GB1394290A - Method for the growth of synthetic garnet - Google Patents

Method for the growth of synthetic garnet

Info

Publication number
GB1394290A
GB1394290A GB3838172A GB3838172A GB1394290A GB 1394290 A GB1394290 A GB 1394290A GB 3838172 A GB3838172 A GB 3838172A GB 3838172 A GB3838172 A GB 3838172A GB 1394290 A GB1394290 A GB 1394290A
Authority
GB
United Kingdom
Prior art keywords
growth
oxygen
garnet
partial pressure
synthetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3838172A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1394290A publication Critical patent/GB1394290A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/24—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids
    • H01F41/28—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids by liquid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Soft Magnetic Materials (AREA)

Abstract

1394290 Preparation of synthetic gallium garnet WESTERN ELECTRIC CO Inc 17 Aug 1972 [18 Aug 1971] 38381/72 Heading C1A [Also in Division B1] Synthetic garnet of the general formula A 2 B 2 B<SP>1</SP> 3 O 12 , where A is at least one rare earth element with atomic number 62-71, B is Ga and/or Sc, B<SP>1</SP> is Ga and O is oxygen and wherein each of the components of the garnet may comprise any excess beyond stoichiometry of up to 7 % by wt., is prepared by exposing a melt of the above components to an oxygen containing atmosphere having a partial pressure of 3À8- 19À4 mm. of Hg for 1-10 hours and subsequently effecting growth of a single crystal by crystal pulling while maintaining the same partial pressure of oxygen. Growth in the described manner has been found to result in the total elimination of dislocations in the single crystal grown. The growth of dislocation free gadolinium gallium garnet and Gd 3 Sc 2 Ga 3 O 12 is exemplified at a preferred partial pressure of oxygen of 15À2 mm. of Hg.
GB3838172A 1971-08-18 1972-08-17 Method for the growth of synthetic garnet Expired GB1394290A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17275171A 1971-08-18 1971-08-18

Publications (1)

Publication Number Publication Date
GB1394290A true GB1394290A (en) 1975-05-14

Family

ID=22629067

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3838172A Expired GB1394290A (en) 1971-08-18 1972-08-17 Method for the growth of synthetic garnet

Country Status (10)

Country Link
US (1) US3723599A (en)
JP (1) JPS5246198B2 (en)
BE (1) BE787642A (en)
CA (1) CA954776A (en)
DE (1) DE2240044C3 (en)
FR (1) FR2149518B1 (en)
GB (1) GB1394290A (en)
IT (1) IT964946B (en)
NL (1) NL146403B (en)
SE (1) SE385437B (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS529438B2 (en) * 1973-01-16 1977-03-16
US4187139A (en) * 1973-02-14 1980-02-05 U.S. Philips Corporation Growth of single crystal bismuth silicon oxide
JPS5611679B2 (en) * 1973-03-14 1981-03-16
US4040890A (en) * 1975-06-27 1977-08-09 Bell Telephone Laboratories, Incorporated Neodymium oxide doped yttrium aluminum garnet optical fiber
NL7606482A (en) * 1976-06-16 1977-12-20 Philips Nv EenKRISTZL OF CALCIUM-GALLIUM-GERMANIUM GRAINATE, AND SUBSTRATE MANUFACTURED FROM SUCH EenKRISTZL WITH AN EPITAXIALLY GROWN BELDO-MEINFILM.
US4199396A (en) * 1976-06-24 1980-04-22 Union Carbide Corporation Method for producing single crystal gadolinium gallium garnet
US4302280A (en) * 1978-11-14 1981-11-24 Texas Instruments Incorporated Growing gadolinium gallium garnet with calcium ions
US4315832A (en) * 1979-03-05 1982-02-16 Hughes Aircraft Company Process for increasing laser crystal fluorescence yield by controlled atmosphere processing
GB2047113B (en) * 1979-04-12 1983-08-03 Union Carbide Corp Method for producing gadolinium gallium garnet
FR2469478A1 (en) * 1979-11-09 1981-05-22 Rhone Poulenc Ind PROCESS FOR THE MANUFACTURE OF POLYCRYSTALLINE GRENATE COMPRISING ALUMINUM AND / OR GALLIUM AND / OR INDIUM AND AT LEAST ONE ELEMENT TAKEN IN THE GROUP CONSISTING OF RARE EARTHS AND YTTRIUM, CORRESPONDING SINGLE CRYSTALS
FR2469477A1 (en) * 1979-11-09 1981-05-22 Rhone Poulenc Ind PROCESS FOR THE MANUFACTURE OF POLYCRYSTALLINE GRENATE, POLYCRYSTALLINE GRENATE AND CORRESPONDING MONOCRYSTAL
JPS5988398A (en) * 1982-11-08 1984-05-22 Shin Etsu Chem Co Ltd Manufacture of gallium-garnet single crystal
US5691279A (en) * 1993-06-22 1997-11-25 The United States Of America As Represented By The Secretary Of The Army C-axis oriented high temperature superconductors deposited onto new compositions of garnet
WO2004073024A2 (en) * 2003-02-06 2004-08-26 Brown University Method and apparatus for making continuous films ofa single crystal material

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3272591A (en) * 1959-05-08 1966-09-13 Union Carbide Corp Production of single crystals from incongruently melting material
US3079240A (en) * 1960-05-13 1963-02-26 Bell Telephone Labor Inc Process of growing single crystals

Also Published As

Publication number Publication date
SE385437B (en) 1976-07-05
DE2240044A1 (en) 1973-03-01
IT964946B (en) 1974-01-31
DE2240044C3 (en) 1975-01-02
DE2240044B2 (en) 1974-05-09
CA954776A (en) 1974-09-17
US3723599A (en) 1973-03-27
BE787642A (en) 1972-12-18
NL7208408A (en) 1973-02-20
NL146403B (en) 1975-07-15
FR2149518B1 (en) 1975-09-12
JPS4831200A (en) 1973-04-24
FR2149518A1 (en) 1973-03-30
JPS5246198B2 (en) 1977-11-22

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee