JPS5632768A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5632768A JPS5632768A JP10837079A JP10837079A JPS5632768A JP S5632768 A JPS5632768 A JP S5632768A JP 10837079 A JP10837079 A JP 10837079A JP 10837079 A JP10837079 A JP 10837079A JP S5632768 A JPS5632768 A JP S5632768A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- approx
- si3n4
- nitriding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 8
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000005121 nitriding Methods 0.000 abstract 2
- 239000012298 atmosphere Substances 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain an IGFET having stable characteristics by diffusing a source region and a drain region in an Si substrate, then heating the substrate to form an Si3N4 film on the surface of the substrate, and forming a conductor on the Si3N4 film between these regions. CONSTITUTION:The source region 2 and drain region 3 are diffused at an interval therebetween on the surface layer of the Si substrate 1, the substrate 1 is heated at 1,250 deg.C for approx 1hr in high pressure N2 atmosphere in this state, and an Si3N4 film 4 of approx. 300Angstrom thick is formed directly on the entire surface of the substrate 1 by nitriding. Or the substrate 1 is heated at 1,100 deg.C in NH3 atmosphere of approx. 10kg/cm<2>, and the film 4 of generally same thickness is thus formed. Thereafter, a gate electrode 5 is formed on the film 4 at the position between the regions 2 and 3. In this manner the film 4 is not affected by the thin SiO2 film naturally formed on the surface upon proceeding of the nitriding from the surface of the substrate in the course of forming the film 4, and unstability can be eliminated like the formation of the film by a CVD process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10837079A JPS5632768A (en) | 1979-08-24 | 1979-08-24 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10837079A JPS5632768A (en) | 1979-08-24 | 1979-08-24 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5632768A true JPS5632768A (en) | 1981-04-02 |
Family
ID=14483040
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10837079A Pending JPS5632768A (en) | 1979-08-24 | 1979-08-24 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5632768A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5890778A (en) * | 1981-11-26 | 1983-05-30 | Toshiba Corp | Semiconductor device |
| JPS6146013A (en) * | 1984-08-10 | 1986-03-06 | 株式会社村田製作所 | Method of producing ceramic condenser |
| US5134452A (en) * | 1990-04-03 | 1992-07-28 | Mitsubishi Denki Kabushiki Kaisha | MIS type FET semiconductor device with gate insulating layer having a high dielectric breakdown strength |
| US5578848A (en) * | 1994-05-04 | 1996-11-26 | Regents Of The University Of Texas System | Ultra thin dielectric for electronic devices and method of making same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5177071A (en) * | 1974-12-27 | 1976-07-03 | Fujitsu Ltd | HANDOTAISOCHINO ANTEIKAHOHO |
| JPS51103775A (en) * | 1975-03-10 | 1976-09-13 | Fujitsu Ltd | HANDOTAISOCHINOSEIZOHOHO |
| JPS51105270A (en) * | 1975-03-13 | 1976-09-17 | Fujitsu Ltd | HANDOTAIHYOMENZETSUENMAKUNO KEISEIHOHO |
-
1979
- 1979-08-24 JP JP10837079A patent/JPS5632768A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5177071A (en) * | 1974-12-27 | 1976-07-03 | Fujitsu Ltd | HANDOTAISOCHINO ANTEIKAHOHO |
| JPS51103775A (en) * | 1975-03-10 | 1976-09-13 | Fujitsu Ltd | HANDOTAISOCHINOSEIZOHOHO |
| JPS51105270A (en) * | 1975-03-13 | 1976-09-17 | Fujitsu Ltd | HANDOTAIHYOMENZETSUENMAKUNO KEISEIHOHO |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5890778A (en) * | 1981-11-26 | 1983-05-30 | Toshiba Corp | Semiconductor device |
| JPS6146013A (en) * | 1984-08-10 | 1986-03-06 | 株式会社村田製作所 | Method of producing ceramic condenser |
| JPH0434809B2 (en) * | 1984-08-10 | 1992-06-09 | Murata Manufacturing Co | |
| US5134452A (en) * | 1990-04-03 | 1992-07-28 | Mitsubishi Denki Kabushiki Kaisha | MIS type FET semiconductor device with gate insulating layer having a high dielectric breakdown strength |
| US5578848A (en) * | 1994-05-04 | 1996-11-26 | Regents Of The University Of Texas System | Ultra thin dielectric for electronic devices and method of making same |
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