DE68917870D1 - Vorrichtung und Verfahren zur chemischen Gasphasenabscheidung. - Google Patents

Vorrichtung und Verfahren zur chemischen Gasphasenabscheidung.

Info

Publication number
DE68917870D1
DE68917870D1 DE68917870T DE68917870T DE68917870D1 DE 68917870 D1 DE68917870 D1 DE 68917870D1 DE 68917870 T DE68917870 T DE 68917870T DE 68917870 T DE68917870 T DE 68917870T DE 68917870 D1 DE68917870 D1 DE 68917870D1
Authority
DE
Germany
Prior art keywords
vapor deposition
chemical vapor
chemical
deposition
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68917870T
Other languages
English (en)
Other versions
DE68917870T2 (de
Inventor
Takafumi Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE68917870D1 publication Critical patent/DE68917870D1/de
Application granted granted Critical
Publication of DE68917870T2 publication Critical patent/DE68917870T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/408—Oxides of copper or solid solutions thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
DE68917870T 1988-11-30 1989-11-30 Vorrichtung und Verfahren zur chemischen Gasphasenabscheidung. Expired - Fee Related DE68917870T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63305264A JPH02150040A (ja) 1988-11-30 1988-11-30 気相成長装置

Publications (2)

Publication Number Publication Date
DE68917870D1 true DE68917870D1 (de) 1994-10-06
DE68917870T2 DE68917870T2 (de) 1995-01-05

Family

ID=17943009

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68917870T Expired - Fee Related DE68917870T2 (de) 1988-11-30 1989-11-30 Vorrichtung und Verfahren zur chemischen Gasphasenabscheidung.

Country Status (4)

Country Link
US (1) US5183510A (de)
EP (1) EP0371796B1 (de)
JP (1) JPH02150040A (de)
DE (1) DE68917870T2 (de)

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* Cited by examiner, † Cited by third party
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DE4006489A1 (de) * 1990-03-02 1991-09-05 Hoechst Ag Vorrichtung zum herstellen duenner schichten aus metallmischoxiden aus organischen metallverbindungen auf einem substrat
JPH0766919B2 (ja) * 1991-02-20 1995-07-19 株式会社半導体プロセス研究所 半導体製造装置
JP3131005B2 (ja) * 1992-03-06 2001-01-31 パイオニア株式会社 化合物半導体気相成長装置
US5369978A (en) * 1992-12-09 1994-12-06 International Flavors & Fragrances Inc. Aroma emission analysis system using a multiplicity of individual enclosures
US5500249A (en) * 1992-12-22 1996-03-19 Applied Materials, Inc. Uniform tungsten silicide films produced by chemical vapor deposition
US5558910A (en) * 1992-12-22 1996-09-24 Applied Materials, Inc. Uniform tungsten silicide films produced by chemical vapor deposition
KR960015375B1 (ko) * 1994-06-08 1996-11-11 현대전자산업 주식회사 강유전체 박막 제조장치 및 그를 사용한 강유전체 박막 제조방법
FI100409B (fi) * 1994-11-28 1997-11-28 Asm Int Menetelmä ja laitteisto ohutkalvojen valmistamiseksi
FI97731C (fi) * 1994-11-28 1997-02-10 Mikrokemia Oy Menetelmä ja laite ohutkalvojen valmistamiseksi
FI97730C (fi) * 1994-11-28 1997-02-10 Mikrokemia Oy Laitteisto ohutkalvojen valmistamiseksi
EP0785574A3 (de) 1996-01-16 1998-07-29 Applied Materials, Inc. Herstellungsverfahren von Wolfram-Silizid
US6051276A (en) * 1997-03-14 2000-04-18 Alpha Metals, Inc. Internally heated pyrolysis zone
US6051287A (en) * 1997-06-20 2000-04-18 Micron Technology, Inc. Laser desorption of CVD precursor species
US6943392B2 (en) * 1999-08-30 2005-09-13 Micron Technology, Inc. Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen
US6558517B2 (en) * 2000-05-26 2003-05-06 Micron Technology, Inc. Physical vapor deposition methods
US6610352B2 (en) * 2000-12-22 2003-08-26 Ifire Technology, Inc. Multiple source deposition process
US20030017266A1 (en) * 2001-07-13 2003-01-23 Cem Basceri Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer
US6838122B2 (en) * 2001-07-13 2005-01-04 Micron Technology, Inc. Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers
US6676760B2 (en) 2001-08-16 2004-01-13 Appiled Materials, Inc. Process chamber having multiple gas distributors and method
US7011978B2 (en) 2001-08-17 2006-03-14 Micron Technology, Inc. Methods of forming capacitor constructions comprising perovskite-type dielectric materials with different amount of crystallinity regions
US7939129B2 (en) * 2004-01-26 2011-05-10 Pilington North America, Inc. Deposition of iron oxide coatings on a glass substrate
US9260780B2 (en) * 2004-03-26 2016-02-16 Tohoku Seiki Industries, Ltd. Process for forming thin film and system for forming thin film
ATE444380T1 (de) * 2004-06-28 2009-10-15 Cambridge Nanotech Inc Atomlagenabscheidungssystem und -verfahren
US20060185590A1 (en) * 2005-02-18 2006-08-24 General Electric Company High temperature chemical vapor deposition apparatus
US20060185591A1 (en) * 2005-02-18 2006-08-24 General Electric Company High temperature chemical vapor deposition apparatus
KR101501426B1 (ko) * 2006-06-02 2015-03-11 어플라이드 머티어리얼스, 인코포레이티드 차압 측정들에 의한 가스 유동 제어
US8067061B2 (en) 2007-10-25 2011-11-29 Asm America, Inc. Reaction apparatus having multiple adjustable exhaust ports
DE102009049839B4 (de) * 2009-10-16 2012-12-06 Calyxo Gmbh Gasverdampfer für Beschichtungsanlagen sowie Verfahren zu dessen Betreiben
JP2014065089A (ja) * 2012-09-24 2014-04-17 Aisin Ai Co Ltd 切り粉破砕装置、切り粉破砕刃、並びに前記切り粉破砕装置における切り粉破砕データ収集方法
CN111816586A (zh) * 2020-05-18 2020-10-23 中国科学院微电子研究所 一种用于半导体制造的气体混合设备及混合方法
CN114892270A (zh) * 2022-04-07 2022-08-12 西安电子科技大学 一种具有冷壁分时分步输运功能的多雾化源Mist-CVD设备

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3517643A (en) * 1968-11-25 1970-06-30 Sylvania Electric Prod Vapor deposition apparatus including diffuser means
GB1392514A (en) * 1972-07-18 1975-04-30 Plessey Co Ltd Thin film deposition of rare earth garnets
US4389973A (en) * 1980-03-18 1983-06-28 Oy Lohja Ab Apparatus for performing growth of compound thin films
DE3168017D1 (en) * 1980-05-27 1985-02-14 Secr Defence Brit Manufacture of cadmium mercury telluride
JPH07101751B2 (ja) * 1985-03-28 1995-11-01 キヤノン株式会社 光起電力素子の製造方法
JPS6217099A (ja) * 1985-07-16 1987-01-26 Kokusai Denshin Denwa Co Ltd <Kdd> ビスマス含有酸化物単結晶の製造方法
US4945857A (en) * 1986-03-14 1990-08-07 International Business Machines Corporation Plasma formation of hydride compounds
JPS6358919A (ja) * 1986-08-29 1988-03-14 Fujitsu Ltd 分子線エピタキシヤル成長装置
US4911102A (en) * 1987-01-31 1990-03-27 Toyoda Gosei Co., Ltd. Process of vapor growth of gallium nitride and its apparatus
JPS63225528A (ja) * 1987-03-13 1988-09-20 Toa Nenryo Kogyo Kk 超伝導性複合酸化物の製造方法
JPH01212220A (ja) * 1987-10-09 1989-08-25 Fujitsu Ltd 超伝導材料の気相成長方法
WO1989007666A1 (en) * 1988-02-19 1989-08-24 Northwestern University Method of forming superconducting materials

Also Published As

Publication number Publication date
EP0371796A3 (de) 1991-02-06
US5183510A (en) 1993-02-02
EP0371796B1 (de) 1994-08-31
DE68917870T2 (de) 1995-01-05
JPH02150040A (ja) 1990-06-08
EP0371796A2 (de) 1990-06-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee