JPS57101671A - Plasma etching apparatus - Google Patents

Plasma etching apparatus

Info

Publication number
JPS57101671A
JPS57101671A JP17852080A JP17852080A JPS57101671A JP S57101671 A JPS57101671 A JP S57101671A JP 17852080 A JP17852080 A JP 17852080A JP 17852080 A JP17852080 A JP 17852080A JP S57101671 A JPS57101671 A JP S57101671A
Authority
JP
Japan
Prior art keywords
treating chamber
chamber
treating
wall
etching apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17852080A
Other languages
Japanese (ja)
Inventor
Yasuhiro Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KIYUUSHIYUU NIPPON DENKI KK
NEC Kyushu Ltd
Original Assignee
KIYUUSHIYUU NIPPON DENKI KK
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KIYUUSHIYUU NIPPON DENKI KK, NEC Kyushu Ltd filed Critical KIYUUSHIYUU NIPPON DENKI KK
Priority to JP17852080A priority Critical patent/JPS57101671A/en
Publication of JPS57101671A publication Critical patent/JPS57101671A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To enable to prevent consumption of a treating chamber, in a plasma etching apparatus, by providing a cylinder comprising a metal or an insulation material between the treating chamber and an internal electrode.
CONSTITUTION: A semiconductor substrate plate 2 finishing photoresist patterning is placed on a table 3 being warmed to a predetermined temp in a treating chamber by a conveyor belt 1. After a reaction chamber is hermetically sealed and exhausted, a treating gas is introduced into said reaction chamber. Subsequently, high frequency is applied to an external electrode 4 to generate a plasma gas to carry out etching. In this case, because an inner wall of the treating chamber is etched, between the inner wall of the treating chamber and an internal electrode 5, a cylinder 6 made of quartz is provided so as to be closely contacted with the inner wall of said treating chamber. Thereby, the life of the treating chamber can be held for a long period of time.
COPYRIGHT: (C)1982,JPO&Japio
JP17852080A 1980-12-17 1980-12-17 Plasma etching apparatus Pending JPS57101671A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17852080A JPS57101671A (en) 1980-12-17 1980-12-17 Plasma etching apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17852080A JPS57101671A (en) 1980-12-17 1980-12-17 Plasma etching apparatus

Publications (1)

Publication Number Publication Date
JPS57101671A true JPS57101671A (en) 1982-06-24

Family

ID=16049906

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17852080A Pending JPS57101671A (en) 1980-12-17 1980-12-17 Plasma etching apparatus

Country Status (1)

Country Link
JP (1) JPS57101671A (en)

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