SE385437B - WAY TO GROW SYNTHETIC GRANTS - Google Patents

WAY TO GROW SYNTHETIC GRANTS

Info

Publication number
SE385437B
SE385437B SE7210127A SE1012772A SE385437B SE 385437 B SE385437 B SE 385437B SE 7210127 A SE7210127 A SE 7210127A SE 1012772 A SE1012772 A SE 1012772A SE 385437 B SE385437 B SE 385437B
Authority
SE
Sweden
Prior art keywords
grants
way
grow
synthetic
grow synthetic
Prior art date
Application number
SE7210127A
Other languages
Swedish (sv)
Inventor
Jr C D Brandle
D C Miller
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of SE385437B publication Critical patent/SE385437B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/24—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids
    • H01F41/28—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids by liquid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
SE7210127A 1971-08-18 1972-08-03 WAY TO GROW SYNTHETIC GRANTS SE385437B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17275171A 1971-08-18 1971-08-18

Publications (1)

Publication Number Publication Date
SE385437B true SE385437B (en) 1976-07-05

Family

ID=22629067

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7210127A SE385437B (en) 1971-08-18 1972-08-03 WAY TO GROW SYNTHETIC GRANTS

Country Status (10)

Country Link
US (1) US3723599A (en)
JP (1) JPS5246198B2 (en)
BE (1) BE787642A (en)
CA (1) CA954776A (en)
DE (1) DE2240044C3 (en)
FR (1) FR2149518B1 (en)
GB (1) GB1394290A (en)
IT (1) IT964946B (en)
NL (1) NL146403B (en)
SE (1) SE385437B (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS529438B2 (en) * 1973-01-16 1977-03-16
US4187139A (en) * 1973-02-14 1980-02-05 U.S. Philips Corporation Growth of single crystal bismuth silicon oxide
JPS5611679B2 (en) * 1973-03-14 1981-03-16
US4040890A (en) * 1975-06-27 1977-08-09 Bell Telephone Laboratories, Incorporated Neodymium oxide doped yttrium aluminum garnet optical fiber
NL7606482A (en) * 1976-06-16 1977-12-20 Philips Nv EenKRISTZL OF CALCIUM-GALLIUM-GERMANIUM GRAINATE, AND SUBSTRATE MANUFACTURED FROM SUCH EenKRISTZL WITH AN EPITAXIALLY GROWN BELDO-MEINFILM.
US4199396A (en) * 1976-06-24 1980-04-22 Union Carbide Corporation Method for producing single crystal gadolinium gallium garnet
US4302280A (en) * 1978-11-14 1981-11-24 Texas Instruments Incorporated Growing gadolinium gallium garnet with calcium ions
US4315832A (en) * 1979-03-05 1982-02-16 Hughes Aircraft Company Process for increasing laser crystal fluorescence yield by controlled atmosphere processing
GB2047113B (en) * 1979-04-12 1983-08-03 Union Carbide Corp Method for producing gadolinium gallium garnet
FR2469477A1 (en) * 1979-11-09 1981-05-22 Rhone Poulenc Ind PROCESS FOR THE MANUFACTURE OF POLYCRYSTALLINE GRENATE, POLYCRYSTALLINE GRENATE AND CORRESPONDING MONOCRYSTAL
FR2469478A1 (en) * 1979-11-09 1981-05-22 Rhone Poulenc Ind PROCESS FOR THE MANUFACTURE OF POLYCRYSTALLINE GRENATE COMPRISING ALUMINUM AND / OR GALLIUM AND / OR INDIUM AND AT LEAST ONE ELEMENT TAKEN IN THE GROUP CONSISTING OF RARE EARTHS AND YTTRIUM, CORRESPONDING SINGLE CRYSTALS
JPS5988398A (en) * 1982-11-08 1984-05-22 Shin Etsu Chem Co Ltd Manufacture of gallium-garnet single crystal
US5691279A (en) * 1993-06-22 1997-11-25 The United States Of America As Represented By The Secretary Of The Army C-axis oriented high temperature superconductors deposited onto new compositions of garnet
US20060073978A1 (en) * 2003-02-06 2006-04-06 Brown University Method and apparatus for making continuous films of a single crystal material

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3272591A (en) * 1959-05-08 1966-09-13 Union Carbide Corp Production of single crystals from incongruently melting material
US3079240A (en) * 1960-05-13 1963-02-26 Bell Telephone Labor Inc Process of growing single crystals

Also Published As

Publication number Publication date
JPS4831200A (en) 1973-04-24
DE2240044A1 (en) 1973-03-01
NL7208408A (en) 1973-02-20
DE2240044C3 (en) 1975-01-02
US3723599A (en) 1973-03-27
FR2149518B1 (en) 1975-09-12
BE787642A (en) 1972-12-18
JPS5246198B2 (en) 1977-11-22
NL146403B (en) 1975-07-15
CA954776A (en) 1974-09-17
IT964946B (en) 1974-01-31
GB1394290A (en) 1975-05-14
FR2149518A1 (en) 1973-03-30
DE2240044B2 (en) 1974-05-09

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