JPS5684462A - Plasma nitriding method - Google Patents

Plasma nitriding method

Info

Publication number
JPS5684462A
JPS5684462A JP15992179A JP15992179A JPS5684462A JP S5684462 A JPS5684462 A JP S5684462A JP 15992179 A JP15992179 A JP 15992179A JP 15992179 A JP15992179 A JP 15992179A JP S5684462 A JPS5684462 A JP S5684462A
Authority
JP
Japan
Prior art keywords
nitride
nitrided
activated
energy
inductive energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15992179A
Other languages
Japanese (ja)
Other versions
JPS6356311B2 (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP15992179A priority Critical patent/JPS5684462A/en
Publication of JPS5684462A publication Critical patent/JPS5684462A/en
Publication of JPS6356311B2 publication Critical patent/JPS6356311B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Powder Metallurgy (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To subject the surface of a material to a comparatively lowtemperature nitriding treatment in which a material is immersed in a plasma activated by exciting or ionizing a nitride gas by means of an inductive energy. CONSTITUTION:A nitride gas, e.g., N2 NH3, etc., is activated or ionized by an inductive energy under reduced pressure to form an activated plasmatic atmosphere, where a high frequency energy of 1-500MHz or a micro wave energy of 1-4GHz is used as an inductive energy. Then, in the atmosphere, the surface of a material previously heated to 100-800 deg.C, particularly 300-700 deg.C, is nitrided. The material to be nitrided includes semiconductors of Si or Si with N, O, C, etc. In the case of Si substrate as a material to be nitrided, the thickness of nitride or silicone nitride should be 5-200Angstrom .
JP15992179A 1979-12-10 1979-12-10 Plasma nitriding method Granted JPS5684462A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15992179A JPS5684462A (en) 1979-12-10 1979-12-10 Plasma nitriding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15992179A JPS5684462A (en) 1979-12-10 1979-12-10 Plasma nitriding method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP16618582A Division JPS5884107A (en) 1982-09-24 1982-09-24 Plasma nitriding method

Publications (2)

Publication Number Publication Date
JPS5684462A true JPS5684462A (en) 1981-07-09
JPS6356311B2 JPS6356311B2 (en) 1988-11-08

Family

ID=15704057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15992179A Granted JPS5684462A (en) 1979-12-10 1979-12-10 Plasma nitriding method

Country Status (1)

Country Link
JP (1) JPS5684462A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57177342A (en) * 1981-04-23 1982-11-01 Toshiba Corp Plasma treating apparatus of powder
JPS5884107A (en) * 1982-09-24 1983-05-20 Shunpei Yamazaki Plasma nitriding method
JPS58210626A (en) * 1982-06-01 1983-12-07 Mitsubishi Electric Corp Silicon nitride film forming apparatus
JPS625641A (en) * 1985-04-09 1987-01-12 フエアチヤイルド　セミコンダクタ　コ−ポレ−シヨン Low temperature plasma nitriding and application of nitride film formed therein
JPS62141727A (en) * 1985-12-16 1987-06-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPH08116017A (en) * 1994-10-14 1996-05-07 Nec Corp Lead frame for semiconductor integrated circuit device and its manufacturing method
KR100345809B1 (en) * 1999-09-14 2002-07-27 주식회사 케이피티 Method for plasma nitriding for extrusion die of aluminum
KR100661130B1 (en) 2006-01-20 2006-12-22 한국생산기술연구원 Method for nitriding stainless steel by post-plasma
JP2007288069A (en) * 2006-04-19 2007-11-01 Hitachi Kokusai Electric Inc Method for manufacturing semiconductor device
JP2011119747A (en) * 2000-03-13 2011-06-16 Foundation For Advancement Of International Science Method for forming nitride film, method for forming oxynitride film, method for sputtering nitride film, and method for forming gate insulation film
JP2014156644A (en) * 2013-02-18 2014-08-28 Jfe Steel Corp Nitriding treatment facility for grain-oriented electromagnetic steel sheet, and nitriding treatment method

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0131933B2 (en) * 1981-04-23 1989-06-28 Tokyo Shibaura Electric Co
JPS57177342A (en) * 1981-04-23 1982-11-01 Toshiba Corp Plasma treating apparatus of powder
JPS58210626A (en) * 1982-06-01 1983-12-07 Mitsubishi Electric Corp Silicon nitride film forming apparatus
JPS6359247B2 (en) * 1982-06-01 1988-11-18
JPS5884107A (en) * 1982-09-24 1983-05-20 Shunpei Yamazaki Plasma nitriding method
JPH021085B2 (en) * 1982-09-24 1990-01-10 Shunpei Yamazaki
JPS625641A (en) * 1985-04-09 1987-01-12 フエアチヤイルド　セミコンダクタ　コ−ポレ−シヨン Low temperature plasma nitriding and application of nitride film formed therein
JPS62141727A (en) * 1985-12-16 1987-06-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPH08116017A (en) * 1994-10-14 1996-05-07 Nec Corp Lead frame for semiconductor integrated circuit device and its manufacturing method
KR100345809B1 (en) * 1999-09-14 2002-07-27 주식회사 케이피티 Method for plasma nitriding for extrusion die of aluminum
JP2011119747A (en) * 2000-03-13 2011-06-16 Foundation For Advancement Of International Science Method for forming nitride film, method for forming oxynitride film, method for sputtering nitride film, and method for forming gate insulation film
KR100661130B1 (en) 2006-01-20 2006-12-22 한국생산기술연구원 Method for nitriding stainless steel by post-plasma
JP2007288069A (en) * 2006-04-19 2007-11-01 Hitachi Kokusai Electric Inc Method for manufacturing semiconductor device
JP2014156644A (en) * 2013-02-18 2014-08-28 Jfe Steel Corp Nitriding treatment facility for grain-oriented electromagnetic steel sheet, and nitriding treatment method

Also Published As

Publication number Publication date
JPS6356311B2 (en) 1988-11-08

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