SE385437B - Sett att odla syntetiska granater - Google Patents
Sett att odla syntetiska granaterInfo
- Publication number
- SE385437B SE385437B SE7210127A SE1012772A SE385437B SE 385437 B SE385437 B SE 385437B SE 7210127 A SE7210127 A SE 7210127A SE 1012772 A SE1012772 A SE 1012772A SE 385437 B SE385437 B SE 385437B
- Authority
- SE
- Sweden
- Prior art keywords
- grants
- way
- grow
- synthetic
- grow synthetic
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/24—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids
- H01F41/28—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids by liquid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Soft Magnetic Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17275171A | 1971-08-18 | 1971-08-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
SE385437B true SE385437B (sv) | 1976-07-05 |
Family
ID=22629067
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7210127A SE385437B (sv) | 1971-08-18 | 1972-08-03 | Sett att odla syntetiska granater |
Country Status (10)
Country | Link |
---|---|
US (1) | US3723599A (sv) |
JP (1) | JPS5246198B2 (sv) |
BE (1) | BE787642A (sv) |
CA (1) | CA954776A (sv) |
DE (1) | DE2240044C3 (sv) |
FR (1) | FR2149518B1 (sv) |
GB (1) | GB1394290A (sv) |
IT (1) | IT964946B (sv) |
NL (1) | NL146403B (sv) |
SE (1) | SE385437B (sv) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS529438B2 (sv) * | 1973-01-16 | 1977-03-16 | ||
US4187139A (en) * | 1973-02-14 | 1980-02-05 | U.S. Philips Corporation | Growth of single crystal bismuth silicon oxide |
JPS5611679B2 (sv) * | 1973-03-14 | 1981-03-16 | ||
US4040890A (en) * | 1975-06-27 | 1977-08-09 | Bell Telephone Laboratories, Incorporated | Neodymium oxide doped yttrium aluminum garnet optical fiber |
NL7606482A (nl) * | 1976-06-16 | 1977-12-20 | Philips Nv | Eenkristzl van calcium-gallium-germanium granaat, alsmede substraat vervaardigd van een dergelijk eenkristzl met een epitaxiaal opgegroeide beldo- meinfilm. |
US4199396A (en) * | 1976-06-24 | 1980-04-22 | Union Carbide Corporation | Method for producing single crystal gadolinium gallium garnet |
US4302280A (en) * | 1978-11-14 | 1981-11-24 | Texas Instruments Incorporated | Growing gadolinium gallium garnet with calcium ions |
US4315832A (en) * | 1979-03-05 | 1982-02-16 | Hughes Aircraft Company | Process for increasing laser crystal fluorescence yield by controlled atmosphere processing |
GB2047113B (en) * | 1979-04-12 | 1983-08-03 | Union Carbide Corp | Method for producing gadolinium gallium garnet |
FR2469477A1 (fr) * | 1979-11-09 | 1981-05-22 | Rhone Poulenc Ind | Procede de fabrication de grenat polycristallin, grenat polycristallin et monocristal correspondant |
FR2469478A1 (fr) * | 1979-11-09 | 1981-05-22 | Rhone Poulenc Ind | Procede de fabrication de grenat polycristallin comportant l'aluminium et/ou le gallium et/ou l'indium et au moins un element pris dans le groupe constitue par les terres rares et l'yttrium, monocristaux correspondants |
JPS5988398A (ja) * | 1982-11-08 | 1984-05-22 | Shin Etsu Chem Co Ltd | ガリウムガ−ネツト単結晶の製造方法 |
US5691279A (en) * | 1993-06-22 | 1997-11-25 | The United States Of America As Represented By The Secretary Of The Army | C-axis oriented high temperature superconductors deposited onto new compositions of garnet |
US20060073978A1 (en) * | 2003-02-06 | 2006-04-06 | Brown University | Method and apparatus for making continuous films of a single crystal material |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3272591A (en) * | 1959-05-08 | 1966-09-13 | Union Carbide Corp | Production of single crystals from incongruently melting material |
US3079240A (en) * | 1960-05-13 | 1963-02-26 | Bell Telephone Labor Inc | Process of growing single crystals |
-
1971
- 1971-08-18 US US00172751A patent/US3723599A/en not_active Expired - Lifetime
-
1972
- 1972-06-20 NL NL727208408A patent/NL146403B/xx not_active IP Right Cessation
- 1972-08-03 SE SE7210127A patent/SE385437B/sv unknown
- 1972-08-16 IT IT69652/72A patent/IT964946B/it active
- 1972-08-16 JP JP47081520A patent/JPS5246198B2/ja not_active Expired
- 1972-08-16 DE DE2240044A patent/DE2240044C3/de not_active Expired
- 1972-08-17 FR FR7229454A patent/FR2149518B1/fr not_active Expired
- 1972-08-17 BE BE787642A patent/BE787642A/xx not_active IP Right Cessation
- 1972-08-17 GB GB3838172A patent/GB1394290A/en not_active Expired
-
1973
- 1973-03-06 CA CA136,316A patent/CA954776A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1394290A (en) | 1975-05-14 |
JPS5246198B2 (sv) | 1977-11-22 |
DE2240044A1 (de) | 1973-03-01 |
FR2149518A1 (sv) | 1973-03-30 |
IT964946B (it) | 1974-01-31 |
DE2240044C3 (de) | 1975-01-02 |
NL7208408A (sv) | 1973-02-20 |
US3723599A (en) | 1973-03-27 |
FR2149518B1 (sv) | 1975-09-12 |
JPS4831200A (sv) | 1973-04-24 |
NL146403B (nl) | 1975-07-15 |
DE2240044B2 (sv) | 1974-05-09 |
CA954776A (en) | 1974-09-17 |
BE787642A (fr) | 1972-12-18 |
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