GB1392514A - Thin film deposition of rare earth garnets - Google Patents

Thin film deposition of rare earth garnets

Info

Publication number
GB1392514A
GB1392514A GB3364372A GB3364372A GB1392514A GB 1392514 A GB1392514 A GB 1392514A GB 3364372 A GB3364372 A GB 3364372A GB 3364372 A GB3364372 A GB 3364372A GB 1392514 A GB1392514 A GB 1392514A
Authority
GB
United Kingdom
Prior art keywords
constituents
chlorides
garnet
deposition
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3364372A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Co Ltd
Original Assignee
Plessey Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Co Ltd filed Critical Plessey Co Ltd
Priority to GB3364372A priority Critical patent/GB1392514A/en
Publication of GB1392514A publication Critical patent/GB1392514A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/22—Heat treatment; Thermal decomposition; Chemical vapour deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Magnetic Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1392514 Deposition of rare-earth garnets PLESSEY CO Ltd 25 May 1973 [18 July 1972] 33643/72 Heading C1A A method of making a rare-earth magnetic garnet by deposition of constituents of the garnet on to a substrate from a gaseous mixture of the chlorides of the constituents comprises an initial stage in which the chlorides of all the constituents are prepared from the constituents by heating the constituents in an inert atmosphere to a temperature at which the chlorides occupy the gaseous state and by passing chlorine over each of the heated constituents individually, whereby the chlorides are formed in individually adjustable quantities and are used immediately after formation; a mixing stage in which the gaseous chlorides are mixed in the inert atmosphere, and a deposition stage in which the constituents of the garnet in the presence of oxygen are deposited on the substrate. Exemplified is a process and apparatus for making an yttrium, iron, gallium containing garnet.
GB3364372A 1972-07-18 1972-07-18 Thin film deposition of rare earth garnets Expired GB1392514A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB3364372A GB1392514A (en) 1972-07-18 1972-07-18 Thin film deposition of rare earth garnets

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3364372A GB1392514A (en) 1972-07-18 1972-07-18 Thin film deposition of rare earth garnets

Publications (1)

Publication Number Publication Date
GB1392514A true GB1392514A (en) 1975-04-30

Family

ID=10355577

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3364372A Expired GB1392514A (en) 1972-07-18 1972-07-18 Thin film deposition of rare earth garnets

Country Status (1)

Country Link
GB (1) GB1392514A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4565157A (en) * 1983-03-29 1986-01-21 Genus, Inc. Method and apparatus for deposition of tungsten silicides
EP0371796A2 (en) * 1988-11-30 1990-06-06 Fujitsu Limited Apparatus and process for chemical vapor deposition

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4565157A (en) * 1983-03-29 1986-01-21 Genus, Inc. Method and apparatus for deposition of tungsten silicides
EP0371796A2 (en) * 1988-11-30 1990-06-06 Fujitsu Limited Apparatus and process for chemical vapor deposition
EP0371796A3 (en) * 1988-11-30 1991-02-06 Fujitsu Limited Apparatus and process for chemical vapor deposition
US5183510A (en) * 1988-11-30 1993-02-02 Fujitsu Limited Apparatus and process for chemical vapor deposition

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee