JPS57101671A - Plasma etching apparatus - Google Patents
Plasma etching apparatusInfo
- Publication number
- JPS57101671A JPS57101671A JP17852080A JP17852080A JPS57101671A JP S57101671 A JPS57101671 A JP S57101671A JP 17852080 A JP17852080 A JP 17852080A JP 17852080 A JP17852080 A JP 17852080A JP S57101671 A JPS57101671 A JP S57101671A
- Authority
- JP
- Japan
- Prior art keywords
- treating chamber
- chamber
- treating
- wall
- etching apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To enable to prevent consumption of a treating chamber, in a plasma etching apparatus, by providing a cylinder comprising a metal or an insulation material between the treating chamber and an internal electrode.
CONSTITUTION: A semiconductor substrate plate 2 finishing photoresist patterning is placed on a table 3 being warmed to a predetermined temp in a treating chamber by a conveyor belt 1. After a reaction chamber is hermetically sealed and exhausted, a treating gas is introduced into said reaction chamber. Subsequently, high frequency is applied to an external electrode 4 to generate a plasma gas to carry out etching. In this case, because an inner wall of the treating chamber is etched, between the inner wall of the treating chamber and an internal electrode 5, a cylinder 6 made of quartz is provided so as to be closely contacted with the inner wall of said treating chamber. Thereby, the life of the treating chamber can be held for a long period of time.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17852080A JPS57101671A (en) | 1980-12-17 | 1980-12-17 | Plasma etching apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17852080A JPS57101671A (en) | 1980-12-17 | 1980-12-17 | Plasma etching apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57101671A true JPS57101671A (en) | 1982-06-24 |
Family
ID=16049906
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17852080A Pending JPS57101671A (en) | 1980-12-17 | 1980-12-17 | Plasma etching apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57101671A (en) |
-
1980
- 1980-12-17 JP JP17852080A patent/JPS57101671A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5747876A (en) | Plasma etching apparatus and method | |
ATE45836T1 (en) | MATERIALS AND PROCESSES FOR PLASMA ETCHING OXIDES AND NITRIDES OF SILICON. | |
JPS5329076A (en) | Plasma treating apparatus of semiconductor substrates | |
JPS5684476A (en) | Etching method of gas plasma | |
JPS56123377A (en) | Plasma cleaning and etching method | |
JPS57101671A (en) | Plasma etching apparatus | |
JPS5647572A (en) | Etching method of indium oxide film | |
JPS5298475A (en) | Plasma treating apparatus | |
JPS54125143A (en) | Treating device using hydrogen fluoride-containing gas | |
JPS5587435A (en) | Method of producing semiconductor device | |
JPS572585A (en) | Forming method for aluminum electrode | |
JPS5767009A (en) | Formation of film | |
JPS5477573A (en) | Operating method of plasma treating apparatus | |
JPS5621330A (en) | Method of dry etching | |
JPS5732637A (en) | Dry etching apparatus | |
JPS5669382A (en) | Surface treatment by plasma | |
GB1509135A (en) | Gas plasma vapour etching device and method | |
JPS6428925A (en) | Formation of insulating film | |
JPS52127770A (en) | Spatter etching method | |
JPS5338263A (en) | Plasma treating apparatus of semiconductors | |
JPS542670A (en) | Plasma etching method | |
JPS5477574A (en) | Plasma treating apparatus | |
JPS57121234A (en) | Plasma processing and device thereof | |
JPS5776188A (en) | Gas plasma etching device | |
JPS5384684A (en) | Plasma etching device |