JPS6431975A - Reduced-pressure cvd device - Google Patents
Reduced-pressure cvd deviceInfo
- Publication number
- JPS6431975A JPS6431975A JP18720087A JP18720087A JPS6431975A JP S6431975 A JPS6431975 A JP S6431975A JP 18720087 A JP18720087 A JP 18720087A JP 18720087 A JP18720087 A JP 18720087A JP S6431975 A JPS6431975 A JP S6431975A
- Authority
- JP
- Japan
- Prior art keywords
- heat exchanger
- reduced
- cooling passage
- door flange
- pressure cvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To easily and inexpensively prevent the formation and adhesion of flakes by passing a heating medium leaving a heat exchanger through a cooling passage in the door flange of the title reduced-pressure CVD device, and discharging the heating medium through the heat exchanger. CONSTITUTION:Gaseous ammonia 10 and gaseous SiH2Cl2 11 are introduced into a quartz tube 1 furnished with the door 5 fixed to the door flange 3 through an O ring 4, the inside of the tube 1 is evacuated from an exhaust port 12, and the tube 1 is heated to a specified temp. by a heater 2. Consequently, a film of Si3N4 is formed on the surface of a wafer 14 on a boat 13. In the reduced-pressure CVD device, the cooling passage 6 is provided in the door flange 3. Cooling water heated to an appropriate temp. of 50-60 deg.C by the heat exchanger 15 is passed through the cooling passage 6. The cooling water leaving the cooling passage 6 is passed through the heat exchanger 15, and then discharged. By this method, the formation and adhesion of the NH3Cl flake in the vicinity of the door flange 3 are prevented, the quality of the Si3N4 film is improved, the frequency of cleanings is reduced, and the service life of the O ring can be prolonged.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18720087A JPS6431975A (en) | 1987-07-27 | 1987-07-27 | Reduced-pressure cvd device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18720087A JPS6431975A (en) | 1987-07-27 | 1987-07-27 | Reduced-pressure cvd device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6431975A true JPS6431975A (en) | 1989-02-02 |
Family
ID=16201846
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18720087A Pending JPS6431975A (en) | 1987-07-27 | 1987-07-27 | Reduced-pressure cvd device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6431975A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01191427A (en) * | 1988-01-27 | 1989-08-01 | Toshiba Corp | Low pressure cvd system |
JPH0460557U (en) * | 1990-10-01 | 1992-05-25 | ||
JP2002289603A (en) * | 2001-03-28 | 2002-10-04 | Tokyo Electron Ltd | Heat treatment device and heat treatment method |
-
1987
- 1987-07-27 JP JP18720087A patent/JPS6431975A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01191427A (en) * | 1988-01-27 | 1989-08-01 | Toshiba Corp | Low pressure cvd system |
JPH0460557U (en) * | 1990-10-01 | 1992-05-25 | ||
JP2002289603A (en) * | 2001-03-28 | 2002-10-04 | Tokyo Electron Ltd | Heat treatment device and heat treatment method |
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