JPS5787120A - Method and device for plasma cvd - Google Patents

Method and device for plasma cvd

Info

Publication number
JPS5787120A
JPS5787120A JP16388980A JP16388980A JPS5787120A JP S5787120 A JPS5787120 A JP S5787120A JP 16388980 A JP16388980 A JP 16388980A JP 16388980 A JP16388980 A JP 16388980A JP S5787120 A JPS5787120 A JP S5787120A
Authority
JP
Japan
Prior art keywords
substrate
chamber
reaction chamber
reserve chamber
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16388980A
Other languages
Japanese (ja)
Inventor
Seiichi Nagata
Shinichiro Ishihara
Masaharu Ono
Masatoshi Kitagawa
Koshiro Mori
Takashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP16388980A priority Critical patent/JPS5787120A/en
Publication of JPS5787120A publication Critical patent/JPS5787120A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To obtain a thin film of high quality by inserting and taking out a substrate without exposing a reaction room to the atmospheric air by providing a valve and a reserve chamber keeping the substrate at a predetermined temperature by heating up walls of the reaction chamber. CONSTITUTION:A reaction chamber is degassed by plasma excitation applying AC voltage across electrodes 9, 10 supplying H2 while heating up the reaction chamber 1 to 250-300 deg.C and gate valve at about 150 deg.C. The substrate is inserted through a window 19a into a reserve chamber, filled with N2, to be purged by H2. The plasma excitation is stopped and the substrate 12 is placed at the predetermined position manipulating valves 5 and 2. After the substrate reached the predetermined temperature, SiH4 diluted by H2 is led in, exhausted and amorphous Si is deposited at 1Torr. When a desired thickness of the film is obtained, the electricity is discharged and the supply of SiH4 is stopped. The reaction chamber and the reserve chamber are substituted by H2 and the substrate is removed to the reserve chamber room and is, after substituted by N2, taken outside. By this method, the high quality film with stable properties is obtained unaffected by the atmospheric condition of the CVD device.
JP16388980A 1980-11-20 1980-11-20 Method and device for plasma cvd Pending JPS5787120A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16388980A JPS5787120A (en) 1980-11-20 1980-11-20 Method and device for plasma cvd

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16388980A JPS5787120A (en) 1980-11-20 1980-11-20 Method and device for plasma cvd

Publications (1)

Publication Number Publication Date
JPS5787120A true JPS5787120A (en) 1982-05-31

Family

ID=15782720

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16388980A Pending JPS5787120A (en) 1980-11-20 1980-11-20 Method and device for plasma cvd

Country Status (1)

Country Link
JP (1) JPS5787120A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59124712A (en) * 1982-12-29 1984-07-18 Fujitsu Ltd Semiconductor device manufacturing apparatus
JPS6169282U (en) * 1984-10-08 1986-05-12
JPS62104028A (en) * 1985-07-19 1987-05-14 Fujitsu Ltd Organo metallic chemical vapor deposition equipment
JPH02294018A (en) * 1989-05-09 1990-12-05 Hitachi Ltd Film formation device
JPH04137613A (en) * 1990-09-28 1992-05-12 Handotai Process Kenkyusho:Kk Method and apparatus for manufacture of semiconductor device
JPH08195348A (en) * 1995-08-28 1996-07-30 Semiconductor Energy Lab Co Ltd Semiconductor device manufacturing equipment
JPH08213373A (en) * 1995-10-27 1996-08-20 Hitachi Ltd Plasma treating method and its equipment
JPH08241867A (en) * 1995-12-01 1996-09-17 Semiconductor Energy Lab Co Ltd Plasma treatment device and plasma treatment method
KR100560049B1 (en) * 1997-05-10 2006-05-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 A film forming method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5578524A (en) * 1978-12-10 1980-06-13 Shunpei Yamazaki Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5578524A (en) * 1978-12-10 1980-06-13 Shunpei Yamazaki Manufacture of semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59124712A (en) * 1982-12-29 1984-07-18 Fujitsu Ltd Semiconductor device manufacturing apparatus
JPS6169282U (en) * 1984-10-08 1986-05-12
JPS62104028A (en) * 1985-07-19 1987-05-14 Fujitsu Ltd Organo metallic chemical vapor deposition equipment
JPH02294018A (en) * 1989-05-09 1990-12-05 Hitachi Ltd Film formation device
JPH04137613A (en) * 1990-09-28 1992-05-12 Handotai Process Kenkyusho:Kk Method and apparatus for manufacture of semiconductor device
JPH08195348A (en) * 1995-08-28 1996-07-30 Semiconductor Energy Lab Co Ltd Semiconductor device manufacturing equipment
JPH08213373A (en) * 1995-10-27 1996-08-20 Hitachi Ltd Plasma treating method and its equipment
JPH08241867A (en) * 1995-12-01 1996-09-17 Semiconductor Energy Lab Co Ltd Plasma treatment device and plasma treatment method
KR100560049B1 (en) * 1997-05-10 2006-05-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 A film forming method

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