ID=15806465

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16513079A Granted JPS5687325A (en) 1979-12-19 1979-12-19 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5687325A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58127329A (en) * 1982-01-26 1983-07-29 Seiko Epson Corp Etching method for insulating protection film of semiconductor substrate
JPS5911629A (en) * 1982-07-12 1984-01-21 Toshiba Corp Surface cleaning method
JPS6098626A (en) * 1983-11-02 1985-06-01 Oki Electric Ind Co Ltd Surface treating method of semiconductor layer
JPH01281748A (en) * 1988-05-07 1989-11-13 Fujitsu Ltd Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5362474A (en) * 1976-11-17 1978-06-03 Hitachi Ltd Cleaning method of metal photo mask

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5362474A (en) * 1976-11-17 1978-06-03 Hitachi Ltd Cleaning method of metal photo mask

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58127329A (en) * 1982-01-26 1983-07-29 Seiko Epson Corp Etching method for insulating protection film of semiconductor substrate
JPS5911629A (en) * 1982-07-12 1984-01-21 Toshiba Corp Surface cleaning method
JPS6098626A (en) * 1983-11-02 1985-06-01 Oki Electric Ind Co Ltd Surface treating method of semiconductor layer
JPH0329173B2 (en) * 1983-11-02 1991-04-23 Oki Electric Ind Co Ltd
JPH01281748A (en) * 1988-05-07 1989-11-13 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPH0135496B2 (en) 1989-07-25

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