CA954776A - Technique for growth of single crystal gallium garnet - Google Patents

Technique for growth of single crystal gallium garnet

Info

Publication number
CA954776A
CA954776A CA136,316A CA136316A CA954776A CA 954776 A CA954776 A CA 954776A CA 136316 A CA136316 A CA 136316A CA 954776 A CA954776 A CA 954776A
Authority
CA
Canada
Prior art keywords
growth
technique
single crystal
gallium garnet
crystal gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA136,316A
Other versions
CA136316S (en
Inventor
Charles D. Brandle (Jr.)
David C. Miller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of CA954776A publication Critical patent/CA954776A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/24—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids
    • H01F41/28—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids by liquid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Soft Magnetic Materials (AREA)
CA136,316A 1971-08-18 1973-03-06 Technique for growth of single crystal gallium garnet Expired CA954776A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17275171A 1971-08-18 1971-08-18

Publications (1)

Publication Number Publication Date
CA954776A true CA954776A (en) 1974-09-17

Family

ID=22629067

Family Applications (1)

Application Number Title Priority Date Filing Date
CA136,316A Expired CA954776A (en) 1971-08-18 1973-03-06 Technique for growth of single crystal gallium garnet

Country Status (10)

Country Link
US (1) US3723599A (en)
JP (1) JPS5246198B2 (en)
BE (1) BE787642A (en)
CA (1) CA954776A (en)
DE (1) DE2240044C3 (en)
FR (1) FR2149518B1 (en)
GB (1) GB1394290A (en)
IT (1) IT964946B (en)
NL (1) NL146403B (en)
SE (1) SE385437B (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS529438B2 (en) * 1973-01-16 1977-03-16
US4187139A (en) * 1973-02-14 1980-02-05 U.S. Philips Corporation Growth of single crystal bismuth silicon oxide
JPS5611679B2 (en) * 1973-03-14 1981-03-16
US4040890A (en) * 1975-06-27 1977-08-09 Bell Telephone Laboratories, Incorporated Neodymium oxide doped yttrium aluminum garnet optical fiber
NL7606482A (en) * 1976-06-16 1977-12-20 Philips Nv EenKRISTZL OF CALCIUM-GALLIUM-GERMANIUM GRAINATE, AND SUBSTRATE MANUFACTURED FROM SUCH EenKRISTZL WITH AN EPITAXIALLY GROWN BELDO-MEINFILM.
US4199396A (en) * 1976-06-24 1980-04-22 Union Carbide Corporation Method for producing single crystal gadolinium gallium garnet
US4302280A (en) * 1978-11-14 1981-11-24 Texas Instruments Incorporated Growing gadolinium gallium garnet with calcium ions
US4315832A (en) * 1979-03-05 1982-02-16 Hughes Aircraft Company Process for increasing laser crystal fluorescence yield by controlled atmosphere processing
GB2047113B (en) * 1979-04-12 1983-08-03 Union Carbide Corp Method for producing gadolinium gallium garnet
FR2469478A1 (en) * 1979-11-09 1981-05-22 Rhone Poulenc Ind PROCESS FOR THE MANUFACTURE OF POLYCRYSTALLINE GRENATE COMPRISING ALUMINUM AND / OR GALLIUM AND / OR INDIUM AND AT LEAST ONE ELEMENT TAKEN IN THE GROUP CONSISTING OF RARE EARTHS AND YTTRIUM, CORRESPONDING SINGLE CRYSTALS
FR2469477A1 (en) * 1979-11-09 1981-05-22 Rhone Poulenc Ind PROCESS FOR THE MANUFACTURE OF POLYCRYSTALLINE GRENATE, POLYCRYSTALLINE GRENATE AND CORRESPONDING MONOCRYSTAL
JPS5988398A (en) * 1982-11-08 1984-05-22 Shin Etsu Chem Co Ltd Manufacture of gallium-garnet single crystal
US5691279A (en) * 1993-06-22 1997-11-25 The United States Of America As Represented By The Secretary Of The Army C-axis oriented high temperature superconductors deposited onto new compositions of garnet
WO2004073024A2 (en) * 2003-02-06 2004-08-26 Brown University Method and apparatus for making continuous films ofa single crystal material

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3272591A (en) * 1959-05-08 1966-09-13 Union Carbide Corp Production of single crystals from incongruently melting material
US3079240A (en) * 1960-05-13 1963-02-26 Bell Telephone Labor Inc Process of growing single crystals

Also Published As

Publication number Publication date
DE2240044B2 (en) 1974-05-09
FR2149518A1 (en) 1973-03-30
IT964946B (en) 1974-01-31
JPS4831200A (en) 1973-04-24
SE385437B (en) 1976-07-05
DE2240044C3 (en) 1975-01-02
JPS5246198B2 (en) 1977-11-22
NL146403B (en) 1975-07-15
BE787642A (en) 1972-12-18
FR2149518B1 (en) 1975-09-12
US3723599A (en) 1973-03-27
NL7208408A (en) 1973-02-20
GB1394290A (en) 1975-05-14
DE2240044A1 (en) 1973-03-01

Similar Documents

Publication Publication Date Title
CA963138A (en) Transformation of liquid crystals
CA954776A (en) Technique for growth of single crystal gallium garnet
CH613384A5 (en) Single crystal on the basis of gallium garnet
CA947186A (en) Method for the solution growth of more perfect semiconductor crystals
CA969324A (en) Crystal modification of inorganic salts
CA934273A (en) Method for growth of a mixed crystal with controlled composition
CA997255A (en) Apparatus for growing single crystals
CA941716A (en) Technique for the growth of single crystal lead molybdate
CA969374A (en) Separation of gallium
CA729096A (en) Method of growing crystals
CA783535A (en) Method of epitaxial crystal growth
CA860284A (en) Control of epitaxial growth on polar monocrystalline substrates
CA954774A (en) Magnetic devices utilizing garnet epitaxial materials and method of production
CA968260A (en) Method of manufacturing diamond crystals
CA862699A (en) Vapor-liquid-solid crystal growth technique
CA940804A (en) Crystal growth
CA795749A (en) Method of growing single crystals
CA845081A (en) Method of growing strain-free single crystals
AU430580B2 (en) Method of growing crystals
CA873832A (en) Method for growing single crystals from solution
CA783021A (en) Method of growing oxide crystals
CA860283A (en) Crystal growing
CA791087A (en) Method for growth of synthetic garnet
AU5329669A (en) Method of growing crystals
CA791086A (en) Processes for epitaxial crystal growth