JPS4831200A - - Google Patents

Info

Publication number
JPS4831200A
JPS4831200A JP47081520A JP8152072A JPS4831200A JP S4831200 A JPS4831200 A JP S4831200A JP 47081520 A JP47081520 A JP 47081520A JP 8152072 A JP8152072 A JP 8152072A JP S4831200 A JPS4831200 A JP S4831200A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP47081520A
Other languages
Japanese (ja)
Other versions
JPS5246198B2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4831200A publication Critical patent/JPS4831200A/ja
Publication of JPS5246198B2 publication Critical patent/JPS5246198B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/24—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids
    • H01F41/28—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids by liquid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Soft Magnetic Materials (AREA)
JP47081520A 1971-08-18 1972-08-16 Expired JPS5246198B2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17275171A 1971-08-18 1971-08-18

Publications (2)

Publication Number Publication Date
JPS4831200A true JPS4831200A (en) 1973-04-24
JPS5246198B2 JPS5246198B2 (en) 1977-11-22

Family

ID=22629067

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47081520A Expired JPS5246198B2 (en) 1971-08-18 1972-08-16

Country Status (10)

Country Link
US (1) US3723599A (en)
JP (1) JPS5246198B2 (en)
BE (1) BE787642A (en)
CA (1) CA954776A (en)
DE (1) DE2240044C3 (en)
FR (1) FR2149518B1 (en)
GB (1) GB1394290A (en)
IT (1) IT964946B (en)
NL (1) NL146403B (en)
SE (1) SE385437B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49117400A (en) * 1973-03-14 1974-11-09

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS529438B2 (en) * 1973-01-16 1977-03-16
US4187139A (en) * 1973-02-14 1980-02-05 U.S. Philips Corporation Growth of single crystal bismuth silicon oxide
US4040890A (en) * 1975-06-27 1977-08-09 Bell Telephone Laboratories, Incorporated Neodymium oxide doped yttrium aluminum garnet optical fiber
NL7606482A (en) * 1976-06-16 1977-12-20 Philips Nv EenKRISTZL OF CALCIUM-GALLIUM-GERMANIUM GRAINATE, AND SUBSTRATE MANUFACTURED FROM SUCH EenKRISTZL WITH AN EPITAXIALLY GROWN BELDO-MEINFILM.
US4199396A (en) * 1976-06-24 1980-04-22 Union Carbide Corporation Method for producing single crystal gadolinium gallium garnet
US4302280A (en) * 1978-11-14 1981-11-24 Texas Instruments Incorporated Growing gadolinium gallium garnet with calcium ions
US4315832A (en) * 1979-03-05 1982-02-16 Hughes Aircraft Company Process for increasing laser crystal fluorescence yield by controlled atmosphere processing
GB2047113B (en) * 1979-04-12 1983-08-03 Union Carbide Corp Method for producing gadolinium gallium garnet
FR2469478A1 (en) * 1979-11-09 1981-05-22 Rhone Poulenc Ind PROCESS FOR THE MANUFACTURE OF POLYCRYSTALLINE GRENATE COMPRISING ALUMINUM AND / OR GALLIUM AND / OR INDIUM AND AT LEAST ONE ELEMENT TAKEN IN THE GROUP CONSISTING OF RARE EARTHS AND YTTRIUM, CORRESPONDING SINGLE CRYSTALS
FR2469477A1 (en) * 1979-11-09 1981-05-22 Rhone Poulenc Ind PROCESS FOR THE MANUFACTURE OF POLYCRYSTALLINE GRENATE, POLYCRYSTALLINE GRENATE AND CORRESPONDING MONOCRYSTAL
JPS5988398A (en) * 1982-11-08 1984-05-22 Shin Etsu Chem Co Ltd Manufacture of gallium-garnet single crystal
US5691279A (en) * 1993-06-22 1997-11-25 The United States Of America As Represented By The Secretary Of The Army C-axis oriented high temperature superconductors deposited onto new compositions of garnet
US20060073978A1 (en) * 2003-02-06 2006-04-06 Brown University Method and apparatus for making continuous films of a single crystal material

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3272591A (en) * 1959-05-08 1966-09-13 Union Carbide Corp Production of single crystals from incongruently melting material
US3079240A (en) * 1960-05-13 1963-02-26 Bell Telephone Labor Inc Process of growing single crystals

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49117400A (en) * 1973-03-14 1974-11-09
JPS5611679B2 (en) * 1973-03-14 1981-03-16

Also Published As

Publication number Publication date
NL146403B (en) 1975-07-15
DE2240044B2 (en) 1974-05-09
BE787642A (en) 1972-12-18
FR2149518B1 (en) 1975-09-12
JPS5246198B2 (en) 1977-11-22
IT964946B (en) 1974-01-31
US3723599A (en) 1973-03-27
DE2240044C3 (en) 1975-01-02
NL7208408A (en) 1973-02-20
CA954776A (en) 1974-09-17
SE385437B (en) 1976-07-05
FR2149518A1 (en) 1973-03-30
GB1394290A (en) 1975-05-14
DE2240044A1 (en) 1973-03-01

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