JPS6431975A - Reduced-pressure cvd device - Google Patents

Reduced-pressure cvd device

Info

Publication number
JPS6431975A
JPS6431975A JP18720087A JP18720087A JPS6431975A JP S6431975 A JPS6431975 A JP S6431975A JP 18720087 A JP18720087 A JP 18720087A JP 18720087 A JP18720087 A JP 18720087A JP S6431975 A JPS6431975 A JP S6431975A
Authority
JP
Japan
Prior art keywords
heat exchanger
reduced
cooling passage
door flange
pressure cvd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18720087A
Other languages
Japanese (ja)
Inventor
Shoichi Nakagawa
Hidekazu Tsujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP18720087A priority Critical patent/JPS6431975A/en
Publication of JPS6431975A publication Critical patent/JPS6431975A/en
Pending legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To easily and inexpensively prevent the formation and adhesion of flakes by passing a heating medium leaving a heat exchanger through a cooling passage in the door flange of the title reduced-pressure CVD device, and discharging the heating medium through the heat exchanger. CONSTITUTION:Gaseous ammonia 10 and gaseous SiH2Cl2 11 are introduced into a quartz tube 1 furnished with the door 5 fixed to the door flange 3 through an O ring 4, the inside of the tube 1 is evacuated from an exhaust port 12, and the tube 1 is heated to a specified temp. by a heater 2. Consequently, a film of Si3N4 is formed on the surface of a wafer 14 on a boat 13. In the reduced-pressure CVD device, the cooling passage 6 is provided in the door flange 3. Cooling water heated to an appropriate temp. of 50-60 deg.C by the heat exchanger 15 is passed through the cooling passage 6. The cooling water leaving the cooling passage 6 is passed through the heat exchanger 15, and then discharged. By this method, the formation and adhesion of the NH3Cl flake in the vicinity of the door flange 3 are prevented, the quality of the Si3N4 film is improved, the frequency of cleanings is reduced, and the service life of the O ring can be prolonged.
JP18720087A 1987-07-27 1987-07-27 Reduced-pressure cvd device Pending JPS6431975A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18720087A JPS6431975A (en) 1987-07-27 1987-07-27 Reduced-pressure cvd device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18720087A JPS6431975A (en) 1987-07-27 1987-07-27 Reduced-pressure cvd device

Publications (1)

Publication Number Publication Date
JPS6431975A true JPS6431975A (en) 1989-02-02

Family

ID=16201846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18720087A Pending JPS6431975A (en) 1987-07-27 1987-07-27 Reduced-pressure cvd device

Country Status (1)

Country Link
JP (1) JPS6431975A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01191427A (en) * 1988-01-27 1989-08-01 Toshiba Corp Low pressure cvd system
JPH0460557U (en) * 1990-10-01 1992-05-25
JP2002289603A (en) * 2001-03-28 2002-10-04 Tokyo Electron Ltd Heat treatment device and heat treatment method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01191427A (en) * 1988-01-27 1989-08-01 Toshiba Corp Low pressure cvd system
JPH0460557U (en) * 1990-10-01 1992-05-25
JP2002289603A (en) * 2001-03-28 2002-10-04 Tokyo Electron Ltd Heat treatment device and heat treatment method

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