JPS57183039A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57183039A
JPS57183039A JP6697181A JP6697181A JPS57183039A JP S57183039 A JPS57183039 A JP S57183039A JP 6697181 A JP6697181 A JP 6697181A JP 6697181 A JP6697181 A JP 6697181A JP S57183039 A JPS57183039 A JP S57183039A
Authority
JP
Japan
Prior art keywords
substrate
heated
plane
nozzle
heating plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6697181A
Other languages
Japanese (ja)
Other versions
JPS6313338B2 (en
Inventor
Akio Mimura
Yasuhiro Mochizuki
Tokuo Watanabe
Tsutomu Yao
Tatsuya Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6697181A priority Critical patent/JPS57183039A/en
Publication of JPS57183039A publication Critical patent/JPS57183039A/en
Publication of JPS6313338B2 publication Critical patent/JPS6313338B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To precipitate and deposit a surface protecting film of uniform thickness at the non-plane-formed section by a method wherein the non-plane-formed section of a semiconductor substrate is heated up, and the gas containing the ingredients of the surface protecting film is blasted on the heated non-plane section. CONSTITUTION:The substrate 1, having the processed exposed end face at its main junction, is placed on a heating plate 2, a bell jar 21 is closed, the interior of the bell jar 21 is replaced with N2 gas, the heating plate 24 is heated up and rotated. Then, the point of a nozzle 27 is turned to the substrate 1, and when the temperature of the substrate 1 reaches the prescribed temperature, valves 326 and 327 are opened, and SiH4 and N2O are led into a reaction chamber from the nozzle 27. Accordingly, a polycrystalline Si film can be formed at the concaved part on the side face of the substrate 1 in an almost uniformed state.
JP6697181A 1981-05-06 1981-05-06 Manufacture of semiconductor device Granted JPS57183039A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6697181A JPS57183039A (en) 1981-05-06 1981-05-06 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6697181A JPS57183039A (en) 1981-05-06 1981-05-06 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57183039A true JPS57183039A (en) 1982-11-11
JPS6313338B2 JPS6313338B2 (en) 1988-03-25

Family

ID=13331412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6697181A Granted JPS57183039A (en) 1981-05-06 1981-05-06 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57183039A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009005569A (en) * 2007-06-25 2009-01-08 Seiko Precision Inc Actuator and coil frame

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0216385U (en) * 1988-07-19 1990-02-01
JPH0329737U (en) * 1989-07-31 1991-03-25
JPH0399645U (en) * 1990-01-31 1991-10-18

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009005569A (en) * 2007-06-25 2009-01-08 Seiko Precision Inc Actuator and coil frame
US7750528B2 (en) 2007-06-25 2010-07-06 Seiko Precision Inc. Actuator and coil frame

Also Published As

Publication number Publication date
JPS6313338B2 (en) 1988-03-25

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