DE3678760D1 - Vorrichtung zur chemischen metallorganischen gasabscheidung zum wachsen einer epitaxialen halbleiterverbindungsschicht. - Google Patents

Vorrichtung zur chemischen metallorganischen gasabscheidung zum wachsen einer epitaxialen halbleiterverbindungsschicht.

Info

Publication number
DE3678760D1
DE3678760D1 DE8686109893T DE3678760T DE3678760D1 DE 3678760 D1 DE3678760 D1 DE 3678760D1 DE 8686109893 T DE8686109893 T DE 8686109893T DE 3678760 T DE3678760 T DE 3678760T DE 3678760 D1 DE3678760 D1 DE 3678760D1
Authority
DE
Germany
Prior art keywords
growing
connection layer
organic metal
epitaxial semiconductor
metal gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686109893T
Other languages
English (en)
Inventor
Kazumi Kasai
Hiromi Itoh
Hitoshi Tanaka
Tatsuya Oh-Hori
Junji Komeno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=15702576&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3678760(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3678760D1 publication Critical patent/DE3678760D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/38—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
    • H01L21/383—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a gaseous phase
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
DE8686109893T 1985-07-19 1986-07-18 Vorrichtung zur chemischen metallorganischen gasabscheidung zum wachsen einer epitaxialen halbleiterverbindungsschicht. Expired - Fee Related DE3678760D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15984985 1985-07-19

Publications (1)

Publication Number Publication Date
DE3678760D1 true DE3678760D1 (de) 1991-05-23

Family

ID=15702576

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686109893T Expired - Fee Related DE3678760D1 (de) 1985-07-19 1986-07-18 Vorrichtung zur chemischen metallorganischen gasabscheidung zum wachsen einer epitaxialen halbleiterverbindungsschicht.

Country Status (5)

Country Link
US (1) US4883020A (de)
EP (1) EP0209150B1 (de)
JP (1) JPS62104028A (de)
KR (1) KR900001666B1 (de)
DE (1) DE3678760D1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01125821A (ja) * 1987-11-10 1989-05-18 Matsushita Electric Ind Co Ltd 気相成長装置
DE68926480T2 (de) * 1988-09-16 1996-10-02 Texas Instruments Inc Hochdruck-Photolack Siliconisierungsverfahren und Vorrichtung
US5088444A (en) * 1989-03-15 1992-02-18 Kabushiki Kaisha Toshiba Vapor deposition system
US5000682A (en) * 1990-01-22 1991-03-19 Semitherm Vertical thermal processor for semiconductor wafers
JPH04175294A (ja) * 1990-11-09 1992-06-23 Fujitsu Ltd 気相成長装置
EP0747931B1 (de) * 1990-11-16 2000-07-12 Kabushiki Kaisha Watanabe Shoko Methode zum Transportieren von Substraten mit plattenförmiger Grundlage
JPH05218176A (ja) * 1992-02-07 1993-08-27 Tokyo Electron Tohoku Kk 熱処理方法及び被処理体の移載方法
JP3330166B2 (ja) * 1992-12-04 2002-09-30 東京エレクトロン株式会社 処理装置
US5424097A (en) * 1993-09-30 1995-06-13 Specialty Coating Systems, Inc. Continuous vapor deposition apparatus
US5879808A (en) * 1995-10-27 1999-03-09 Alpha Metals, Inc. Parylene polymer layers
US5536319A (en) * 1995-10-27 1996-07-16 Specialty Coating Systems, Inc. Parylene deposition apparatus including an atmospheric shroud and inert gas source
DE69614648T2 (de) * 1995-12-05 2002-06-27 Applied Materials Inc Reduzierung der Partikelverunreinigung in der Halbleiterfertigung
JP3784117B2 (ja) * 1996-11-13 2006-06-07 東京応化工業株式会社 基板の処理装置
US5806319A (en) * 1997-03-13 1998-09-15 Wary; John Method and apparatus for cryogenically cooling a deposition chamber
US5841005A (en) * 1997-03-14 1998-11-24 Dolbier, Jr.; William R. Parylene AF4 synthesis
US6051276A (en) * 1997-03-14 2000-04-18 Alpha Metals, Inc. Internally heated pyrolysis zone
US6231289B1 (en) * 1998-08-08 2001-05-15 Brooks Automation, Inc. Dual plate gas assisted heater module
US6350321B1 (en) * 1998-12-08 2002-02-26 International Business Machines Corporation UHV horizontal hot wall cluster CVD/growth design
US6780250B2 (en) * 2000-01-28 2004-08-24 Texas Instruments Incorporated System and method for integrated oxide removal and processing of a semiconductor wafer
JP2004516678A (ja) 2000-12-23 2004-06-03 アイクストロン、アーゲー 半導体基板処理装置および処理方法
US6899507B2 (en) 2002-02-08 2005-05-31 Asm Japan K.K. Semiconductor processing apparatus comprising chamber partitioned into reaction and transfer sections
US6613587B1 (en) * 2002-04-11 2003-09-02 Micron Technology, Inc. Method of replacing at least a portion of a semiconductor substrate deposition chamber liner
US20070051314A1 (en) * 2005-09-08 2007-03-08 Jusung Engineering Co., Ltd. Movable transfer chamber and substrate-treating apparatus including the same
JP6354539B2 (ja) * 2014-11-25 2018-07-11 東京エレクトロン株式会社 基板処理装置、基板処理方法、記憶媒体

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4313783A (en) * 1980-05-19 1982-02-02 Branson International Plasma Corporation Computer controlled system for processing semiconductor wafers
JPS5787120A (en) * 1980-11-20 1982-05-31 Matsushita Electric Ind Co Ltd Method and device for plasma cvd
US4433951A (en) * 1981-02-13 1984-02-28 Lam Research Corporation Modular loadlock
JPS5893321A (ja) * 1981-11-30 1983-06-03 Semiconductor Energy Lab Co Ltd 半導体装置製造装置
US4465416A (en) * 1982-05-17 1984-08-14 The Perkin-Elmer Corporation Wafer handling mechanism
JPS5918195A (ja) * 1982-07-20 1984-01-30 Nippon Telegr & Teleph Corp <Ntt> 超高真空薄膜成長装置
JPS59222922A (ja) * 1983-06-01 1984-12-14 Nippon Telegr & Teleph Corp <Ntt> 気相成長装置
EP0132408A3 (de) * 1983-07-26 1986-04-16 Jim Auclair Verfahren und Vorrichtung zur Züchtung von Schichten und zur Herstellung von Überzügen auf einem Substrat
JPS6074531A (ja) * 1983-09-30 1985-04-26 Hitachi Ltd 真空処理装置
GB8332394D0 (en) * 1983-12-05 1984-01-11 Pilkington Brothers Plc Coating apparatus
US4553069A (en) * 1984-01-05 1985-11-12 General Ionex Corporation Wafer holding apparatus for ion implantation
US4584045A (en) * 1984-02-21 1986-04-22 Plasma-Therm, Inc. Apparatus for conveying a semiconductor wafer
DE3427057A1 (de) * 1984-07-23 1986-01-23 Standard Elektrik Lorenz Ag, 7000 Stuttgart Anlage zum herstellen von halbleiter-schichtstrukturen durch epitaktisches wachstum
US4592800A (en) * 1984-11-02 1986-06-03 Oerlikon-Buhrle U.S.A. Inc. Method of inhibiting corrosion after aluminum etching

Also Published As

Publication number Publication date
KR870001653A (ko) 1987-03-17
EP0209150A3 (en) 1987-05-27
JPS62104028A (ja) 1987-05-14
EP0209150B1 (de) 1991-04-17
KR900001666B1 (ko) 1990-03-17
EP0209150A2 (de) 1987-01-21
JPH0573246B2 (de) 1993-10-14
US4883020A (en) 1989-11-28

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8365 Fully valid after opposition proceedings
8339 Ceased/non-payment of the annual fee